• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.662-665
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• 2002

The growth of carbon nanotubes (CNTs) was carried out using ratio frequency plasma enhanced chemical vapor deposition (rf PECVD) system equipped with dc bias for the directional growth. Acetylene and ammonia gas were used as the carbon source and a catalyst. The relation between gas flow rate and dc bias on the growth of CNTs was investigated. We studied the relation between emission properties and the directionality of CNTs grown under different dc bias voltage.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.601-604
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• 2004

In this paper, we propose a driving circuit that can be operated with a lower voltage than that of the conventional circuit without reducing the discharge voltage. the circuit proposed in this paper has a merit to improve the electrical characteristics because it can be composed of switching devices with low voltage. The operation and efficiency using real devices. The features of the circuit proposed in this paper are as follows; the power loss can be decreased by the use of low voltage, the cost if the driving circuit for PDP can be reduced by the use of switching devices operated with low voltage.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.252-258
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• 1995

The purpose of this study is to provide the integrated process control system, utilizing neural network modeling, to search for the appropriate choice input, and to keep the process output within the desired rang in the real etch process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.356-357
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• 2008

The effects of $O_2$ plasma ashing process for surface treatment of nano-wire Bio-FET were investigated. In order to evaluate the plasma damage introduced by $O_2$ plasma ashing, a back-gate biasing method was developed and the electrical characteristics as a function of $O_2$ plasma power were measured. Serious degradations of electrical characteristics of nano-wire Bio-FET were observed when the plasma power is higher than 50 W. For curing the plasma damages, a forming gas anneal (2 %, $H_2/N_2$) was carried out at $400^{\circ}C$. As a result, the electrical characteristics of nano-wire Bio-FET were considerably recovered.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.595-596
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• 2013

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

• Journal of Power Electronics
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• v.7 no.4
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• pp.278-285
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• 2007

Recently, plasma display panels (PDP) have become the most promising candidate in the market for large screen size flat panel displays. PDPs have many merits such as a fast display response time and wide viewing angle. However, there are still concerns about high cost because they require complex driving circuits composed of high power switching devices to generate various voltage waveforms for three operational modes of reset, scan, and sustain. Conventional PDP driving circuits use path switches for voltage separation and a scan switch to offer a scan voltage for reset and scan operations, respectively. In addition, there exist reset switches to initialize PDPs by regulating the wall charge conditions with ramp shaped pulses, which means the necessity of specific power devices for the reset operation. Because power for the plasma discharge accompanied by a large current is transferred to a panel via path switches, high power rating switches are used for path switches. Therefore, this paper proposes a novel low-cost PDP driving scheme achieved by not only eliminating path switches but also merging the function of reset switches into other switches used for sustain or scan operations. The simulated voltage waveforms of the proposed topology and experimental results implemented in a 42-inch panel to demonstrate the validity of using a new gate driver that merges the functions of power switches are presented.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.218-218
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.277-277
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• 2010

In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.