• Applied Chemistry for Engineering
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• v.34 no.2
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• pp.170-174
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• 2023

CO₂ is known as one of the causes of global warming, and various studies are being conducted to capture it. In this study, a tetrafluoromethane (CF₄) plasma reaction was performed to improve the CO₂ adsorption of activated carbons (ACs) through changes in surface characteristics, and the adsorption characteristics according to the reaction time were considered. After the reaction, the micropore volume increased up to 1.03 cm³/g. In addition, as the reaction time increased, the fluorine content on the surface increased to 0.88%. It was possible to simultaneously control the pore properties and surface functional groups of the ACs through this experiment. Also, the CO₂ uptake of surface-treated ACs improved up to 7.44% compared to untreated ACs, showing the best performance at 3.90 mmol/g when the reaction time was 60 s. This is due to the synergy effect of the fluorine functional groups introduced on the surface of the ACs and the increased micropore volume caused by the etching effect. It was found that the micropore volume had a greater effect on CO₂ adsorption in the region where the CO₂ uptake was less than 3.67 mmol/g, while the added fluorine content had a greater effect in the region above that.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.701-706
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• 2008

Nano-sized nickel powders were prepared by evaporating the bulk nickel metarial using transferred arc thermal plasma. Nitrogen gases are easily dissociated to atomic nitrogen in thermal plasma and they are quickly dissolved in molten nickel. Super-saturated atomic nitrogen in molten nickel is recombined to nitrogen gas because of the relatively low temperature of nickel surface. Generally, the recombine reaction of atomic nitrogen is exothermic, so bulk nickel is quickly evaporated to nickel vapor due to the thermal energy of recombine reaction. The particle size of nickel powder was controlled by $N_2$ used as the diluting gas. It was observed that as the diluting gas flow rate was increase, the particle size was decreased and the particle size distribution was narrowed. The average particle size at 250 l/min of the diluting gas was 202 nm analyzed by means of the particle size analyzer (PSA).

• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.215-220
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• 1989

Silicon Nitride whose thickness is about $100\AA$by the ellipsometer was successfully formed by the Plasma reaction. Nitrogen Plasma was formed by applying the 200KHz, 500Watt power between the two electroes and nitridation of silicon was carried out directly on the top of the silicon wafer. Thus Silicon Nitride formed was oxidized to from oxynitrides and their electrical characterlstice were analyzed by measuring I-V curves and capacitances. Through ESCA depth profiles, the chemical composition changes before and after the oxidation wers analyzed.

• Clean Technology
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• v.17 no.3
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• pp.250-258
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• 2011

Thermal plasma has been presented for the decomposition of perfluorocompounds (PFCs) which are extensively used in the semiconductor manufacturing and display industry. We developed pilot-scale equipment to investigate the large scale treatment of PFCs and called it a "thermal plasma scrubber". PFCs such as $CF_4$, $C_2F_6$, $SF_6$, and $NF_3$ used in experiments were diluted with $N_2$. There were two different types of experiment setup related to the water spray direction inside the thermal plasma scrubber. The first type was that the water was sprayed directly into the gas outlet located at the exit of the reaction section. The second type was that the water was sprayed on the wall of the quenching section. More effective decomposition took place when the water was sprayed on the quenching section wall. For $C_2F_6$, $SF_6$, and $NF_3$ the maximum destruction and removal efficiency was nearly 100%, and for $CF_4$ was up to 93%.

• Journal of the Korean institute of surface engineering
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• v.29 no.1
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• pp.45-59
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• 1996

Ultrafine powders(UFPs) of aluminum nitride(AlN) have been synthesized by chemical reactions in the nitrogen atmosphere and the gaseous aluminum evaporated from Al powders in thermal plasmas produced by a DC plasma torch. A synthesis system consisting of a plasma torch, a finely-controllable powder feeder, a reaction chamber, and a quenching-collection chamber have been designed and manufactured, and a filter for gathering AlN UFPs produced by the quenching process subsequent to the synthesis is set up. The synthesis process is interpreted by numerical analyses of the plasma-particle interaction and the chemical equilibrium state, respectively, and a fully-saturated fractional factorial test is used to find the optimum process conditions. The degrees and ultrafineness of synthesis are evaluated by means of SEM, TEM, XRD, and ESCA analyses. AlN UFPs synthesized in the optimum process conditions have polygonal shapes of the size of 5-100 nm, and their purities differ depending on collecting positions and filter types, and the maximum purity obtained is 72 wt% at the filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.491-491
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• 2013

A novel plasma system has been developed for 3-dimensional modification of the carbon nano-powders. Improvement of dispersion of these nano materials are studied by plasma discharge, not using chemical modification. The plasma process is considered to great advantages over wet chemical process due to environmental, economic viewpoint, and uniformity over the treated volume. The uniform dispersion is a critical factor for these material's nano composite applications. Using this plasma system, graphene, carbon black, and CNT was treated and functionalized. Several key discharge conditions such as Ar/H2/O2 or Ar/H2/NH3 gas ratio, treatment time, power, feeder's vibration frequency are investigated. Hydrophobic of graphene has turned some more into hydrophilic by reaction test with water, electrophoresis, surface contact angle test, and turbidity analysis. The oxygen content ratio in the plasma treated CNT has increased about 3.7 times than the untreatedone. In the case of graphene and carbon black, the oxygen- and nitrogen- content has been enhanced average 10%. O-H (N-H) peak, C-O (C-N) peak, and C=O (C=N) peak data have been detected by FTIR measurement and intensified compared to before-plasma treatment due to O2 or NH3 content.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.343-347
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• 2012

The decomposition behaviors of gaseous cyanides in non-thermal plasma-catalyst hybrid reactor have been investigated with the variation of discharge power, influent concentration of cyanide, humidity of air carrier and packed materials in the reactor. Destruction of cyanides by plasma only process was very difficult compared to that of trichloroethylene. But the destruction efficiencies of cyanides were dramatically improved through packing alumina or Pt/alumina bead in the plasma discharge region. From the results, it could be assumed that thermal catalytic effect is involved simultaneously with plasma in the reaction of cyanides destruction on the alumina or Pt/alumina packed plasma reactor.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.595-598
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• 2009

The authors describe an analytical method to determine total chlorine in a sanitizer liquid, incorporating a lab-made He-rf-plasma within a PDMS polymer microchip. Helium was used instead of Ar to produce a plasma to achieve efficient Cl excitation. A quartz tube 1 mm i.d. was embedded in the central channel of the polymer microchip to protect it from damage. Rotational temperature of the He-microchip plasma was in the range 1350-3600 K, as estimated from the spectrum of the OH radical. Chlorine was generated in a volatilization reaction vessel containing potassium permanganate in combination of sulfuric acid and then introduced into the polymer microchip plasma (PMP). Atomic emission lines of Cl at 438.2 nm and 837.7 nm were used for analysis; no emission was observed for Ar plasma. The achieved limit of detection was 0.81 ${\mu}g\;mL^{-1}$ (rf powers of 30-70 W), which was sensitive enough to analyze sanitizers that typically contained 100-200 ${\mu}g\;mL^{-1}$ of free chlorine in chlorinated water. This study demonstrates the usefulness of the devised PMP system in the food sciences and related industries.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.