• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.32-37
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• 2022

As semiconductors become finer, equipment must perform precise and accurate processes to achieve the desired wafer fabrication requirement. Radio frequency power delivery system in plasma system plays a critical role to generate the plasma, and the role of impedance matching unit is critical to terminate the reflected radio frequency power by modifying the impedance of the matching network in the plasma equipment. Impedance matching unit contains one fixed inductor and two variable vacuum capacitors whose positions are controlled two step motors. Controlling the amount of vacuum variable capacitor should be made as soon as possible when the mismatched impedance is detected. In this paper, we present the impedance matching algorithm using the phase sensor.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.161-166
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• 2021

Errors in the semiconductor process are generated by a change in the state of the equipment, and errors usually arise when the state of the equipment changes or when parts that make up the equipment have flaws. In this investigation, we anticipated that aging of the mass flow controller in the plasma enhanced chemical vapor deposition SiO2 thin film deposition method caused a minute flow rate shift. In seven cases, fourier transformation infrared film quality analysis of the deposited thin film was used to characterize normal and pathological processes. The plasma condition was monitored using optical emission spectrometry data as the flow rate changed during the procedure. Preprocessing was used to apply the collected OES data to the artificial immune system algorithm, which was then used to process diagnosis. Through comparisons between datasets, the learning algorithm compared classification accuracy and improved the method. It has been confirmed that data characterized as a normal process and abnormal processes with differing flow rates may be discriminated by themselves using the artificial immune system data mining method.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.102-104
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• 2006

Auto-Correlated time series (ATS) model was constructed by using the backpropagation neural network. The performance of ATS model was evaluated with sensor information collected from a large volume, industrial plasma-enhanced chemical vapor deposition system. A total of 18 sensor information were collected. The effect of inclusion of past and future information were examined. For all but three sensor information with a large data variance demonstrated a prediction error less than 4%. By integrating ATS model into equipment software, process quality can be more stringently monitored while improving device throughput.

• Textile Coloration and Finishing
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• v.19 no.4
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• pp.38-46
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• 2007

Surface properties of the plasma treated fabric were changed while maintaining its bulk properties. Surface of plasma treated fabric take charge of enhanced adhesion by surface etching, surface activity. The water repellency coating Poly(Ethylene Terephthalate) fabric was treated with atmospheric pressure plasma using various parameters such as Argon gas, treatment time, processing power. Morphological changes by atmospheric pressure plasma treatment were observed using field emmission scanning electron microscopy(FE-SEM) and the zeta-potential measurement, contact angle measurement equipment. At the atmospheric pressure plasma treatment time of 150 sec, the power of 800W, the best wettability and peel strength were obtained. And we confirmed the possibility of industrial application by using atmospheric plasma system.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.11-17
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• 2004

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.206-213
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• 2003

Effects of plasma nitriding on the surface characteristics of tool steels have been investigated using wear tester, micro-hardness tester and scanning electron microscope (SEM) Commercial SKD 11 and SM45 alloy were used as specimens and were plasma nitrided using a plasma nitriding equipment for 5 hr and 10hr at $500^{\circ}C$. Microstructure and phase analysis were performed using SEM and XRD. It was found that plasma nitriding for lour at $500^{\circ}C$, compared with plasma nitriding for 10hr at $500^{\circ}C$, had a thick nitrided layer and produced a layer with good wear resistance and hardness as nitriding time increased. SKD11 alloy showed that wear resistance and hardness decreased, whereas surface roughness increased, compared with SM45 alloy.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2008.05a
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• pp.31-38
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• 2008

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2008.05a
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• pp.41-41
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• 2008