• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2009년도 한국우주과학회보 제18권2호
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• pp.43.1-43.1
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• 2009

Electromagnetic radiation at the plasma frequency and its second harmonic, the so-called plasma emission, is fundamental process responsible for solar type II and III radio bursts. There have also been occasional observations of higher-harmonic plasma emissions in the solar-terrestrial environment. We will present that the simulation effort on characterizing the electron beam-generated plasma emission process at POSTECH. We have developed fully electromagnetic particle-in-cell (PIC) simulation code with three dimensions. We simulated harmonic plasma emission with various beam condition. Qualitative comparison with the traditional plasma frequency and second harmonic radiation theory is in good agreement. Higher harmonic emissions agree with the theory of coalescence of Langmuir and harmonic EM wave.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.553-556
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• 2007

We previously reported a 27.12 MHz inductively coupled plasma source at atmospheric pressure for atomic emission spectrometry based on polymer microchip plasma technology. For the PDMS polymer microchip plasma, molecular emission was observed, but no metallic detection was done. In this experiment, a lab-made electrothermal vaporizer (ETV) with tantalum coil was connected to the microchip plasma for aqueous sample introduction to detect metal ions. The electrode geometry of this microchip plasma was redesigned for better stability and easy monitoring of emission. The plasma was operated at an rf power of 30-70 W using argon gas at 300 mL/min. Gas kinetic temperatures between 800-3200 K were obtained by measuring OH emission band. Limits of detection of about 20 ng/mL, 96.1 ng/mL, and 1.01 μ g/mL were obtained for alkali metals, Zn, and Pb, respectively, when 10 μ L samples in 0.1% nitric acid were injected into the ETV.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• 한국자동차공학회논문집
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• 제8권5호
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• pp.12-19
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• 2000

The increasing use of vehicles is causing air-pollution problems. Diesel vehicles are preferred to gasoline vehicles, because the diesel vehicles are superior to gasoline vehicles in terms of fuel consumption, durability, power and efficiency. But the emission reduction technologies for diesel vehicle are not developed well like those for gasoline vehicles. Moreover, the NOx and smoke emitted from diesel vehicle are recognized as a main source of the air-pollution in the urban areas. The emission reduction devices have been installed for each of the emission gas components. Using plasma(i.e. electrical energy)only, the emission gas was found to be reduced. The present paper investigate the effects of a low temperature plasma device in engine performance as well as in emission reduction with the change of the applied voltage and the loading rate of the engine.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1195-1198
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• 2005

The improvement of efficiency is the one of the most important part in AC PDPs . To achieve high efficiency, high VUV emission efficiency and High ion induces secondary electron emission coefficient are needed. We have measured the emission spectra of vacuum ultraviolet rays and ion induced secondary electron emission coefficient of MgO protective layer in surface discharge AC-PDP with binary and ternary gas mixtures. We have investigated electro-optical characteristics of AC-PDPs to optimum gas mixture for high efficient.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.802-805
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• 2003

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.5-9
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• 2019

Optical emission spectroscopy is used to identify chemical species and monitor the changes of process results during the plasma process. However, plasma process monitoring or fault detection by using emission signal variation monitoring is vulnerable to background signal fluctuations. IR heaters are used in semiconductor manufacturing chambers where high temperature uniformity and fast response are required. During the process, the IR lamp output fluctuates to maintain a stable process temperature. This IR signal fluctuation reacts as a background signal fluctuation to the spectrometer. In this research, we evaluate the effect of infrared background signal fluctuation on plasma process monitoring and improve the plasma process monitoring accuracy by using simple infrared background signal subtraction method. The effect of infrared background signal fluctuation on plasma process monitoring was evaluated on $SiO_2$ PECVD process. Comparing the $SiO_2$ film thickness and the measured emission line intensity from the by-product molecules, the effect of infrared background signal on plasma process monitoring and the necessity of background signal subtraction method were confirmed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• 센서학회지
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• 제15권4호
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• pp.284-290
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• 2006

This study uses neon, xenon, and helium gas mixture microdischarge to determine the effects of priming particles on the neon emission characteristics in an alternate current plasma display panel (AC PDP). The infrared (823 nm) and neon emission (585 nm) intensities are measured and compared in the blue cells in the case of new discharge with priming particles or conventional discharge without priming particles, respectively. It is found that the priming particles can produce a plasma discharge effectively even under the weak electric field condition, thereby resulting in reducing the neon emission intensity remarkably without sacrificing the IR emission intensity. As a result, it is found that the Ne emission intensity is reduced by about 46.4 % but the blue visible emission intensity is increased by about 15.2 % when compared with the conventional discharge without priming particles.

• 한국표면공학회지
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• 제32권3호
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• pp.385-388
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• 1999

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.