• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.203-203
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2010년도 춘계학술발표대회
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• pp.1062-1065
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• 2010

Plasma 물성 데이터는 Plasma내에서 일어나는 입자(전자, 원자, 이온, 분자 등)들의 충돌에 대한 데이터로써 Plasma 발생 장치 설계 및 제어의 핵심 요소이며, Plasma 공정조건 확립을 위한 필수 정보가 된다. 참조표준은 과학기술데이터나 정보에 대하여 정확도와 신뢰도에 대한 분석 및 평가가 이루어진 공인데이터를 말한다. 이러한 플라즈마 물성 정보를 체계적으로 관리하고 신뢰성 있는 데이터를 필요로 하는 산업체에 지원하기 위하여 특정 참조표준과 참조데이터로 제정, 보급하는 Plasma 물성 참조표준 수집평가 시스템이 필요하고, 이에 대한 설계가 필요하다.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.551-552
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• 2006

Plasma-induced charging damage was been measured during TaN gate electrode of MISFET(TaN/$HfO_2$/Si) or interconnection metal etching step using large antenna structures. The results of these experiments were obtained that $HfO_2$ gate dielectric layer was affected about plasma charging effects and damage increased with F-N tunneling. Therefore, the etching conditions should be optimized to avoid the defects caused by plasma charging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.930-933
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• 2000

To understand the behavior of electron, ions and radicals on radio-frequency non-equilibrium plasma, it is necessary to know the basic information about its fundamental properties and reactions. Especially, the transient response of radio-frequency plasma has an important means of controlling selective etch rates and investigating the stability of a plasma chemical process. In this paper, we present the results of periodic steady-state behavior and transient behavior carbon Tetrafluoride(CF$_4$) discharge at 0.2 Torr in a 2 cm gap parallel-plate. After the number densities of charged particles became steady-state, the applied voltage was increased or decreased in an instant and the transient behavior of charged particles and radicals was investigated from one steady-state to the next steady state.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.88-88
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• 2007

• Applied Science and Convergence Technology
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• 제27권1호
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• pp.5-8
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• 2018

In this paper, plasma treatment effects on a ploy(dimethyl siloxane) substrate were analyzed for the applications of stretchable silver nanowire (Ag NWs) electrodes. The oxygen plasma treated sample shows the best performance compared to nitrogen treated and untreated samples. The lowest sheet resistance and reasonable stretching capability was achieved up to 20% strain condition without open circuit fail for the oxygen plasma treated sample.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2022년도 춘계학술대회
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• pp.27-30
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• 2022

기존의 공정방식에 비해 효율성이나 환경적 면에서 많은 장점을 가진 플라즈마 공정은 반도체 제작에서 널리 사용되고 있다. Plasma Sheath란 플라즈마 bulk와 그 것을 둘러싸고 있는 챔버 벽면과 전극 사이에서 관찰되는 어두운 영역으로 양이온과 전자의 이동속도 차이로 인해 발생한다. Plasma Sheath Monitoring Sensor (PSMS)는 플라즈마와 전극 사이의 전압(Voltage) 차이와 전극에 걸리는 RF power 등을 실시간으로 측정하는 센서로서 플라즈마 챔버 내에서 플라즈마의 상태와 매우 상관도가 높을 것으로 기대된다. 본 연구에서는 PSMS 데이터를 활용하여 플라즈마 챔버 내의 질소이온의 상태를 예측하는 모형을 딥러닝 기계학습 기법을 이용하여 구축하였다. 연구에 사용된 데이터는 파워와 압력을 달리 셋팅한 실험에서 측정된 PSMS 데이터를 학습데이터로 활용하고 플라즈마 bulk와 Si substrate에서 측정된 질소 이온의 비율, 플럭스, 밀도를 레이블로 활용하였다. 본 연구의 결과는 향후 플라즈마 공정의 최적화 및 실시간 정밀제어를 위한 인공지능 기술의 기초가 될 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.473-473
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• 2010

Plasma is widely used in various commercial etchers and chemical vapor deposition. Unfortunately, real-time plasma process monitoring is still difficult. Some methods of plasma diagnosis is improved, however, it is possible for real-time plasma diagnosis to use non-intrusive probe only. In this research, the object is to investigate the suitability of using impedance analysis and optical emission spectroscopy (OES) for real-time plasma process monitoring. It is assumed that plasma system is a equivalent circuit. Therefore, V-I probe is used for measuring impedance, which can be a new non-intrusive probe for plasma diagnosis. From impedance data, we tried to analyse physical properties of plasma. And OES, the other method of plasma diagnosis, is a typical non-intrusive probe for analyzing chemical properties. The amount of the OES data is typically large, so this poses a difficulty in extracting relevant information. To solve this problem, principal component analysis (PCA) can be used. For fundamental information, Ar plasma and $O_2$ plasma are used in this experiment. This method can be applied to real-time endpoint and fault detections.