• 대한금속재료학회지
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• 제46권1호
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• 한국기계가공학회지
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• 제9권1호
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• pp.106-113
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• 2010

The most suitable condition for plasma source ion implantation(PSII) was found based on the study of the characteristics of PSIIed tool and machined surfaces. The depth analysis according to the chemical bonding state of elements and surface component elements through the XPS and SIMS, was conducted to find the improved property of the PSIIed surface. Due to the diffusion of PSII, the nitrogen was found up to a depth of about 150nm according to the supplied voltage and ion implanted time. The deep diffusion by nitrogen caused the surface modification, but the formation of oxide component was found due to the residual gas contamination on the surface. Statistical method of ANOVA was conducted to find the effects of spindle speed and feed rate in interaction for machined surface roughness with PSIIed tools. The surface modification was found largely occurred by the nitrogen implanted surface with 2 hours for 27kV, 35kV and 43kV.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.409-410
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.196-196
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• 1999

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1797-1799
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• 1998

Plasma source ion implantation(PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. A apparatus of 30kV PSII is established and plasma characteristics are diagnosed by using a Langmuir probe. A spherical target is immersed in argon plasma and biased negatively by a series of high voltage pulses. Sheath evolution is measured by using a Langmuir probe and compared with the result of computer simulations.

• 한국표면공학회지
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• 제29권6호
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• pp.880-883
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• 1996

Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.328-329
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• 2006

반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.

• 한국생산제조학회지
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• 제20권2호
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• pp.162-168
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• 2011

In this research, nitrogen plasma source ion implantation(PSII) of non-coated tungsten carbide endmill tools was conducted with low heat treatment for increasing wear resistance. After the low heat treatment of PSIIed tools to give a homogeneity of wear resistance, the surface modification of tools was analyzed by hardness test, surface roughness and cutting forces. As for the resultant cutting forces, low heat treatment in temperature of $400^{\circ}C$ and $500^{\circ}C$ is stable because of low cutting resistance. The 20-minutes heat treated tool at spindle speed 25000rpm has superiority of surface roughness, Ra of $0.420{\mu}m$ and was found to have good wear resistance. The higher hardness value was obtained by increasing temperature from $300^{\circ}C$ to $600^{\circ}C$ for PSIIed tools with low heat treatment. As the PSIIed tools under 10minutes at temperature of $600^{\circ}C$ have the highest hardness as Hv of 2349.8, It was analyzed that temperature processing give much influences on hardness.

• 한국기계가공학회지
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• 제21권5호
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• 한국진공학회지
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• 제15권3호
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• pp.246-258
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• 2006

음의 고전압의 인가에 따라 반응하는 동적 플라즈마를 부하로 갖는 PSII(plasma source ion implantation) 펄스 시스템을 분석하기 위한 회로 모델을 개발하였다. 플라즈마 내에 삽입된 평판 전극 앞에서의 플라즈마 쉬스의 움직임은 동적 차일드-랑뮤어 쉬스 모델을 따르는 것으로 가정하였다. 표적 전극에 흐르는 전류는 전극에 인가되는 전압과 서로 영향을 주며 변하므로 동적 플라즈마 부하를 전압 의존 전류 원으로 표현하여 자기모순이 없는 회로 모델을 구현하였다. 회로 해석은 Pspice 프로그램을 이용하여 수행하였으며, 다양한 플라즈마 조건과 펄스인가 조건에서의 실험 결과와 비교하여 회로 모델의 타당성을 검증하였다.