• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.145-145
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• 2011

Recently, multi-hole electrode RF capacitively coupled plasma discharge is being used in the deposition of microcrystalline silicon for thin film solar cell to increase the speed of deposition. To make efficient multi-hole electrode RF capacitively coupled plasma discharge, the hole diameter is to be designed concerning the plasma parameters. In past studies, the relationship between plasma parameters such as pressures and gas species, and hole diameter for efficient plasma density enhancement is experimentally shown. In the presentation, the relationship between plasma deriving frequency and hole diameter for efficient multi-hole electrode RF capacitively coupled plasma discharge is shown. In usual capacitively coupled plasma discharge, plasma parameter, such as plasma density, plasma impedence and plasma temperature, change as frequency increases. Because of the change, the optimum hole diameter of the multi-hole electrode RF capacitively coupled plasma for high density plasma is thought to be modified when the plasma deriving frequency changes. To see the frequency effect on the multi-hole RF capacitively coupled plasma is discharged and one of its electrode is changed from a plane electrode to a variety of multi-hole electrodes with different hole diameters. The discharge is derived by RF power source with various frequency and the plasma parameter is measured with RF compensated single Langmuir probe. The shrinkage of the hole diameter for efficient discharge is observed as the plasma deriving frequency increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.230-230
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• 2013

플라즈마를 활용한 미세 패턴의 건식 식각은 반도체 소자 공정에 있어서 가장 중요한 기술 중 하나이다. 한편, 매년 발행되는 ITRS Roadmap 에 따르면 DRAM 의 1/2 pitch 는 감소하는 동시에 Contact A/R (Aspect Ratio) 는 증가하고 있다. 이러한 추세 속에서 기존의 공정을 그대로 활용할 경우 식각물의 프로파일 왜곡 혹은 휨 현상이 발생하고 식각 속도가 저하되며 이러한 특성들이 결과적으로는 생산성의 저하로 이어질 수 있다. 이러한 현상을 최소화하기 위해서는 무엇보다 독립된 plasma parameter 들이 식각물의 프로파일 혹은 식각 속도 등에 어떠한 영향을 주는 지에 대한 학문적 이해가 필요하다. 본 논문에서는 최소 CD (Critical Dimenstion) 100nm, 최대 A/R 30 인 HARC (High Aspect Ration Contact hole) 의 식각 특성이 plasma parameter 에 따라 어떻게 변하는지 확인해 보고자 한다. 산화물의 식각은 대표적인 high density plasma source 중의 하나인 ICP에서 진행하였으며 기존에 알려진 plasma parameter 에 더하여 자장의 인가가 산화물의 식각 특성에 어떠한 영향을 주는지 살펴보고자 전자석을 ICP 에 추가로 설치하여 실험을 진행하였다. 결과적으로, plasma parameter 에 따른 혹은 자장의 세기 변화에 따른 산화물의 식각 실험을 플라즈마 진단 실험과 병행하여 진행함으로써 다양한 인자에 따른 산화물의 식각 메커니즘을 정확하게 이해하고자 하였다. 실험 내용을 요약하면 다음과 같다. 먼저, 전자석의 전류 인가 조건에 따라 축 방향 혹은 반경 방향으로의 자장의 분포가 달라질 수 있음을 확인하였고 플라즈마 진단 결과 축 방향 혹은 반경 방향으로의 자장이 증가하였을 때 고밀도의 플라즈마가 형성될 수 있음은 물론 반경 방향으로의 플라즈마 밀도의 균일도가 향상됨을 확인할 수 있었다. 또한 ICP 조건에서 바이어스 주파수, 압력, 바이어스 파워, 소스 파워, 가스 유량 등의 plasma parameter 가 산화물의 식각 특성에 미치는 영향 및 메커니즘을 규명하였고 이 과정을 통해 최적화된 프로파일을 바탕으로 축 방향 혹은 반경 방향으로 증가하는 자장을 인가하였을 때 (M-ICP 혹은 자화 유도 결합 플라즈마) ICP 대비 산화물의 식각 속도가 증가함은 물론 PR-to-oxide 의 선택비가 개선될 수 있음을 확인할 수 있었다. 자장의 인가에 따른 산화물의 정확한 식각 메커니즘은 향후의 실험 진행을 통해 이해하고 이를 통해 궁극적으로는 산화물의 식각 공정이 나아가야 할 올바른 방향을 제시하고자 한다.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.506-511
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• 1996

This paper deals with an inexpensive, simple and fast Langmuir probe sweeping circuit and its application. This sweeper completes a probe trace in a 1 ms order. Futhermore, the circuit drives a maximum probe voltage of $\pm$30V and has a maximum probe current capability of a few amperes. The plasma parameters are successfully determined using the fast Langmuir probe method.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2708-2715
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• 2021

The Multi-Purpose Overload Robot (CMOR) is a key subsystem of China Fusion Engineering Test Reactor (CFETR) remote handling system. Due to the long cantilever and large loads of the CMOR, it has a large rigid-flexible coupling deformation that results in a poor position accuracy of the end-effector. In this study, based on the Levenberg-Marquardt algorithm, the spatial grid, and the linearized variable load principle, a variable parameter compensation model was designed to identify the parameters of the CMOR's kinematics models under different loads and at different poses so as to improve the trajectory tracking accuracy. Finally, through Adams-MATLAB/Simulink, the trajectory tracking accuracy of the CMOR's rigid-flexible coupling model was analyzed, and the end position error exceeded 0.1 m. After the variable parameter compensation model, the average position error of the end-effector became less than 0.02 m, which provides a reference for CMOR error compensation.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.809-812
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• 2008

Structural parameter variation effects (changing the coplanar gap under different discharge dimensions) and use of complex gas mixtures (He, Ne, Ar and Xe) in mercury-free fluorescent lamps are studied in this paper. Pure Neon gas is the best buffer gas for obtaining high luminous efficiency in mercury-free fluorescent lamps. It is shown that with a shorter coplanar gap (30mm), a high luminous efficiency can be obtained at low operating voltage, as well as high luminance uniformity and stable discharge with a Ne-Xe 20% gas mixture.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.460-460
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• 2012

반도체 Device가 Shrink 함에 따라 Pattern Size가 작아지게 되고, 이로 인해 Photo Resist 물질 자체만으로는 원하는 Patterning 물질들을 Plasma Etching 하기가 어려워지고 있다. 이로 인해 Photoresist를 대체할 Hard Mask 개념이 도입되었으며, 이 Hardmask Layer 중 Amorphous Carbon Layer 가 가장 널리 사용되고 지고 있다. 이 Amorphous Carbon 계열의 Hardmask를 Etching 하기 위해서 기본적으로 O2 Plasma가 사용되는데, 이 O2 Plasma 내의 Oxygen Species들이 가지는 등 방성 Diffusion 특성으로 인해, 원하고자 하는 미세 Pattern의 Vertical Profile을 얻는데 많은 어려움이 있어왔다. 이를 Control 하기 인해 O2 Plasma Parameter들의 변화 및 Source/Bias Power 등의 변수가 연구되어 왔으며, 이와 다른 접근으로, N2 및 CO, CO2, SO2 등의 여러 Additive Gas 들의 첨가를 통해 미세 Pattern의 Profile을 개선하고, Plasma Etching 특성을 개선하는 연구가 같이 진행되어져 왔다. 본 논문에서 VLSI Device의 Masking Layer로 사용되는, Carbon 계 유기 층의 Plasma 식각 특성에 대한 연구를 진행하였다. Plasma Etchant로 사용되는 O2 Plasma에 새로운 첨가제 가스인 카르보닐 황화물 (COS) Gas를 추가하였을 시 나타나는 Plasma 내의 변화를 Plasma Parameter 및 IR 및 XPS, OES 분석을 통하여 규명하고, 이로 인한 Etch Rate 및 Plasma Potential에 대해 비교 분석하였다. COS Gas를 정량적으로 추가할 시, Plasma의 변화 및 이로 인해 얻어지는 Pattern에서의 Etchant Species들의 변화를 통해 Profile의 변화를 Mechanism 적으로 규명할 수 있었으며, 이로 인해 기존의 O2 Plasma를 통해 얻어진 Vertical Profile 대비, COS Additive Gas를 추가하였을 경우, Pattern Profile 변화가 개선됨을 최종적으로 확인 할 수 있었다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.62 no.1
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• pp.18-22
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• 2013

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. Using quantitative simulations of weakly ionized plasma, we can analyze gas characteristic. In this paper, the electron transport characteristic in $CH_4$ has been analysed over the E/N range 0.1~300[Td], at the 300[$_{\circ}\;K$] by the two term approximation Boltzmann equation method and Monte Carlo Simulation. Boltzmann equation method has also been used to predict swarm parameter using the same cross sections as input. The behavior of electron has been calculated to give swarm parameter for the electron energy distribution function has been analysed in $CH_4$ at E/N=10, 100 for a case of the equilibrium region in the mean energy. A set of electron collision cross section has been assembled and used in Monte Carlo simulation to predict values of swarm parameters. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.317-321
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• 2014

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. Using quantitative simulations of weakly ionized plasma, we can analyze gas characteristic. In this paper, the electron Ionization and diffusion Coefficients in $CH_4$ has been analysed over the E/N range 0.1~300[Td], at the 300[$^{\circ}K$] by the two term approximation Boltzmann equation method and Monte Carlo Simulation. Boltzmann equation method has also been used to predict swarm parameter using the same cross sections as input. The behavior of electron has been calculated to give swarm parameter for the electron energy distribution function has been analysed in $CH_4$ at E/N=10, 100 for a case of the equilibrium region in the mean energy. A set of electron collision cross section has been assembled and used in Monte Carlo simulation to predict values of swarm parameters. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.43-46
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• 2004

This paper describes the information for quantitative simulation of weal이y ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. Using quantitative simulations of weakly ionized plasma, we can analyze gas characteristic. In this paper, the electron transport characteristic in $CH_4$ has been analysed over the E/N range 0.1~300[Td], at the $300[_{\circ}K]$ by the two tenn approximation Boltzmann equation method and Monte Carlo Simulation. Boltzmann equation method has also been used to predict swarm parameter using the same cross sections as input. The behavior of electron has been calculated to give swarm parameter for the electron energy distribution function has been analysed in $CH_4$ at E/N=10, 100 for a case of the equilibrium region in the mean energy. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.