• Journal of Astronomy and Space Sciences
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• 제7권2호
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• pp.113-123
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• 1990

전자 beam이 중성 plasma계에 들어왔을 때의 상호작용을 이차원 정전 model을 사용하여 수치계산을 한 결과 beam의 밀도변화에 따라 상호작용이 큰 변화를 보이는 것으로 나타났다. beam 전자의 밀도가 주변 전자의 밀도보다 낮을 때는 많은 양의 beam들이 주변 plasma와의 상호작용을 통해 위상공간에서 vortex 구조를 보이며 입사지역으로부터 멀리 진행할 수 있었던 반면 beam 전자들의 밀도가 높을 때는 대부분의 beam 전자들이 입사지역으로 되돌아오는 희귀전류를 형성하였다. 이 때 자기장의 게기에 따라 전자보다 훨씬 질랴이 큰 ion들이 가속될 수도 있으며 전자들의 전파와 상호작용의 양상이 크게 바뀔 수 있는 것으로 나타났다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.802-805
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• 2003

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.736-739
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• 2009

We have studied that the secondary electron emission characteristics of functional layers which have different kinds of MgO sub-micrometer size powder in AC-PDP. We used cathodoluminescence(CL) and gamma focused ion beam (${\gamma}$-FIB) system for measurement of secondary electron emission characteristics. Also we made 6 inch test panel which applied functional layers for evaluation of discharge characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 전기의세계
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• 제27권3호
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• pp.36-42
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• 1978

It has been investigates that electric characteristics of plasma electron beam in N$_{2}$, H$_{2}$ and Ar gas jars under various gas pressures during electron beams are formed. The results are as follows: 1)Electron beam is formed in the region of positive resistance on the characteristic curve. This phenomenon is identical in N$_{2}$, H$_{2}$ and Ar gases. 2)But in Ar gas, electron beam is formed at relatively lower gas pressure than in H$_{2}$ and N$_{2}$. 3)In pure gas either N$_{2}$, H$_{2}$ and N$_{2}$ the lower the gas pressure, the higher the voltage drop for the same electron beam current. 4)The region in which electron beam is formed is limited at a given pressure. 5)Beyond the limit mentioned above, it becomes glow discharge state and the current increases radically. 6)At a given gas pressure, electron beam voltage, that is, electrical power input increases with gap length.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.507-510
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• 2004

Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1203-1206
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• 2005

Electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDP's) have been experimentally investigated in accordance with discharge time by a micro-probe in this experiment. The resolution of a step mortor to move in micro-Langmuir probe is 10um.[1-3] The used gas in this experiment is He-Ne-Xe (4%) mixure gas. And sustain voltage is 320V which is above of firing voltage for degradation. The electron temperature and plasma density can be obtained from current-voltage (I-V) characteristics of micro Langmuir probe, in which negative to positive bias voltage was applied to the probe. And Efficiency is calculated by formula related discharge power and light emission. Those experiments operated as various discharge time ($0{\sim}72$ Hours). As a result of this experiment, Electron Temperature was increased from 2eV to 5eV after discharge running time of 20 hours and saturates beyond 20 hours. The plasma density is inversely proportional to the square root of electron temperature. So the plasma density was decreased from $1.8{\times}10^{12}cm^{-3}$ to $8{\times}10^{11}cm^{-3}$ at above discharge running time. And the Efficiency was reduced to 70% at 60hours of discharge running time.

• 전기의세계
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• 제27권6호
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• pp.49-53
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• 1978

This paper investigates on the electric input characterisitcs of plasma electron beam in H$_{2}$ gas chamber with various pressures, effected by the shape and dimension of hollow screen cathode during electron beam is formed. The result are as follows: (1)Electron beam is formed in the region of positive resistance on the characteristic curve which shows the relation between the voltage and current of electron beam, independent of the shape and dimension of hollow screen cathode. (2)At a given electron beam current, electron beam voltage increases with the decreases of hollow screen cathode length and screen mesh number of it. (3)At a given electron beam current, electron beam voltage increases with the diameters of hollow screen cathode and electron beam hole of it.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.207-207
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• 2016

plasma group velocities of neon with oxygen admixture (ug) are obtained by intensified charge coupled device (ICCD) camera images at fixed gate width time of 5 ns. The propagation velocities outside interelectrode region are in the order of 104 m/s.The plasma ambipolar diffusion velocities are calculated to be in the order of 102 m/s. Plasma jet is generated by all fixed sinusoidal power supply, total gas flow and repetition frequency at 3 kV, 800 sccm and 40 kHz, respectively. The amount of oxygen admixture is varied from 0 to 2.75 %. By employing one dimensional convective wave packet model, the electron temperatures in non-thermal atmospheric-pressure plasma jet are estimated to be in a range from 1.65 to 1.95 eV.