Etching characteristics of ZnO thin films using inductively coupled $BCl_3$/Ar and $Cl_2$/Ar plasma

  • Na, S.W. (Dept. of Materials Science and Engineering and Center for Advanced Plasma Surface Technology Sungkyunkwan University) ;
  • Shin, M.H. (Dept. of Materials Science and Engineering and Center for Advanced Plasma Surface Technology Sungkyunkwan University) ;
  • Chung, Y.M. (Dept. of Advanced Materials Engineering and Center for Advanced Plasma Surface Technology Sungkyunkwan University) ;
  • Han, J.G. (Dept. of Advanced Materials Engineering and Center for Advanced Plasma Surface Technology Sungkyunkwan University) ;
  • Jeung, S.H. (Dept. of Chemistry and Center for Advanced Plasma Surface Technology Sungkyunkwan University) ;
  • Boo, J.H. (Dept. of Chemistry and Center for Advanced Plasma Surface Technology Sungkyunkwan University) ;
  • Lee, N.E. (Dept. of Materials Science and Engineering and Center for Advanced Plasma Surface Technology Sungkyunkwan University)
  • Published : 2004.08.19