• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.71-74
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• 2006

Discharge of the flat lamp lighting source research arc requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the flat lamp lighting source to understand property of lighting source is very important. distance of discharge electrode is 5.5mm and width is 16.5mm, we measured electron temperature and electron density measured with single langmuir probe in flat lamp. we tested the discharge from 100 Torr to 300 Torr pressure. the Pulse is rectangular pulse with frequency 20kHz and Duty ratio 20%. Resultly, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.574-577
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• 2007

We have measured the excited Xe atoms density in the $1s_5$ metastable states by laser absorption spectroscopy in counter discharged type AC-PDP. This experiment has shown the characteristic of the excited Xe atoms density which is relation to the visible light efficiency of PDP. The density of counter discharged AC-PDP have measured to be $9.47\;{\times}\;10^{13}\;cm{-3}$. The result has been shown to higher value than $1.45\;{\times}\;10^{13}\;cm^{-3}$ of conventional AC-PDP.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.209.2-209.2
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• 2016

Up to now, Plasma applications are thought as a leading technology in industrial, chemical and even medical and biological field. Especially, Due to direct discharge in liquid with reaction in ambient solution, plasma in liquid is useful plasma technology. Such as electro-surgery, water purification, radical generation for synthesis. For using those plasma applications efficiently, plasma characteristics should be understood in advance. But discharge in liquid is not much well-known about its characteristics. And plasma discharge in solution is difficult to generate and analysis due to electrolysis, vaporization and radical generation. So, We make stable plasma discharge in solution(saline 0.9%) without input gas. We also analyze new type of plasma source in thermal and electrochemical view. And we check characteristics of plasma in liquid. For example, plasma density and radical density(OH) with optical emission, thermal energy with thermometer, electrical energy with oscilloscope and so on. And we try to explain the bubble and plasma formation with circuit analysis.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1817-1819
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• 2004

From the plasma application point of view, electron temperature and density are one of the most important parameters for plasma process. But it is only available to control plasma by adjusting external factors like gas pressure and input power. In this paper, pulse-modulated plasma is generated by modulating 13.56GHz RF power with 1, 5, 10kHz pulse. And Langmuir probe technique is used to study the distribution of electron temperature and density. When modulated pulse is off, electron temperature decreases gradually in form of exponential decay. The value t of exponential decay slope is 33.619, 13.834, 10.803 in 1kHz. 5kHz. 10kHz. This implies that this method can be used to control electron temperature and density.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.1
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• pp.15-20
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• 1999

Visible light spectrum emitted from $H_2$ plasma in the parallel plate reactor using a commercial electric power are investigated by optical emission spectroscopy. Intensity of visible light is measured as a function of $H_2$ pressure and discharging power, and the intensity is compared with plasma density measured with the probe. As a result, the intensity is affected by plasma density and the plasma density is controlled the $H_2$ pressure and the discharging power.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.235.2-235.2
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• 2014

Plasma hardly grows in low pressure because of lack of collision. Especially, in extremely low pressure like 1 mTorr, the experiment scale is far larger than mean free path therefore plasma is hardly generated in such low pressure. But low pressure plasma has useful properties like low damage or fine sputtering process because it has typically low electron density. In here, thermal electron is used to make breakdown in low pressure easily and cylindrical geometry is used to help discharge easily. And we changed magnetic field strength to control electron density or temperature. In low pressure, density and temperature behavior is very interesting so its characteristics are examined here.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.579-579
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• 2013

We study on Argon metastable and 4p state neutral atom density in magnetized ICP Helicon plasmas by Laser Induced Fluorescence and plasma emission. The results show that metastable density is too low at the center of chamber due to significant neutral depletion. Otherwise, 4p state is high at the center of chamber because electron density is very high. Power and pressure dependence of metastable and 4p state neutral atom have been spatially measured in the radial direction of cylindrical chamber.