• Transactions on Electrical and Electronic Materials
• /
• v.7 no.3
• /
• pp.145-148
• /
• 2006

In this study, the response surface modeling of the pretilt angle control using in-situ photoalignment method with oblique UV exposure .on plastic substrate is investigated. The pretilt angle is the main factor to determine the alignment of the liquid crystal display. The response surface model is used to analyze the variation of the pretilt angle on the various process conditions. Heating temperature and UV exposure time are considered as input factors. The liquid crystal (LC) pretilt angle increased with increasing heating temperature and UV exposure time. The analysis of variance is used to analyze the statistical significance and the effect plots are also investigated to examine the relationship between the process parameters and the response.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.375-378
• /
• 2004

In this paper, we fabricated pantacene TFTs using PVP copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and poly (melamine-co-formaldehyde) the performance has been changed. We obtained the best performance with the mobility of 0.12cm2/V sec and the on/off current ratio of $1.19{\times}10^6$ for the case of $10wt\%$ PVP copolymer mixed with $5wt\%$ poly(melamine-co-formaldehyde). Additionally using OTFTs with the above PVP gate insulator, we fabricated the integrated circuit including inverter which produced the gain of 5.56 on the glass substrate and gain of 9.7 on the plastic (PET) substrate. And the threshold voltage was respectively +8V and +14v$ldots$

• Proceedings of the Korean Vacuum Society Conference
• /
• 2002.06a
• /
• pp.72-72
• /
• 2002

• Proceedings of the Korean Vacuum Society Conference
• /
• 2002.06a
• /
• pp.100-100
• /
• 2002

• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.429-430
• /
• 2006

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1178-1181
• /
• 2006

We fabricated a flexible OTFT(organic thin film transistor) backplane for the electrophoretic display. The backplane was composed of $128{\times}96pixels$ on the Polyethylene Naphthalate substrate in which each pixel had one OTFT. The OTFTs employed bottom contact structure and used the cross-linked polyvinylphenol for gate insulator and pentacene for active layer

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1515-1518
• /
• 2009

Hydrophobic treatments were conducted for different kinds of substrates, glass substrate, silicon wafer and plastic substrate. Ar-$CH_4$ gas mixture was used as a discharge gas for the hydrophobic treatment. The change of the contact angle before and after treatment was measured and compared. Time evolution of the contact angle change after hydrophobic treatment was investigated.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1455-1458
• /
• 2008

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.799-802
• /
• 2008

The metal films ink-jetted using the conductive ink based on a mixture of copper and silver nanoparticles were investigated. The porosity and resistivity of films were minimized by adjusting the mixing ratio of Cu and Ag nanoparticles. We demonstrated that the printed tracks with good conductivity could be obtained at sufficiently lower annealing temperatures where plastic substrates could be used.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1131-1134
• /
• 2003

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.