• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.254-257
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• 2013

In-situ optical emission spectroscopy (OES) is employed for PECVD chamber monitoring. OES is used as an addon sensor to monitoring and cleaning end point detection (EPD). On monitoring plasma chemistry using OES, the process gas and by-product gas are simultaneously monitored. Principal component analysis (PCA) enhances the capability of end point detection using OES data. Through chamber cleaning monitoring using OES, cleaning time is reduced by 53%, in general. Therefore, the gas usage of fluorine is also reduced, so satisfying Green Fab challenge in semiconductor manufacturing.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.7-12
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• 1998

감광성 BCB를 사용한 MCM-D기판에 신뢰성있는 비아형성을 위하여 BCB의 공정 특성과 C2F6를 사용한 플라즈마 cleaning 영향을 분석하였다. 절연막, 금속배선재료로 각각 감광성 BCB, Cu를 사용하여 MCM-D 기판을 제작 분석한 결과 BCB는 soft bake 후 초기 두께의 50%정도 두께 손실이 있었으며 해상도는 15um이었다. BCB층에 비아 형성후 C2F6 가스로 플라즈마 cleaning 하고 AES로 비아표면을 분석한 결과 유기물 C는 검출되지 않은 반면 플라즈마 cleaning을 하지 않은 비아를 분석한 결과 유기물 성분의 C가 많이 검출되었 고 Ar 스퍼터에 의해서도 완전히 제거되지 않았다. 따라서 감광성 BCB를 절연막으로 사용 한 MCM-D 기판 제작공정에서 비아 형성후 C2F6를 이용한 플라즈마 cleaning의 필요성을 확인하였다.

• Laser Solutions
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• v.7 no.1
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• pp.29-36
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• 2004

The dynamics of laser-induced plasma/shock wave and the interaction with a surface in the laser shock cleaning process are analyzed by optical diagnostics. Shock wave is generated by a Q-switched Nd:YAG laser in air or with N$_2$, Ar, and He injection into the focal spot. The shock speed is measured by monitoring the photoacoustic probe-beam deflection signal under different conditions. In addition, nanosecond time-resolved images of shock wave propagation and interaction with the substrate are obtained by the laser-flash shadowgraphy. The results reveal the effect of various operation parameters of the laser shock cleaning process on shock wave intensity, energy-conversion efficiency, and flow characteristics. Discussions are made on the cleaning mechanisms based on the experimental observations.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.80-84
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• 2006

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

• Current Optics and Photonics
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• v.7 no.6
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• pp.714-720
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• 2023

Laser cleaning has the advantages of environmental protection, precision, and high efficiency, and has good prospects for application in removing oxide films on the surface of aluminum alloy. This paper discusses the cleaning threshold and cleaning mechanism of aluminum alloy surface oxide film. A nanosecond pulsed laser was used to remove a 5-㎛-thick oxide film from the surface of 7A04 aluminum alloy, and the target surface temperature and cleaning depth were simulated. The effects of different laser energy densities on the surface morphology of the aluminum alloy were analyzed, and the plasma motion process was recorded using a high-speed camera. The temperature measurement results of the experiment are close to the simulation results. The results show that the laser cleaning of aluminum alloy oxide film is mainly based on the vaporization mechanism and the shock wave generated by the explosion.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.378-383
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• 2001

An out line of the material process with using the atmospheric pressure glow plasma is described as follows : (1) TiO powder coating with SiO$_2$ (2) Surface treatment of Fluorinated polymers and (3) Surface cleaning of electronic circuit board with using splay type.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.361-366
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• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.3
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• pp.165-171
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• 2003

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.