• Toxicological Research
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• v.13 no.3
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• pp.223-228
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• 1997

Quinones have been reported to undergo nonenzymatic reaction with thiols to generate reactive oxygens. It is therefore possible that the nonenzymatic reaction of quinones with thiols in plasma could lead to potentJared cellular toxicity or disease. When 1 mM menadione was added in plasma under pH 11.2, 7.4 and 5.0, the increase in oxygen consumption rate was the order of pH 11.2 > pH 7.4 > pH 5.0. In addition, oxygen consumption rates under plasma anticoagulated with trisodium citrate solution (pH 7.85) was significantly higher than those with acid-citrate-dextrose solution (pH 6.87). SOD and catalase reduced the rate of oxygen consumption induced by menadione in plasma. Taken together, these results suggest that the menadione-induced increased oxygen consumption was due to nonenzymatic reaction of menadione with thiols in the plasma. The presence of plasma has an additive effect on the increased oxygen consumption rates induced by the menadione treatments on our model tissue, platelets, as compared between washed platelet (WP) and platelet rich plasma (PRP). Cytotoxicity, as determined by LDH release, are well correlated with the oxygen consumption rates observed in each system and strongly suggest that menadione-induced cytotoxicity can be increased with the presence of blood plasma.

• Journal of the Korean Society of Propulsion Engineers
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• v.2 no.2
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• pp.1-13
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• 1998

When driven with a short (less than 30$\mu\textrm{s}$) low-energy pulse, the semiconductor bridge(SCB) produces a hot plasma that ignites explosive. The shape of plasma was observed using ultra high speed camera, the generation and the duration time of plasma were estimated by analyzing the ultra high speed camera image. The more energy supplied, the sooner the formation of the plasma was, and the size of the plasma was increased in proportion. The voltage variation of the bridge was measured and analyzed by comparing with the ultra high speed camera image.

• Journal of Korean Society for Atmospheric Environment
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• v.14 no.4
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• pp.333-342
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• 1998

Plasma process has great possibilities to remove SOx, NOx simultaneously with high treatment efficiency and is expected to be suitable for small or middle plants. It was accomplished to evaluate SO2, NOx control possibility and achieve basic data to control pollutants by use of Surface Discharge Induced Plasma Chemical Process (SPCP) in this study. O3 generation characteristics by discharge of a plate was proportional to O2 concentration and power consumption and inversely proportional to temperature and humidity, In case of dry air, NOx was highly generated by N2 and O2 in air during the plasma discharge process but it was decreased considerably as H2O was added. SO2 removal efficiency was very high, and removal rate was 170,350 mEA at 30,50 watt respectively in flue gas which is usually contain HIO. NOx removal efficiency was about 57% at 40 watt power consumption with 7.5% humidity. It is estimated that H2O has an important role in reaction mechanism with pollutants according to plasma discharge.

• Journal of Institute of Control, Robotics and Systems
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• v.4 no.4
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• pp.433-440
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• 1998

The purpose of this study is to provide an integrated process control system for plasma etching. The control system is designed to employ neural network for the modeling of plasma etching process and to utilize genetic algorithm to search for the appropriate selection of control input variables, and to provide a control chart to maintain the process output within a desired range in the real plasma etching process. The target equipment is the one operating in DRAM production lines. The result shows that the integrated system developed is practical value in the improved performance of plasma etching process.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.65-69
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• 1989

Mather type dense plasma focus device was develooped for the feasibili쇼 study in its application to the x-ray lithography. To etermine the electrical characteristics,the temporal begavior of the discharge current and the voltage was measured by using the Rogowski coil and the high voltage probe respectively. The results are 9 $\mu\textrm{s}$ of the period, 18m$\Omega$ of resistance and 0.16$\mu$Η of inductance. The average current sheath velocity was measured by the light signal emitted at the moving plasma sheath. The light signal was detected through two fiber bundles. When the applied voltage was 13 kV and the initial jpressure of argon was 21.8 Pa, the best plasma focus was occurred. The x-ray emission characteristics from the plasma focus was determined by the x-ray pictures taken by pinhole camera. It is focus that the plasma was focused at 1.4 cm distant position above the center electrode and its diameter was about 1.0 m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.85-89
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• 2021

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

• Journal of Korean Society for Atmospheric Environment
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• v.29 no.1
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• pp.27-37
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• 2013

CFCs (Chlorofluorocarbons) and HCFCs (Hydrochlorofluorocarbons) that are chemically stable were proven to be a greenhouse gases that can destroy ozone layer. On the other hand, HFCs (Hydrofluorocarbons) was developed as an alternative refrigerant for them, but HFCs still have a relatively higher radiative forcing, resulting in a large Global Warming Potential (GWP) of 1,300. Current regulations prohibit production and use of these chemicals. In addition, obligatory removal of existing material is in progress. Methods for the decomposition of these material can be listed as thermal cracking, catalytic decomposition and plasma process. This study reports the development of low cost and high efficiency plasma scrubber. Stability of steam plasma generation and effect of plasma parameters such as frequency of power supply and reactor geometry have been investigated in the course of the development. Method for effective removal of by-product also has been investigated. In this study, elongated rotating arc was proven to be efficient in decomposition of HFCs above 99% and to be able to generate stable steam plasma with steam contents of about 20%.

• Journal of Industrial Technology
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• v.26 no.B
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.139-144
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• 2009

A microwave plasma torch at the atmospheric pressure by making use of magnetrons operated at the 2.45 GHz and used in a home microwave oven has been developed. This electrodeless torch can be used to various areas, including industrial, environmental and military applications. Although the microwave plasma torch has many applications, we in the present work focused on the microwave plasma torch operated in pure steam and several applications, which may be used in future and right now. For example, a high-temperature steam microwave plasma torch may have a potential application of the hydrocarbon fuel reforming at one atmospheric pressure. Moreover, the radicals including hydrogen, oxygen and hydroxide molecules are abundantly available in the steam torch, dramatically enhancing the reaction speed. Also, the microwave plasma torch can be used as a high-temperature, large-volume plasma burner by injecting hydrocarbon fuels in gas, liquid, and solid into the plasma flame. Finally, we briefly report treatment of soils contaminated with oils, volatile organic compounds, heavy metals, etc., which is an underway research in our group.

• Analytical Science and Technology
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• v.5 no.1
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• pp.51-56
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• 1992

A method to determine the trace level of arsenic in scalp hair by the hydride generation(HG)-inductively coupled plasma(ICP) spectrometry is described. The optimum conditions for the generation of arsine($AsH_3$), and the interference effects from the concomitant ions were studied. Severe interference effect from Ni(II) is circumvented by the coprecipitation of arsenic with $La(OH)_3$. The detection limit of arsenic is 0.3ppm and the arsenic contents in scalp hair ranged 10~20ppb.