• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• 전기의세계
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• v.22 no.2
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• pp.57-69
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• 1973

The aim of this study was to investigate the behaviors of plasma jet under coaxial magnetic field in paralled with it for controlling optical characteristics and input power of plasma jet without impurity and instability of arc plasma column. Because the discharge characteristics of plasma jet were so distinctively different according to the existence or non-existence of magnetic field, the input power, luminous intensity of plasma jet and thermal efficiency were comparatively studied in respect of such variables as arc current, gap of electrode, quantity of argon flow, magnetic flux density, diameter and length of nozzle, with the use of several materials which were different in diameter and length of nozzel. The results were as follows; 1) The voltage tends to show a drooping characteristic at law current and then rises gradually. The luminous intensity of plasma jet increases exponentially with arc current. 2) Arc voltage increases and luminous intensity tends to decrease gradually as gap of electrode increases. 3) Arc voltage and luminous intensity tends to decrease gradually as gap of electrode increases. 3) Arc voltage and luminous intensity increase in accordance with the quantity of argon flow. 4) At first step, arc voltage increases to maximum value with the growth of flux density and then tends to show a gradual decrease. Luminous intensity decreases with the growth flux density. 5) Arc voltage decreases as the constriction length of nozzle increases, maximum decrease is shown at the constriction length of 20(mm) and it increases beyond that value. The luminous intensity decreases as the constriction length grows. 6) Arc voltage and luminous in tensity increase with the growth of diameters of nozzle. 7) Thermal efficiency has values between 50% and 75%, being influenced by arc current, the quantity of argon flow, flux density, the length of electrode gap and the constriction length of nozzle.

• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.327-332
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• 1986

Spatial (radial and height) distribution of electron number density is measured for an inductively coupled plasma under five operating conditions: (1) no carrier gas, (2) carrier gas without aerosel, (3) carrier gas with aerosol, (4) carrier gas with desolvated aerosol, and (5) carrier gas with aerosol and excess lithium. A complete RF power mapping of electron density is obtained. The plasma electrons for a typical analytical torch are observed to be hollow at the radial center in the region close to the induction coil, but diffuse rapidly toward the center in the higher region of the plasma. The presence of excess Li makes no significant change in the electron density profiles. The increases in the RF power levels increase the values of electron density uniformly across the radial coordinate.

• Journal of Astronomy and Space Sciences
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• v.20 no.1
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• pp.53-62
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• 2003

SPS(Space Physics Sensor) onboard the KOMPSAT-I, which was launched at 1999, had transmitted ionospheric plasma density and electron temperature during the solar maximum from June 2000 to August 2001, SPS IMS onboard KOMPSAT-I occasionally detected abrupt plasma density enhancement in low-latitude region, in which the plasma density abruptly increases in a narrow region. Statistical analysis of the data obtained during the entire operational period shows that the occurrence probability of these events has its peak value at the Atlantic region and at the Hawaiian region where the geomagnetic field strength is weak. And the occurrence frequency has no correlation with Dst index or F10.7 index. The correlation between plasma density and the electron temperature shows a wide variety, but the anti-correlated cases are dominant.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• Asian-Australasian Journal of Animal Sciences
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• v.14 no.11
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• pp.1592-1597
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• 2001

Sixteen pigs from 2 distinct genetic lines (LGAH and VFIL) obtained after eight generations of divergent selection for high (H) and low (L) lean tissue growth rate with ad-libitum feeding (LGA) and voluntary feed intake (VF1), respectively, were used in this study. The objectives of this investigation were to establish appropriate working conditions for the postheparin plasma lipoprotein lipase (LPL) assay and to study relationships between fat deposition and plasma lipids, very low density lipoprotein (VLDL) lipids, VLDL-subfractions and postheparin plasma LPL activity in growing pigs. Four preliminary experiments were performed to determine the appropriate working conditions for the postheparin plasma LPL assays. Postheparin plasma preincubated with SDS (20-50 mM) at $26^{\circ}C$ for 45 minutes inhibited hepatic lipase activity. A total of $2{\mu}l$ VLDL/assay produced maximum stimulation of LPL activity. Postheparin plasma protein and increasing incubation time contributed an optimum response. LGAH pigs had a significantly higher proportion subtraction 2 than VFIL pigs. No differences were observed in postheparin plasma LPL activity and backfat thickness for two lines of pigs. There were positive correlations between backfat thickness and proportion of subtractions 2 and postheparin plasma LPL activity but the results were not statistically significant. Backfat thickness was not statistically correlated with proportion of subtraction 2 and postheparin plasma LPL activity in a multiple regression analysis. It is believed that the apolipoprotein E, which is present in higher quantities in VLDL-subfraction 2 plays an important role for clearing VLDL triacylglycerol into adipose tissue. LPL activity of pigs can be measured by using postheparin plasma technique. If the relationships of backfat thickness and VLDL-subfraction 2 and postheparin plasma LPL activity can be established, it suggests that these parameters could be used as indicators in selection programmes. Further experiments need to be conducted by using larger sample size and different breed of pigs with greater differences in backfat thicknesses to confirm these trends.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.513-514
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combination of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self-dc bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.118-123
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• 2023

Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

• Journal of the Korean Society of Propulsion Engineers
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• v.26 no.6
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• pp.1-9
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• 2022

This study introduces the calculation model of ionization composition and electrical conductivity for metallic plasma for practical application to modeling and simulation of modern electrical detonators. The present model includes the correction for non-ideality of dense plasma conditions which are expected in electrical explosion of bridge in detonators. The computational results for copper plasma show favorable agreement with experimental data for a wide range of plasma temperature and high density conditions and the model is proper for detonator modeling with good prediction accuracy.