• Annals of Laboratory Medicine
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• 제38권6호
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• pp.524-529
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• 2018

Background: An increase in neutrophil gelatinase-associated lipocalin (NGAL) indicates tubular injury. Diabetic nephropathy causes typical changes in the kidney, characterized by glomerulosclerosis and eventual tubular damage. We validated the usefulness of plasma NGAL (pNGAL) as a biomarker of tubular damage in patients with diabetic nephropathy. Methods: We included 376 patients with diabetes mellitus (260 patients with chronic renal insufficiency who had not received hemodialysis and 116 hemodialyzed due to diabetic nephropathy) and 24 healthy controls. Patients with chronic renal insufficiency were divided into three groups according to urinary albumin excretion (UAE) levels. pNGAL levels were measured using the Triage NGAL test (Alere, San Diego, CA, USA) and were compared between groups. We also examined whether pNGAL level was related to the degree of albuminuria and cystatin C-based glomerular filtration rate (GFR). Results: Mean pNGAL levels of the healthy controls, chronic renal insufficiency patients with diabetes mellitus, and hemodialyzed patients were $61.9{\pm}5.3ng/mL$, $93.4{\pm}71.8ng/mL$, and $1,536.9{\pm}554.9ng/mL$, respectively. pNGAL level increased significantly in patients with severe albuminuria (P <0.001) and had a moderate correlation with the degree of albuminuria (r=0.467; P <0.001) and GFR (r=0.519; P <0.001). Multivariate regression analysis showed that the pNGAL level was associated with tubular damage independent of patient age, sex, and GFR. Conclusions: pNGAL level independently reflects the degree of tubular damage in patients with diabetic nephropathy. Measurement of pNGAL, combined with UAE, would enable simultaneous, highly reliable assessments of tubular damage for such patients.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.449-453
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/Cl$_2$ and CF$_4$/Cl$_2$ inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Ar/Cl$_2$ gas mixing ratio of 2/8, a RF power of 800 W, a DE bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 $^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium etched by chemical reactions with Cl radicals assisted by Ar ion bombardments in Ar/Cl$_2$ plasma. In CF$_4$/Cl$_2$ plasma, yttrium are remained on the etched surface of YMnO$_3$ and formed of nonvolatile YF$_{x}$ compounds manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower value than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of YMnO$_3$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.s.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• 한국환경과학회지
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• 제28권5호
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• pp.495-502
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• 2019

This study was conducted to investigated the possibility of inactivating wilt germs (Fusarium oxysporum f. sp. radicis lycopersici) using Dielectric Barrier Discharge (DBD) plasma in a hydroponic system. Recirculating hydroponic cultivation system for inactivation was consisted of planting port, LED lamp, water tank, and circulating pump for hydroponic and DBD plasma reactor. Two experiments were conducted: batch and intermittent continuous process. The effect of plasma treatment on Total Residual Oxidants (TRO) concentration change, Fusarium inactivation and growth of lettuce were investigated. In the batch experiment, most of the Fusarium was inactivated at a TRO concentration of 0.15 mg/L or more at four-day intervals. There was no change in lettuce growth after two times of plasma treatment for one week. The intermittent continuous experiment consisted of 30-minute, 60-minute, and 90-minute plasma treatment in 2 day intervals and 30-minute treatment a one-day; most of the Fusarium was inactivated only by treatment for 30-minute every two days. However, if inactivation under $10^1CFU/mL$ is required, it will be necessary to treat for 60 minutes in 2 day intervals. The plasma treatment caused no damage to the lettuce, except the 30 min plasma treatment ay the one-day interval. It was considered that the residual TRO concentration was higher than that of the other treatments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.235.2-235.2
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• 2014

Plasma hardly grows in low pressure because of lack of collision. Especially, in extremely low pressure like 1 mTorr, the experiment scale is far larger than mean free path therefore plasma is hardly generated in such low pressure. But low pressure plasma has useful properties like low damage or fine sputtering process because it has typically low electron density. In here, thermal electron is used to make breakdown in low pressure easily and cylindrical geometry is used to help discharge easily. And we changed magnetic field strength to control electron density or temperature. In low pressure, density and temperature behavior is very interesting so its characteristics are examined here.

• Journal of Community Nutrition
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• 제8권4호
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• pp.207-213
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• 2006

The present study was conducted to investigate the effect of oolong tea extract on blood glucose level and antioxidant system in diabetic rats. The Sprague-Dawley rats were fed on AIN-76 based experimental diets containing 1 % oolong tea extract for 6 weeks. They were induced to be diabetic by receiving streptozotocin (45mg/kg BW) intramuscularly. Blood glucose, blood and hepatic concentration of vitamins A and E, and antioxidant enzyme activities were measured. Oolong tea extract feeding decreased the plasma glucose in diabetic rats. Dietary supplementation of oolong tea extract did not affect antioxidative enzyme activities such as superoxide dismutase, glutathione peroxidase and catalase in diabetic rats. The plasma level of retinol was increased in diabetic rats by feeding oolong tea extract. Plasma and hepatic levels of ${\alpha}$-tocopherol were higher in diabetic rats fed oolong tea extract. In conclusion, these results suggest that oolong tea extract consumption might reduce the plasma glucose in diabetic rats and protect the oxidative damage from diabetic stress to some extent.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.198-198
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• 2014

Plasma를 이용하는 대면적 디스플레이 공정에서 균일도는 매우 중요한 요소 중 하나이다. 이를 향상시키기 위하여 본 연구에서는 pulsed plasma를 이용하여 duty ratio를 조절함으로써 균일도를 향상시켰으며, plasma on/off time을 이용하여 electron temperature를 낮추어 plasma에 의한 damage를 감소시키려 하였다. 또한 optical emission spectroscopy(OES)를 이용하여 pulse condition에따라 변하는 ion species peak을 실시간으로 확인하였다.

• 한국표면공학회지
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• 제29권5호
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.337-337
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• 2011

Application of plasma technology on microbial sterilization has been frequently studied. In spite of accumulating number of studies, many have been focused on bacteria. Reports on eukaryotic yeasts and filamentous fungi are limited. In addition, mechanism of plasma effect still needs to be clarified. In this study, we analyzed the effect of non-thermal atmospheric pressure plasma on the budding yeast, Saccharomyces cerevisiae using DBD-type device. When yeast cells were exposed to plasma (at 2 mm distance) and then cultured on YPD-agar plate, number of cells survived (shown as colony) were reduced proportionally to exposure time. More than 50% reduction in number of colonies were observed after twice exposure of 5min. each. Colonies much smaller than those of control (no plasma exposure) were appeared after twice exposure of 5 min. each. It seems that small colonies are resulted from delayed cell growth due to the damage caused by plasma treatment. Microscopic analysis demonstrates that yeast cells treated with plasma for 5 min. twice have more rough and shrinked shape compared to oval shape with smooth surface of control.

• 전기학회논문지
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• 제65권12호
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• pp.1992-1999
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• 2016

The plasma process is applied to various industrial fields such as high-tech IT industry, textiles and medical. Therefore, there is increasing interest in the plasma power supply, and demand for power devices of high efficiency and high power density is increased. Plasma power supply for process must solve the arc problem, when the plasma is unstable. The output capacitor is closely related to the arc problem. If the output capacitor is smaller, the damage from the arc problem is reduced. However, the small value of the output capacitor affects the operating characteristics of the power supply. In this paper, a LLC resonant converter is adopted, because it can achieve high efficiency and power density in the plasma DC power supply. However, due to the small value of the output capacitor, the converter is operated as a LLCC resonant converter. Therefore, a gain characteristic of LLCC resonant converter is analyzed by using the FHA (First Harmonic Approximation) in plasma power supply. Simulation and experimental results are presented to verify the characteristic analysis of LLCC Resonant Converter.