• 제목/요약/키워드: Plasma Parameter

검색결과 298건 처리시간 0.033초

Ar 가스 압력과 RF 전력변화에 따른 유도결합형ㆍ플라즈마 E-H모드 변환의 광학적 특성 (Optical E-H Transition Properties of Inductively Coupled Plasma with Ar Gas Pressure and RF Pourer)

  • 허인성;조주웅;이영환;김광수;최용성;박대희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권1호
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    • pp.20-23
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    • 2004
  • In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

Dry etching of ZnO thin film using a $CF_4$ mixed by Ar

  • Kim, Do-Young;Kim, Hyung-Jun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1504-1507
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    • 2009
  • In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

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플라즈마 파라메타와 자계의 상관관계에 관한 연구 (A study on the relationships between plasma parameters and magnetic field)

  • 김두환;장윤석;조정수;박정후
    • 대한전기학회논문지
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    • 제45권3호
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    • pp.426-431
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    • 1996
  • It is well known that the understanding of the complex mechanism of magnetoplasma is closely related with understanding of the collective behavior of discharge plasma parameters such as the cathode-sheath potential, cathode-sheath thickness, electron temperature, electron density, and ambipolar diffusion. In this paper, some of the relationships between these plasma parameters and magnetic field is investigated experimentally with a Langmuir probe in the magnetoplasma generated by D.C diode system. It is found that when magnetic field is increased, cathode-sheath potential, cathode-sheath thickness, and ambipolar diffusion are decreased. In addition, peak ion density obtained as a parameter of ionic signal voltage by Faraday cup method is independent of magnetic field. (author). 9 refs., 11 figs.,1 tab.

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Real-time In-situ Plasma Etch Process Monitoring for Sensor Based-Advanced Process Control

  • Ahn, Jong-Hwan;Gu, Ja-Myong;Han, Seung-Soo;Hong, Sang-Jeen
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권1호
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    • pp.1-5
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    • 2011
  • To enter next process control, numerous approaches, including run-to-run (R2R) process control and fault detection and classification (FDC) have been suggested in semiconductor manufacturing industry as a facilitation of advanced process control. This paper introduces a novel type of optical plasma process monitoring system, called plasma eyes chromatic system (PECSTM) and presents its potential for the purpose of fault detection. Qualitatively comparison of optically acquired signal levels vs. process parameter modifications are successfully demonstrated, and we expect that PECSTM signal can be a useful indication of onset of process change in real-time for advanced process control (APC).

헬리콘 플라즈마의 전기적 특성 (Electrical Characteristics of Helicon Wave plasmas)

  • 윤석민;김정형;서상훈;장흥영
    • 한국진공학회지
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    • 제5권1호
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    • pp.85-92
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    • 1996
  • The external electricla characteristics of helicon wave plasmas were measured over a wide range of RF power and magnetic filed. External parameters. such as antenna voltage , current, phase shift, and interanl parameter, electron density were measured at 7MHz, 1mTorr Ar discharge . The equivalent discharge resistance and reactance, and the power transfer efficiency were calculated through these measurements. There are a helicon mode which produces high density plasma by helicon wave and a lowmode which produces low density plasma by capaictive electric field. In case of the helicon mode, the anternna voltage and current were lower than those of the low-mode. The phase difference between voltage and current decreased suddenly at the transition point from the low-mode to the helicon mode. Equivalent resistance and power efficiency increased and reactance decreased suddenly at the transition point. These results mean that the power transperred to plasma and the nutual coupling between the antenna and plasma increase as the mode changes from the low-mode to the helicon mode.

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Current Status and Future Trends of Cold Atmospheric Plasma as an Oncotherapy

  • Xiaofeng Dai;Jiale Wu;Lianghui Lu;Yuyu Chen
    • Biomolecules & Therapeutics
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    • 제31권5호
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    • pp.496-514
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    • 2023
  • Cold atmospheric plasma (CAP), a redox modulation tool, is capable of inhibiting a wide spectrum of cancers and has thus been proposed as an emerging onco-therapy. However, with incremental successes consecutively reported on the anticancer efficacy of CAP, no consensus has been made on the types of tumours sensitive to CAP due to the different intrinsic characteristics of the cells and the heterogeneous design of CAP devices and their parameter configurations. These factors have substantially hindered the clinical use of CAP as an oncotherapy. It is thus imperative to clarify the tumour types responsive to CAP, the experimental models available for CAP-associated investigations, CAP administration strategies and the mechanisms by which CAP exerts its anticancer effects with the aim of identifying important yet less studied areas to accelerate the process of translating CAP into clinical use and fostering the field of plasma oncology.

중심합성설계와 반응표면분석법을 이용한 수처리용 산소-플라즈마와 공기-플라즈마 공정의 최적화 (Optimization of Air-plasma and Oxygen-plasma Process for Water Treatment Using Central Composite Design and Response Surface Methodology)

  • 김동석;박영식
    • 한국환경과학회지
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    • 제20권7호
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    • pp.907-917
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    • 2011
  • This study investigated the application of experimental design methodology to optimization of conditions of air-plasma and oxygen-plasma oxidation of N, N-Dimethyl-4-nitrosoaniline (RNO). The reactions of RNO degradation were described as a function of the parameters of voltage ($X_1$), gas flow rate ($X_2$) and initial RNO concentration ($X_3$) and modeled by the use of the central composite design. In pre-test, RNO degradation of the oxygen-plasma was higher than that of the air-plasma though low voltage and gas flow rate. The application of response surface methodology (RSM) yielded the following regression equation, which is an empirical relationship between the RNO removal efficiency and test variables in a coded unit: RNO removal efficiency (%) = $86.06\;+\;5.00X_1\;+\;14.19X_2\;-\;8.08X_3\;+\;3.63X_1X_2\;-\;7.66X_2^2$ (air-plasma); RNO removal efficiency (%) = $88.06\;+\;4.18X_1\;+\;2.25X_2\;-\;4.91X_3\;+\;2.35X_1X_3\;+\;2.66X_1^2\;+\;1.72X_3^2$ (oxygen-plasma). In analysis of the main effect, air flow rate and initial RNO concentration were most important factor on RNO degradation in air-plasma and oxygen-plasma, respectively. Optimized conditions under specified range were obtained for the highest desirability at voltage 152.37 V, 135.49 V voltage and 5.79 L/min, 2.82 L/min gas flow rate and 25.65 mg/L, 34.94 mg/L initial RNO concentration for air-plasma and oxygen-plasma, respectively.

Comparative simulation of microwave probes for plasma density measurement and its application

  • 김대웅;유신재;김시준;이장재;김광기;이영석;염희중;이바다;김정형;오왕열
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.185.2-185.2
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    • 2016
  • The plasma density is an essential plasma parameter describing plasma physics. Furthermore, it affects the throughput and uniformity of plasma processing (etching, deposition, ashing, etc). Therefore, a novel technique for plasma density measurement has been attracting considerable attention. Microwave probe is a promising diagnostic technique. Various type of cutoff, hairpin, impedance, transmission, and absorption probes have been developed and investigated. Recently, based on the basic type of probes, modified flat probe (curling and multipole probes), have been developing for in situ processing plasma monitoring. There is a need for comparative study between the probes. It can give some hints on choosing the reliable probe and application of the probes. In this presentation, we make attempt of numerical study of different kinds of microwave probes. Characteristics of frequency spectrum from probes were analyzed by using three-dimensional electromagnetic simulation. The plasma density, obtained from the spectrum, was compared with simulation input plasma density. The different microwave probe behavior with changes of plasma density, sheath and pressure were found. To confirm the result experimentally, we performed the comparative experiment between cutoff and hairpin probes. The sheath and collision effects are corrected for each probe. The results were reasonably interpreted based on the above simulation.

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Characteristics of the Plasma Source for Ground Ionosphere Simulation Surveyed by Disk-Type Langmuir Probe

  • Ryu, Kwangsun;Lee, Junchan;Kim, Songoo;Chung, Taejin;Shin, Goo-Hwan;Cha, Wonho;Min, Kyoungwook;Kim, Vitaly P.
    • Journal of Astronomy and Space Sciences
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    • 제34권4호
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    • pp.343-352
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    • 2017
  • A space plasma facility has been operated with a back-diffusion-type plasma source installed in a mid-sized vacuum chamber with a diameter of ~1.5 m located in Satellite Technology Research Center (SaTReC), Korea Advanced Institute of Science and Technology (KAIST). To generate plasma with a temperature and density similar to the ionospheric plasma, nickel wires coated with carbonate solution were used as filaments that emit thermal electrons, and the accelerated thermal electrons emitted from the heated wires collide with the neutral gas to form plasma inside the chamber. By using a disk-type Langmuir probe installed inside the vacuum chamber, the generation of plasma similar to the space environment was validated. The characteristics of the plasma according to the grid and plate anode voltages were investigated. The grid voltage of the plasma source is realized as a suitable parameter for manipulating the electron density, while the plate voltage is suitable for adjusting the electron temperature. A simple physical model based on the collision cross-section of electron impact on nitrogen molecule was established to explain the plasma generation mechanism.

Ar 가스 압력과 RF 전력에 따른 유도결합형 플라즈마의 전기적 및 광학적 특성 (Electrical and Optical Characteristics of Inductively Coupled Plasma by Ar Gas Pressure and Rf Power)

  • 최용성;허인성;이영환;박대희
    • 한국전기전자재료학회논문지
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    • 제17권5호
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    • pp.560-566
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    • 2004
  • In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100V∼+100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.