• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.445-448
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• 2002

New banana-shaped achiral compounds, 1,3-phenylene bis [4-{4-(7-octenyloxy)phenyliminomethyl}benzoate](PBOEB), 1,3-phenylene bis [4-{3-fluoro-4-(7-octenyloxy)phenyliminomethyl}benzoate] (PBFOEB), 1,3-phenylene bis [4-{4-(10-undecyloxy)phenyliminomethyl}benzoate](PBEUB), and 1,3phenylene bis [4-{3-fluoro-4-(10-undecyloxy)phenyliminomethyl}benzoate](PBFEUB) were obtained by general synthetic methods. PBOEB and PBFOEB having the octenyloxy groups such as $-(CH_2)_6CH=CH_2$ showed ferroelectric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/$cm^2$ and 225 nC/$cm^2$, respectively. PBEUB and PBFEUB having the undecyloxy groups such as $-{CH_2)_9CH=CH_2$ showed antiferroelectric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/$cm^2$ and 140 nC/$cm^2$, respectively. We could obtain ferroelectric and antiferroelectric phases by controlling the number of carbon atom in alkenyloxy chains of bent-core molecules.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.352-355
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• 2003

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization $P_r$ and coercive field were $23.5\;{\mu}C/cm^2$ and 120 kV/cm, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.175-177
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• 2006

Here we report an enhanced flexoelectric switching in a self-assembled system of smectic liquid crystal and some specific dopant. The assembled unit block seemed to have electric dipole and as a result induces large flexoelectric polarization due to its asymmetric shape and shows fast switching to the electric field. The unit blocks are oriented in a helical fashion in the cell with large gap (${\sim}5{\mu}m$) and shows selective reflection property. In the thin cell (${\sim}2{\mu}m$), the unit blocks are aligned homeotropically on the bare ITO substrate with no surface treatment and shows fast decaying time.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.191-194
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• 1999

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

• 대한기계학회논문집A
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• 제27권4호
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• pp.577-584
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• 2003

A crack with growth in ferroelectric ceramics under purely electric loading is analyzed. The crack tip stress intensity factor for the growing crack under small-scale conditions is evaluated by employing the model of nonlinear domain switching. The crack tip stress intensity factor increases or decreases with crack growth, depending on the electrical nonlinear behavior and the direction of an applied electric field. It is shown that the ferroelectric material can be either toughened or weakened as the crack grows. The steady state crack growth in ferroelectric ceramics is also discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.178-181
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• 2003

In this work, we etched PZT films with various additive gases ($O_2$ and Ar) in $Cl_2/CF_4$ plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in $O_2$ or Ar added $Cl_2/CF_4$ were compared, the value of remanent polarization in $O_2$ added $Cl_2/CF_4$ plasma is higher than that in Ar. added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added $Cl_2/CF_4$ gas having mixing ratio of 8/2 and 110 nm/min for 10% $O_2$ added to that same gas mixture. In order to recover the ferroelectic properties of the PZT thin films after etching, we annealed the etched PZT thin films at $550^{\circ}C$ in an $O_2$ atmosphere for 10 min. From the hysteresis curves, leakage current, retention property and switching polarization, the reduction of the etching damage and the recovery via the annealing was turned out to be more effective when $O_2$ was added to $Cl_2/CF_4$ than Ar. X-ray diffraction (XRD) showed that the structural damage was lower when $O_2$ was added to $Cl_2/CF_4$. And the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks.

• 한국정보전자통신기술학회논문지
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• 제10권3호
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• pp.199-205
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• 2017

도심의 빌딩 등 인구밀집지역에서 사용되는 소형 셀 기지국에서는 셀 용량 증대를 위해 이중편파 다중안테나(MIMO)가 주로 사용된다. 본 논문은 이중편파 다중안테나(MIMO)를 사용하는 소형 셀의 용량을 향상시킬 수 있는 높은 교차편파분리도(XPD)를 가지는 이중편파 슬롯 안테나를 제안한다. 제안한 안테나는 평형구조 및 차동 급전회로를 사용하여 교차편파를 효과적으로 억제하고 높은 교차편파분리도(XPD)를 가진다. 또한 두 편파가 동일한 방사특성을 가지게 되어 소형 셀 다중안테나(MIMO) 시스템에 적합한 특성을 가진다. 모의실험, 제작 및 측정결과 제안한 안테나는 반사계수 -10 dB를 기준 180 MHz (2.51~2.7 GHz)의 대역폭, 최대 4.5 dBi 방사이득(3.5~4.5 dBi), 85도의 반 전력 빔폭을 가짐을 확인하였다. 또한 평균 교차편파 분리도(XPD)가 26.4 dB로 기존의 단일방사체에 서로 다른 급전을 이용하는 방법, 스위칭을 통해 편파를 선택적으로 사용하는 방법에 비하여 13.8 dB이상 개선된 특성을 가짐을 확인하였다.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.267-271
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• 2000

The influence of photoexcited nonequilibrium carriers on domain switching and photovoltaic current was investigated in two kinds of poled La-modified PbTiO$_3$ferroelectric ceramics, (Pb$_{0.85}$La$_{0.15}$)TiO$_3$and (Pb$_{0.76}$La$_{0.24}$)TiO$_3$, under illumination in the absence of external electric field. Both photovoltaic current and cumulative AE event counts increased with illumination time. The observed nonsteady-state photovoltaic current could be explained on the basis of the cycles of a series of physical events consisting the establishment of space charge field by photoexcited carriers trapped at the grain boundaries, the photoinduced domain switching, and the increase in the remanent polarization. An analysis of energy distribution of the observed AE signals also revealed that the space charge field in (Pb$_{0.85}$La$_{0.15}$)TiO$_3$allowed both 18$0^{\circ}C$ and 90$^{\circ}$domains to be switched during illumination.

• 대한전자공학회논문지TC
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• 제45권1호
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• pp.78-84
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• 2008

본 논문에서는 위성 DMB 시스템에서 원형편파 변환 특성을 갖는 reconfigurable 원형 링 슬롯 안테나를 제안한다. 제안된 안테나는 원형 링 슬롯과 원형편파를 발생시키기 위한 4개의 튜닝 스터브로 구성되어 있다. 슬롯과 스터브 사이 각각의 경계면에 4개의 PIN 다이오드를 실장 하였으며 각각의 PIN 다이오드는 외부 DC전압으로 인해 동작되며 RHCP(Right Hand Circular Polarization) 모드 또는 LHCP(Left Hand Circular Polarization) 모드로 동작하도록 하였다. 측정결과, 제안된 안테나는 임피던스 대역폭(VSWR${\leq}$2)이 LHCP 모드에서 570MHz(2.47-3.04GHz), RHCP 모드에서 560MHz(2.45-3.01GHz)로 나타났으며 중심주파수 2.63GHz에서의 최대 방사이득은 LHCP 모드에서 4.76dBi, RHCP 모드에서 3.1dBi를 얻었다. 또한 측정된 축비 대역폭은 RHCP, LHCP 모드에서 약 100MHz를 얻었다. 제안된 안테나는 편파변환 특성이 요구되는 환경의 위성통신, 무선랜 및 광대역 무선통신 시스템에 적합할 것으로 사료된다.