• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.226-226
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• 2004

• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.79-83
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• 2008

The dampness by treating the surface with polyethylene terephthalate (PET) film was measured to grasp the plasma parameters and was observed the surface condition with an atomic force microscope (AFM) to find the causes of the dampness. Also, the vibrational and rotational temperatures in the plasma were calculated after identifying the radicals within the plasma by analyzing the emission spectral with an emission spectrum. The hydrophilic properties were enhanced, by treating the surface of the PET film with non-equilibrium atmospheric discharge plasma. When the rotational temperature was 0.22 to 0.31 eV within the plasma, surface modification control could be easily carried out to surface treatment of PET film on non-equilibrium atmospheric pressure plasma.

• 한국표면공학회지
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• 제29권5호
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• pp.371-378
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• 1996

An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.

• 한국표면공학회지
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• 제34권5호
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• 한국의류학회지
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• 제36권10호
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• pp.1117-1124
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• 2012

This study was a preliminary study to investigate the influence of surface morphology and characteristics on the self-cleaning of substrates. PI film was treated by $O_2$ plasma to modify the surface; in addition, AFM and Fe-SEM were employed to examine the morphological changes induced on a PI film treated by $O_2$ plasma and surface energies calculated from measured contact angles between several solutions and PI film based on the geometric mean and a Lewis acid base method. The surface roughness of PI film treated by $O_2$ plasma increased with the duration of the $O_2$ plasma on PI film due to the increased surface etching. The contact angle of film treated by $O_2$ plasma decreased with the increased treatment time in water and surfactant solution; in addition, the surface energy increased with the increased treatment times largely attributed to the increased portion on the polar surface energy of PI film. The coefficient of the correlation between surface roughness and surface polarity such as contact angle and surface energy was below 0.35; however, it was over 0.99 for the contact angle and surface energy.

• 한국표면공학회지
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• 제36권1호
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1419-1424
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• 2006

We could reduce the reflection from PET(polyethylene terephthalate) film surface by natural plasma etching which does not use etch masks. The plasma etched PET film showed lower reflectance and higher transmittance which is resulted by making subwavelength structure(SWS) on the film surface by the plasma etch rate difference between the amorphous and crystalline region in the surface of PET film.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.65-66
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• 2001