한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.558-559
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- 2007
오존수를 이용한 실리콘 웨이퍼 연마 후 지용성 왁스 및 오염입자 제거의 영향
Effect of Organic wax residues and particles removal by DIO3 (ozonated DI water) after Silicon Wafer batch Polishing Process
- Yi, Jae-Hwan (Hanyang Univ) ;
- Lee, Seung-Ho (Hanyang Univ) ;
- Kim, Tae-Gon (Hanyang Univ) ;
-
Park, Jin-Goo
(Hanyang Univ)
;
- Lee, Gun-Ho (Siltron Inc.) ;
- Bae, So-Ik (Siltron Inc.)
- 발행 : 2007.06.21
초록
A commercially de-waxer which kinds of solvent after was used to remove a thick organic wax film after polishing process and several steps of SC-1 cleanings were followed for the removal of organic wax residues and particles which requires long process time and high cost of ownership (COO). DIO3 was used to remove organic wax residues too achieve low COO. In this study, 0103 rinsing could use instead of 01 water rinsing. The process time and chemical consumption were reduced by using DIO3.