• Title/Summary/Keyword: Plasma treatment

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Plasma Surface Treatment of the Polymeric Film with Low Temperature Process (저온프로세스를 이용한 고분자필름의 플라즈마 표면처리)

  • Cho, Wook;Yang, Sung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.486-491
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    • 2008
  • The plasma processing is applied to many industrial fields as thin film deposition or surface treatment technique. In this study, we investigated large-area uniformed surface treatment of PET film at low temperature by using Scanning Plasma Method(SPM). Then, we measured difference and distribution of temperature on film's surface by setting up a thermometer. We studied the condition of plasma for surface treatment by examining intensity of irradiation of uniformed plasma. And we compared contact angles of treated PET film by using Ar and $O_2$ plasma based low temperature. In our result, surface temperature of 3-point of treating is low temperature about $22^{\circ}C$, in other hands, there is scarcely any variation of temperature on film's surface. And by using Ar plasma treatment, contact angle is lower than untreatment or $O_2$ plasma treatment. In case of PET film having thermal weak point, low temperature processing using SPM is undamaged method in film's surface and uniformly treated film's surface. As a result, Ar plasma surface treatment using SPM is suitable surface treatment method of PET film.

Measurement of Changes in Work Function on MgO Protective Layer after H2-plasma Treatment (수소 Plasma 처리 후의 MgO 보호막에 대한 일함수 변화 측정)

  • Jeong, Jae-Cheon;Rhee, Seuk-Joo;Cho, Jae-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.7
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    • pp.611-614
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    • 2007
  • The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

Treatment of surface water using cold plasma for domestic water supply

  • Nguyen, Dung Van;Ho, Phong Quoc;Pham, Toan Van;Nguyen, Tuyen Van;Kim, Lavane
    • Environmental Engineering Research
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    • v.24 no.3
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    • pp.412-417
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    • 2019
  • This paper presents the results of using cold plasma to treat surface water for domestic use purpose. Experimental results showed that cold plasma was an effective method for destroying bacteria in water. After treatment with cold plasma, concentration of coliform and Escherichia coli dramatically reduced. Besides, cold plasma significantly removed water odor, increased dissolved oxygen and decreased the concentration of chemical oxygen demand. However, cold plasma significantly raised the concentration of nitrite and nitrate. Other disadvantages of treating with cold plasma were conductivity increase and pH reduction. Pretreatment steps of coagulation, flocculation, sedimentation and sand filtration followed by disinfection with cold plasma exhibited a high efficiency in surface water treatment. All parameters of surface water after treatment by using the prototype satisfied with the allowance standard of domestic water quality.

Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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Effects of Atmospheric Pressure Microwave Plasma on Surface of SUS304 Stainless Steel

  • Shin, H.K.;Kwon, H.C.;Kang, S.K.;Kim, H.Y.;Lee, J.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.268-268
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    • 2012
  • Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

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Study on Properties Change of a-C Thin Film by N2 Plasma Treatment (질소 플라즈마처리에 의한 a-C 박막의 전계방출특성 변화에 관한 연구)

  • Ryu, Jeong-Tak;Lee, K.Y.;Honda, S.;Katayama M.;Oura, K.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1332-1336
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    • 2004
  • Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by $N_2$ gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after $N_2$ plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by $N_2$ plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/$\mu$m, but the a-C film treated by $N_2$ plasma for 30 min exhibit threshold field as low as 6.5 V/$\mu$m.

N$_2$ Plasma Treatment Effects of Silicon Nitride Insulator Layer for Thin Film Transistor Applications

  • Ko, Jae-Kyung;Park, Yong-Seob;Park, Joong-Hyun;Kim, Do-Young;Yi, Jun-Sin;Chakrabarty, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.563-566
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    • 2002
  • We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

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Inactivation of Wilt Germs (Fusarium oxysporum f. sp. radicis lycopersici) using Dielectric Barrier Discharge Plasma in Hydroponic Cultivation System (양액재배 시스템에서 유전체장벽방전 플라즈마를 이용한 시들음병균(Fusarium oxysporum f. sp. radicis lycopersici)의 불활성화)

  • Park, Young-Seek
    • Journal of Environmental Science International
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    • v.28 no.5
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    • pp.495-502
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    • 2019
  • This study was conducted to investigated the possibility of inactivating wilt germs (Fusarium oxysporum f. sp. radicis lycopersici) using Dielectric Barrier Discharge (DBD) plasma in a hydroponic system. Recirculating hydroponic cultivation system for inactivation was consisted of planting port, LED lamp, water tank, and circulating pump for hydroponic and DBD plasma reactor. Two experiments were conducted: batch and intermittent continuous process. The effect of plasma treatment on Total Residual Oxidants (TRO) concentration change, Fusarium inactivation and growth of lettuce were investigated. In the batch experiment, most of the Fusarium was inactivated at a TRO concentration of 0.15 mg/L or more at four-day intervals. There was no change in lettuce growth after two times of plasma treatment for one week. The intermittent continuous experiment consisted of 30-minute, 60-minute, and 90-minute plasma treatment in 2 day intervals and 30-minute treatment a one-day; most of the Fusarium was inactivated only by treatment for 30-minute every two days. However, if inactivation under $10^1CFU/mL$ is required, it will be necessary to treat for 60 minutes in 2 day intervals. The plasma treatment caused no damage to the lettuce, except the 30 min plasma treatment ay the one-day interval. It was considered that the residual TRO concentration was higher than that of the other treatments.

Effect of Ar- Plasma Treatment on Mechanical Properties of Acrylic Fiber (아크릴섬유의 기계적 물성에 대한 알곤플라즈마 처리의 영향)

  • Seo Eon Deock
    • Textile Coloration and Finishing
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    • v.16 no.6
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    • pp.30-34
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    • 2004
  • Polyacrylontrile fiber was modified with argon low temperature plasma by RF glow discharge at 240 mTorr, 40 W to investigate the surface morphological changes and mechanical characteristics such as elongation, tenacity, and modulus. Analysis of the SEM images revealed that the plasma treatment resulted in significant ablation on the surfaces rendering a severe crack formation. The morphological changes were evident with short treatment time of argon plasma although longer treatment time damaged the surface more severely. The mechanical characteristics such as tenacity and elongation were deteriorated due to the plasma treatment. The tenacity of the fiber treated with argon-plasma for 5 min showed a decreased value up to 21.9 % when compared to the untreated fiber. While the corresponding initial modulus(0 - 1 %) increased markedly up to 44.3 %.

Effect of Plasma Surface Treatment on Electrical and Mechanical Properties of Poly(ethylene terephthalate ) Film (플라즈마 표면처리가 Poly(ethylene terephthalate) 필름의 전기적 및 기계적 성질에 미치는 영향)

  • 임경범;이덕출
    • Journal of the Korean Society of Safety
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    • v.16 no.3
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    • pp.61-67
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    • 2001
  • In this study the electrical and mechanical characteristics of PET films ore analyzed after plasma surface treatment. After plasma treatment, the surface potential decay, surface potential and dielectric property were evaluated to analyze the electrical insulating property, and the tensile strength was measured as the mechanical characteristic. When plasma treatment was conducted for less than 10 minutes, it was found that the electrical insulating property was improved through evaporation of low molecular weight materials md cleaning of surface. However, for more than 10 minutes, the insulating property of plasma treated PET films was decreased due to excessive discharge energy. The tensile strength was hardly changed by Plasma treatment.

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