• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
• /
• pp.1273-1274
• /
• 2006

In recent, it became necessary to develop the technology about electrodeless fluorescent lamp according to demand of the electrodeless fluorescent lamp system that used higher efficiency and advantage of long lifetime. Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. An electric power efficiency of electrodeless fluorescent lamp has big relative property of gas in lamp, gas pressure, lamp formation, ingredients of magnetic substance and shape and action frequency etc. We used magnetic substance that open self-examination material of electrodeless fluorescent lamp antenna. Ferrite that is used in this experiment was Mn-Zn type. We have examined temperature and flux characteristic by frequency. Considering using frequency 2.65[MHz], Frequency was changed from 2.05[MHz] to 3.05[MHz] to recognize flux and temperature change of lamp. I used LMS(Lighting Measurement System) to measure flux and IR Camera to measure temperature of lamp.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
• /
• pp.82-85
• /
• 2006

As a display becomes large recently, Acquisition of high luminance and Luminance uniformity is becoming difficult in the existing CCFL or EEFL backlight system. So, study for a performance enhancement has enforced. but lamp development of flat type is asked for high luminance and a luminance uniformity security in of LCD and area anger trend ultimately. In this paper, we changed a tip shape of an electrode for production by the most suitable LCD backlight surface light source, and confirmed discharge characteristic along discharge gas pressure and voltage, and confirmed electric field distribution and discharge energy characteristic through a Maxwell 2D simulation. Therefore the discharge firing voltage characteristic showed a low characteristic than a rectangular type and round type in case of electrode which used tip of a triangle type, and displayed a discharge electric current as a same voltage was low.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.1475-1480
• /
• 2004

Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

• 대한기계학회논문집A
• /
• 제31권6호
• /
• pp.679-685
• /
• 2007

Superhydrophobic surface, with a water contact angle greater than $150^{\circ}$, has a self-cleaning effect termed 'Lotus effect'. This surface is created by the combination of rough surface and the low surface energy. We proposed square pillar and square shapes to control surface roughness. Microstructure arrays are fabricated by DRIE(Deep Reactive Ion Etching) process and followed by PPFC(Plasma Polymerized Fluorocarbon) deposition. On the experimental result, contact angle at square pillar arrays is well matched with Cassie's model and largest contact angle is $173.37^{\circ}$. But contact angle of square pore shape arrays is lower than Cassie's theoretical contact angle about $5{\sim}10%$. Nevertheless, square pore arrays have more rigidity than square pillar arrays.

• Journal of Magnetics
• /
• 제6권3호
• /
• pp.90-93
• /
• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• 한국재료학회지
• /
• 제12권1호
• /
• pp.21-26
• /
• 2002

In order to search new phosphors for plasma display panel(PDP), phosphate hosts which has a host excitation band at around 150nm were prepared and their luminescent properties were investigated. In the preparation of $YPO_4: Eu\; and\; (Y,Gd)PO_4: Eu$ phosphors, the effect of oxide and oxalate starting materials on prepared phosphors were compared in terms of relative emission intensities and particle characteristics. The results showed that oxalate starting materials gave better performance in emission intensities and smaller size and more round shape phosphors which would be more applicable for high resolution display. Additionally, Gd, V, Nb and Ta ions were doped to $YPO_4:Eu$ and the luminescent properties of the resulant solid solutions were investigated to find efficient sensitizer. Among these ions, Gd, V and Nb ions increased the emission intensities of parent phosphor to around 10%. While Nb ion gave the best result in emission intensities, CIE color coordinate were improved by doping V ion into $YPO_4:Eu$ phosphor to give x=0.6523, y=0.3406 compared to commercial sample.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1733-1734
• /
• 2006

In recent, it became necessary to develop the technology about electrodeless fluorescent lamp according to demand of the electrodeless fluorescent lamp system that used higher efficiency and advantage of long lifetime. Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. An electric power efficiency of electrodeless fluorescent lamp has big relative property of gas in lamp, gas pressure, lamp formation, ingredients of magnetic substance and shape and action frequency etc. We used magnetic substance that open self-examination material of electrodeless fluorescent lamp antenna. Ferrite that is used in this experiment was Mn-Zn type. We have examined temperature and flux characteristic by frequency. Considering using frequency 2.65[MHz], Frequency was changed from 2.05[MHz] to 3.05[MHz] to recognize flux and temperature change of lamp. I used LMS(Lighting Measurement System) to measure flux and IR Camera to measure temperature of lamp.

• 한국분말재료학회지
• /
• 제30권5호
• /
• pp.436-441
• /
• 2023

Molybdenum-tungsten (Mo-W) alloy sputtering targets are widely utilized in fields like electronics, nanotechnology, sensors, and as gate electrodes for TFT-LCDs, owing to their superior properties such as high-temperature stability, low thermal expansion coefficient, electrical conductivity, and corrosion resistance. To achieve optimal performance in application, these targets' purity, relative density, and grain size of these targets must becarefully controlled. We utilized nanopowders, prepared via the Pechini method, to obtain uniform and fine powders, then carried out spark plasma sintering (SPS) to densify these powders. Our studies revealed that the sintered compacts made from these nanopowders exhibited outstanding features, such as a high relative density of more than 99%, consistent grain size of 3.43 ㎛, and shape, absence of preferred orientation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.236-236
• /
• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 대한기계학회논문집A
• /
• 제22권3호
• /
• pp.529-539
• /
• 1998

A quantitative study of impact damage of ${Al_2}}O_3}-TiO_2$ plasma coated soda-lime glasses was carried out and compared with that of the uncoated smooth glass specimen. The shape of cracks by the impact of steel ball was observed by stereo-microscope and the decrease of the bending strength due to the impact of steel ball was measured through the 4-point bending test. At the low velocity, cone cracks were occurred. As the impact velocity increases, initial lateral cracks were propagated on the slanting surface of a cone crack, and radial cracks were generated at the crushed site. When the impact velocity of steel ball exceeds the critical velocity, the contact site of specimen was crushed due to plastic deformation and then radial and lateral cracks were largely grown. Crack length of coated specimens was smaller than that of uncoated smooth specimen due to the effect of coating layer on the substrate surface. According to impact velocity, the bending strength of coated specimens had no significant difference, compared with that of the uncoated smooth specimen. But this represents that the bending strength of coated specimens was increased, considering the effect of sand blasting damage which was performed to increase the adhesion force of coating layer.