• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.3
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• pp.53-60
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• 2004

We have developed and manufactured an experimental ultrasonic polishing machine with frequency of 20kHz at the power of vibration 1.7㎾ for effective ultrasonic polishing in processing of high hardness material. Design of the horn is performed by the FEM analysis. The following conclusions were empirically deduced through experimental results to clarify the major elements which affect the surface roughness during the ultrasonic process by following the experimental plans. The ultrasonic polishing machine has been developed in parts of structure part, ultrasonic generator, vibrator. We were able to process the high hardness material without difficulty as a result of ultrasonic polishing by utilizing the groove added step-type horn. Through analyzing by applying the experimental plans, the rotating speed of the horn was determined to be the major factor in influencing the surface roughness. In the case of ceramic, wafer, we were able to obtain good surface roughness when the feed rate and the ultrasonic output were higher. Because the load on slurry particle increases when the ultrasonic output is higher, the processed surface becomes worse in the case of optical glass.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.2 no.1
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• pp.15-21
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• 2003

The ultrasonic polishing machine was developed to get super finishing that consist of machine part that can rotate and travel the main shaft with power 1.5kW, ultrasonic generator with frequency 20kHz. By using this machine we were investigated the characteristics of ultrasonic polishing for three different ceramics, and so could be obtained following results. First, we could be obtained the excellent surface for hard-ta-difficult cutting materials. Second, the effect of surface roughness for the feed rate could be shown that the more the feed rate Increases, the more the value of surface roughness increases. Third, owing to the characteristics being progressed brittle fracture in $Al_2O_3$ polishing with this machine, the value of surface roughness is larger than other ceramics. Forth, because the ultrasonic polishing can be smoother than the existing grinding in discharging the chips, it could be possible to improve the surface roughness about up to 15%.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.2
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• pp.144-151
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• 2012

Polishing is not only one of the most frequently adopted processes in modern industries, but also the most critical one to the surface quality of the products such as semi conductor wafers and LED sapphire wafers. With the required specifications for the wafer surface quality getting more and more strengthened, the manufacturers are spending huge amount of cost to renew the machine to meet the enhanced surface specifications. Surface qualities of the wafers are mostly damaged by the structural vibrations of the polishing machines. In this paper, the dynamic characteristics of a wafer polishing machine have been analyzed through the frequency response test and the computer simulation. And the supporting structure of a polishing machine has been investigated to minimize the vibration transmissions, to improve the stability of the machine and further to reduce the defects of the polished products. The result of the study shows that simple design modifications of the supporting structure without altering the main structure of the machine can substantially suppress the vibrations of the machine with negligible expenses.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.651-652
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• 2005

Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in integrated circuit manufacturing. Especially, polishing pad is considered as one of the most important consumables because of its properties. Generally, conventional polishing pad has irregular pores and asperities. If conditioning process is except from whole polishing process, smoothing of asperities and pore glazing occur on the surface of the pad, so repeatability of polishing performances cannot be expected. In this paper, CMP pad with microstructure was made using micro-molding technology and repeatability of ILD(interlayer dielectric) CMP performances and was evaluated.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.5
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• pp.795-799
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• 2013

This paper describes a novel hybrid surface polishing process combining non-traditional electrochemical polishing (ECP) with external artificial ultrasonic vibration. The purpose of this study is to develop an easier method for improving stainless steel surfaces. To this end, vibration electrochemical polishing (VECP), a novel ultrasonic manufacturing process, for enhancing electrochemical reaction and surface quality compared with that achieved using conventional ECP is suggested. In addition, for finding the optimized experimental conditions, the two methods are compared under various current densities. Localized roughness of the work material is measured with atomic force microscopy (AFM) and scanning electron microscopy (SEM) for obtaining detailed surface information.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.102-107
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• 2009

This study has been focused on an effective surface finishing method combining ELID (ELectrolytic In-process Dressing) and MAP (Magnetic Assisted Polishing) for the nano-precision mirror grinding of glass-lens molding mould. ELID grinding is an excellent technique for mirror grinding of various advanced metallic or nonmetallic materials. A polishing process is also required for elimination of scratches present on ELID grinded surfaces. MAP has been used as polishing method due to its high polishing efficiency and superior surface quality. It also presents some techniques for achieving the nanometer roughness of the hard material such as WC-Co, which are extensively used in precision tooling material.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.609-613
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• 2004

On this study, electrochemical polishing is adapted to ultra-fine surface for semiconductor large radius gas-tube. The system which buffing and electrochemical polishing can be performed simultaneously was constructed in connection with developing exclusive system. Based on existing papers and the research of background, electrode gap and electrolyte flow were fixed. Current density and electrochemical precision time were chosen as variables. On this study, it is objected to find optimal precision condition and precision variables on the in-process electrochemical polishing.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.3
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• pp.108-112
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• 2011

In order to obtain excellent flatness and surface roughness of glass substrate disk, uniform distribution of abrasives should be important for uniform polishing. We introduced coated-type magnetic abrasives and magnetic field to a lapping for the improvement of surface roughness and removal rate. Polishing properties with the conventional diamond abrasives and the coated-type magnetic abrasives were compared. As a result, the coated-type magnetic abrasives showed small surface roughness and large removal rate by applying magnetic field. And it also was shown that coated-type magnetic abrasives could save the more amount of polishing liquid under the same removal rate than the conventional diamond abrasives can.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.5
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• pp.616-621
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• 2010

New type of the base material of the light-emitting diode requires copper wafer in view of heat and electrical conductance. Therefore, polishing process of the substrate level is needed to get a nanometer level of surface roughness as compared with pattern structure of nano-size in the semiconductor industry. In this paper, a series of lapping and polishing technique is shown for the rough and deflected copper substrate of thickness 3mm. Lapping by sand papers tried air cooling method. And two steps of polishing used the diamond abrasives and the $Al_2O_3$ slurry of size 100mm considering the residual scratch. White-light interferometer proved successfully a mirror-like surface roughness of Ra 6nm on the area of $0.56mm{\times}0.42mm$.