• Current Applied Physics
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• 제18권11호
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Journal of Advanced Marine Engineering and Technology
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• 제23권4호
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• pp.523-532
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• 1999

This study is aimed to obtain fundamental knowledge of pulse laser welding phenomena the authors investigated the structure and composition of evaporated particles of Al alloys in air and in the Ar atmosphere during pulsed laser welding. The ultra-fine particles of 5 to 100nm diameter in a globular or irregular shape were formed in laser-induced plasma and the main structure was $MgAl_2O_4$ The composition of particles was ifferent depending on the power density of a laser beam; namely under the low power density conditions magnesium was predominant in the parti-cles while aluminium content increased with an increase in the power density. These results were attributed to evaporation phenomena of metals with different boiling points and latent heats of vaporization. On the other hand the number density of laser-induced plasma species was obtained by Saha's equation. it was confirmed that the number density depends upon the plasma tempera-ture and total pressures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.94-94
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• 2010

As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1357-1359
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• 2009

Many researchers studied cell culturing on surfaces with chemical functional groups. Previously, we reported surface properties of plasma polymerized ethylenediamine (PPEDA) films deposited by plasma enhanced chemical vapor deposition with various plasma conditions. Surface properties of PPEDA films can be controlled by plasma power during deposition. In this work, to analyze correlation of cell adherence/proliferation with surface property, we cultured rat intestinal epithelial cells-18 on the PPEDA films deposited with various plasma powers. It was shown that as plasma power was decreased, density of cells cultured on the PPEDA film surface was increased. Our findings indicate that plasma power changed the amine density of the PPEDA film surface, resulting in density change of cells cultured on the PPEDA film surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1203-1206
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• 2005

Electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDP's) have been experimentally investigated in accordance with discharge time by a micro-probe in this experiment. The resolution of a step mortor to move in micro-Langmuir probe is 10um.[1-3] The used gas in this experiment is He-Ne-Xe (4%) mixure gas. And sustain voltage is 320V which is above of firing voltage for degradation. The electron temperature and plasma density can be obtained from current-voltage (I-V) characteristics of micro Langmuir probe, in which negative to positive bias voltage was applied to the probe. And Efficiency is calculated by formula related discharge power and light emission. Those experiments operated as various discharge time ($0{\sim}72$ Hours). As a result of this experiment, Electron Temperature was increased from 2eV to 5eV after discharge running time of 20 hours and saturates beyond 20 hours. The plasma density is inversely proportional to the square root of electron temperature. So the plasma density was decreased from $1.8{\times}10^{12}cm^{-3}$ to $8{\times}10^{11}cm^{-3}$ at above discharge running time. And the Efficiency was reduced to 70% at 60hours of discharge running time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.470-470
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• 2010

Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권4호
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• pp.107-112
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• 2001

Laser Thomson scattering measurements of electrom temperature and density in a neutral loop discharge (NLD) plasma were performed in order to reveal the electron behavior around the neutral loop (NL). The experimental results were examined by using a simulation model that included effects of a three dimensional electromagnetic field with spatial decay of the RF electric field, and the limitation of the spatial extent of the electron motion and collision effect. From the experiments and modeling of the electron behavior, it was found that NLD plasma posses the electron temeprature $T_{e}$ and density ne peaks around the NL is essential for the formation of plasma. Also, the optimum condition of plasma production could be simply estimated by the calculation of $U_{av}$ and $F_{0}$././.

• 한국분말재료학회지
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• 제16권6호
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• pp.403-409
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• 2009

Plasma spray forming is recently explored as a near-net-shape fabrication route for ultra-high temperature metals and ceramics. In this study, monolithic tungsten has been produced using an atmospheric plasma spray forming and subsequent high temperature sintering. The spray-formed tungsten preform from different processing parameters has been evaluated in terms of metallurgical aspects, such as density, oxygen content and hardness. A well-defined lamellae structure was formed in the as-sprayed deposit by spreading of completely molten droplets, with incorporating small amounts of unmelted/partially-melted particles. Plasma sprayed tungsten deposit had 84-87% theoretical density and 0.2-0.3 wt.% oxygen content. Subsequent sintering at 2500$^{\circ}C$ promoted the formation of equiaxed grain structure and the production of dense preform up to 98% theoretical density.

• 한국표면공학회지
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• 제32권4호
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• pp.513-520
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• 1999

In this study, we investigated the effects of variously configured magnets on the characteristics of the plasmas to enhance plasma uniformity and density of an inductively coupled plasma source. As the magnets, Helmholtz type axial electromagnets and various multi-dipole magnets types around the chamber wall were used. To characterize the plasma as a function of the combination of the magnets and magnetic field strengths, ion density, electron temperature, and plasma potential were measured using an electrostatic probe along the chamber diameter for Ar plasmas. The measured maximum ion densities were $8$\times$10^{ 11}$$cm^{-3}$ with 600W inductive power and at 5mTorr of operational pressure and the uniformity of ion density was less than 5.9% at 2mTorr of operational pressure. The combination of an optimized multi-dipole magnet type and an axial electromagnet showed the lowest electron temperature (3eV) and plasma potential ($34V{p}$ )

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.309-314
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• 1999

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.