• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• Tribology and Lubricants
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• v.16 no.3
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• pp.188-193
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• 2000

An experimental study was performed to discover the effect of environment on the tribological behavior of Si-incorporated diamond-like carbon(Si-DLC) film slid on a steel ball. The films were deposited on Si(100) wafers by a radio-frequency glow discharge of mixtures of benzene and dilute silane gases. Experiments using a ball-on-disk test-rig was performed in vacuum, dry air and ambient air conditions. It was observed that coefficient of friction decreased as the environment changed from vacuum, to dry air. Chemical analyses of debris suggested that low and stable friction is closely related to the formation of silicon-rich oxide debris and the rolling action.

• Journal of The Korean Astronomical Society
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• v.9 no.1
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• pp.1-6
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• 1976

The translational and reactive parts of thermal conductivity of a partially ionized solar magneto-plasma gas have been calculated based on Yun and Wyller's formulation (1972) along with Devoto's theory(1968). The computed results are presented as functions of temperature and pressure for given magnetic field strengths. The results of the calculations show that for most photospheric conditions the magnetic field does not play any important role in characterizing thermal properties of the ionized gas. However, when the gas pressure is low(e.g., P<10 dynes/$cm^2)$) the field becomes extremely effective even if its strength is quite small (e.g., B<0.1 gauss). The reactive part of the thermal transport is found to be very important when the gas is undertaking active ionization.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.1
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• pp.142-149
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• 1997

Ceramic-coated anilox roll for printing is resistant to corrosion and wear, and hence has enhanced life and quality. Laser engraving is used typically for machining holes to store ink in this roll. Since engraved hole size and shape are directly related to laser processing parameters, it is necessary to know the rela- tionships among these parameters. In this study, the parameters for engraving of ;oasma sprayed ceramic coatings with Nd:YAG laser were studied. Relationships between hole shape and processing parameters were analyzed. Cr$_{2}$O$_{3}$ceramic was found to be most suitable for Nd:YAG laser engraving. It was found that hole depth can be increased by using higher energy pulses. Effect of using different assistant gases was small to the final results. For better results, it was suggested to use a very stable laser with shorter pulses and higher pulse energy.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.588-596
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• 2006

The surface of polystyrene membrane treated by Ar, $O_2$ plasma, and the effects were observed before and after the treatment and permeability of $CO_2$, $N_2$ and selectivity of $CO_2$ relative to $N_2$ was measured using continuous flow gas permeation analyzer (GPA). The mole ratio of O over C in the surface was increased from 0 to 0.179 with Ar plasma treatment and route mean square of surface was increased from $15.86{\AA}$ to $71.64{\AA}$. Therefore the contact angle was decreased from $89.16^{\circ}$ to $18.1^{\circ}$. Thus Plasma treatments made surface of membrane tend to be highly hydrophilic. The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of Ar (60 W, 2 min, $70^{\circ}C$) plasma treatment was $1.14{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 4.22. In the case of $O_2$ plasma treatment, the contact angle was decreased at $13.56^{\circ}$ with increase of O/C ratio ($0.189{\AA}$) and route mean square of surface ($57.10{\AA}$). The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of $O_2$ (90 W, 2 min, $70^{\circ}C$) plasma treatment was $7.1{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 11.5. After plasma treatment, the changes of membrane surface were all subtly linked with both cross-linking and etching effects. Finally, it was confirmed that the gas permeation capacity and selectivity of the modified membrane with plasma could be improved by an appropriate control of the plasma conditions such as treatment time, the power input and sort of plasma gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.83-87
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• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• Journal of Korean Society for Atmospheric Environment
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• v.27 no.4
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• pp.387-394
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• 2011

A study on the removal of sulfur dioxide and nitrogen oxide was carried out using a non-thermal nano-pulse corona discharger at different gas temperatures. Pulse voltage with a high voltage of 50 kV, a pulse rising time of about 100 ns, a full width at half maximum of about 500 ns and a frequency of 1 kHz was applied to a wire-cylinder corona reactor. Ammonia and propylene gases were added into the corona reactor as additives with a static mixer. Ammonia addition had less effect on $SO_2$ reduction at the higher temperature because of the retardation of ammonium sulfate formation. However, propylene addition enhanced NO reduction at higher temperature due to increased gas mixture. $SO_2$ was further removed at the mixed $SO_2$ and NO gas due to increased $NO_2$ by the conversion of NO. The addition of ammonia and propylene gases was more highly dominant for the removal of sulfur dioxide compared to the sole pulse corona without the additives. However, the specific energy density per unit concentration of pulse corona as well as propylene additive was an important factor to remove NO gas. Therefore, the specific energy density per unit concentration of 0.04 Wh/($m^3{\cdot}ppm$) was necessary for the NO removal of more than 80% with the concentration ratio of 2.0 for propylene and NO. Hydrogen peroxide was another alternative additive to remove both $SO_2$ and NO in the nano-pulse corona discharger.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.364-371
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• 1997

Silicon trench etching has been carried out using a magnetically enhanced reactive ion etching system in HBr plasma containing He-$O_2$, $CF_4$. The changes of etch rate and etch profile, the degree of residue formation, and the change of surface chemical state were investigated as a function of additive gas flow rate. A severe lateral etching was observed when pure HBr plasma was used to etch the silicon, resulted in a pot shaped trench. When He-$O_2$, $SiF_4$ additives were added to HBr plasma, the lateral etching was almost eliminated and a better trench etch profile was obtained. The surface etched in HBr/He-$O_2/SiF_4$ plasma showed relatively low contamination and residue elements compared to the surface etched in HBr/He-$O-2/CF_4$plasma. In addition, the etching characteristics including low residue formation and chemically clean etched surface were obtained by using HBr containing He-$O_2$ or $SiF_4$ additive gases instead of $CF_4$ gas, which were confirmed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Journal of Korean Society of Environmental Engineers
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• v.37 no.8
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• pp.492-497
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• 2015

VOCs (Volatile Organic Compounds) are generally generated in the painting process, or at the company and laundry where use organic solvents. The VOCs consist of various hydrocarbons and has low calorific value due to its dilution with atmospheric air. Therefore, the VOCs are difficult to burn by a conventional fuel combustor. In this study, a novel plasma dump combustor was proposed for the treatment of low calorific VOC gases. This combustor was designed a combination of the characteristics in a plasma burner, a dump combustor and a 3D matrix burner. The combustor has good structure for maintaining enough residence time and reaction temperature for stable flame formation and VOC destruction. For investigating the performance characteristics of the plasma dump combustor, an experiment was achieved for VOC feed rate, VOC injector position, etc. Toluene was used as a surrogate of VOC. The novel combustor gave better performance than a conventional combustor, showing that VOC destruction rate and energy efficiency were 89.64% and 12.27 kg/kWh respectively, at feeding rate of 450 L/min of VOC of 3,000 ppm of toluene concentration.

• Journal of Periodontal and Implant Science
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• v.51 no.3
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• pp.213-223
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• 2021

Purpose: The atmospheric pressure plasma jet (APPJ) has been introduced as an effective disinfection method for titanium surfaces due to their massive radical generation at low temperatures. Helium (He) has been widely applied as a discharge gas in APPJ due to its bactericidal effects and was proven to be effective in our previous study. This study aimed to evaluate the safety and effects of He-APPJ application at both the cell and tissue levels. Methods: Cellular-level responses were examined using human gingival fibroblasts and osteoblasts (MC3T3-E1 cells). He-APPJ was administered to the cells in the experimental group, while the control group received only He-gas treatment. Immediate cell responses and recovery after He-APPJ treatment were examined in both cell groups. The effect of He-APPJ on osteogenic differentiation was evaluated via an alkaline phosphatase activity assay. In vivo, He-APPJ treatment was administered to rat calvarial bone and the adjacent periosteum, and samples were harvested for histological examination. Results: He-APPJ treatment for 5 minutes induced irreversible effects in both human gingival fibroblasts and osteoblasts in vitro. Immediate cell detachment of human gingival fibroblasts and osteoblasts was shown regardless of treatment time. However, the detached areas in the groups treated for 1 or 3 minutes were completely repopulated within 7 days. Alkaline phosphatase activity was not influenced by 1 or 3 minutes of plasma treatment, but was significantly lower in the 5 minute-treated group (P=0.002). In vivo, He-APPJ treatment was administered to rat calvaria and periosteum for 1 or 3 minutes. No pathogenic changes occurred at 7 days after He-APPJ treatment in the He-APPJ-treated group compared to the control group (He gas only). Conclusions: Direct He-APPJ treatment for up to 3 minutes showed no harmful effects at either the cell or tissue level.