• Proceedings of the KSME Conference
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• 2001.06d
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• pp.939-944
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• 2001

For the application of simultaneous $DeSO_{2}\;&\;DeNO_{x}$ equipment using non-thermal plasma process to the industrial and power plants, the many types of plasma device and process were studied. The e-beam and pulsed plasma corona discharge process are outstanding for the study to apply commercial large-scale plant from among these. In this paper, non-thermal plasma of technical trends and the characteristics of system developed by Doosan heavy industries & construction Co., Ltd. are explained. We have researched pulsed plasma corona discharge process since 1994. At the basis of reasonable results for the pilot plant, we constructed the demonstration plant at a domestic coal-fired power plant in 1999, as the previous step for commercial use. In near future, enough information about designs and costs of commercial-size system will be obtained.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.491-491
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• 2013

A novel plasma system has been developed for 3-dimensional modification of the carbon nano-powders. Improvement of dispersion of these nano materials are studied by plasma discharge, not using chemical modification. The plasma process is considered to great advantages over wet chemical process due to environmental, economic viewpoint, and uniformity over the treated volume. The uniform dispersion is a critical factor for these material's nano composite applications. Using this plasma system, graphene, carbon black, and CNT was treated and functionalized. Several key discharge conditions such as Ar/H2/O2 or Ar/H2/NH3 gas ratio, treatment time, power, feeder's vibration frequency are investigated. Hydrophobic of graphene has turned some more into hydrophilic by reaction test with water, electrophoresis, surface contact angle test, and turbidity analysis. The oxygen content ratio in the plasma treated CNT has increased about 3.7 times than the untreatedone. In the case of graphene and carbon black, the oxygen- and nitrogen- content has been enhanced average 10%. O-H (N-H) peak, C-O (C-N) peak, and C=O (C=N) peak data have been detected by FTIR measurement and intensified compared to before-plasma treatment due to O2 or NH3 content.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.595-598
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• 2009

The authors describe an analytical method to determine total chlorine in a sanitizer liquid, incorporating a lab-made He-rf-plasma within a PDMS polymer microchip. Helium was used instead of Ar to produce a plasma to achieve efficient Cl excitation. A quartz tube 1 mm i.d. was embedded in the central channel of the polymer microchip to protect it from damage. Rotational temperature of the He-microchip plasma was in the range 1350-3600 K, as estimated from the spectrum of the OH radical. Chlorine was generated in a volatilization reaction vessel containing potassium permanganate in combination of sulfuric acid and then introduced into the polymer microchip plasma (PMP). Atomic emission lines of Cl at 438.2 nm and 837.7 nm were used for analysis; no emission was observed for Ar plasma. The achieved limit of detection was 0.81 ${\mu}g\;mL^{-1}$ (rf powers of 30-70 W), which was sensitive enough to analyze sanitizers that typically contained 100-200 ${\mu}g\;mL^{-1}$ of free chlorine in chlorinated water. This study demonstrates the usefulness of the devised PMP system in the food sciences and related industries.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1706-1711
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• 2016

Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.802-805
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• 2003

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.11
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• pp.1219-1226
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• 1990

This paper is to report the results on the design and construction of a thermal plasma generator with high current DC source. Also, this paper presents the methods to stabilize plasma and to find effects of process variables on plasma characteristics. For this purpose, the reaction chamber, vacuum system, plasma generating torch, magnetic field generating coil with power supply, high current DC source and the other parts have been designed. Fundamental properties of the thermal plasma under various conditions have been measured and analyzed. Magnetic Reynolds Number has been introduced to explain the relationship between plasma and external magnetic field. Through this number, the effect of magnetic field on the plasma has been explained under various flow rates and pressure. A sudden increase in the plasma voltage has been observed with the increase of magnetic field. From this, fundamental changes in plasma flow are believed to occur at the nozzle, and an effort to explain the phenomenon has been tried.

• 한국가시화정보학회:학술대회논문집
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• 2002.11a
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• pp.53-54
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• 2002

Plasma ignition method has been applied in various fields particularly to the rocket propulsion, pyrotechnics, explosives, and to the automotive air-bag system. Ignition method for those applications should be safe and also operate reliably in hostile environments such as; electromagnetic noise, drift voltage, electrostatic background and so on. In the present study, a semiconductor bridge (SCB) plasma ignition device was fabricated and its plasma characteristics including the propagation speed of the plasma, plasma size, and plasma temperature were investigated with the aid of the visualization of micro scale plasma $(i.e.,\;\leq\;350\;{\mu}m)$, which generated from a Micro-Electro-Mechanical poly-silicon semiconductor bridge (SCB).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.