• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.191-195
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• 2003

The formation degree of sustain (ITO pattern) decides quality of PDP (plasma display panel). For this reason. it makes efforts in search defects more than 30 ${\mu}{\textrm}{m}$. Now, the existing inspection process is dependent upon naked eye or SEM equipment in off-line PDP manufacturing process. In this study developed prototype inspection system of PDP ITO glass. This system creates information that detects and sorts kind of defect automatically. Design ed inspection technology adopts line-scan method by slip-beam formation for the minimum of inspection time and image processing algorithm is embodied in detection ability of developed system. Designed algorithm had to make good use of kernel matrix which draws up an approach to geometry. A characteristic of area-shaped defects, as pin hole, substance, protrusion et al, are extracted from blob analysis method. Defects, as open, short, spots, et al, are distinguished by line type inspection algorithm. In experiment results, we could have ensured ability of inspection that can be detected with reliability of up to 95% in about 60 seconds

• 대한기계학회논문집B
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• 제38권5호
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• pp.407-412
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• 2014

가스하이드레이트 원리를 이용한 신개념의 해수담수화 장치를 제안하였다. 본 연구의 연속식 장치는 하이드레이트를 제조하고, 듀얼실린더의 압축공정에 의해 해수로부터 순수의 하이드레이트 펠릿화가 가능하다. 해수 샘플로부터 용존된 각 이온들의 제거 효율이 유도결합플라즈마분광광도계(ICP-AES)와 이온크로마토그래피(IC)에 의해 분석되었다. 본 연구에서 제안된 방법과 장치를 이용한 해수담수화시 형성된 하이드레이트 결정과 고농도의 염농축액과의 분리에 어려움이 있지만, 이를 해결함으로 좀더 효율적인 해수담수화 공정 적용이 가능할 것으로 판단된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1488-1490
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• 2008

The gyroscope is the sensor for detecting the rotation in inertial reference frame and constitute the navigation system together an accelerometer. As the inertial reference equipment for attitude determination and control in the satellite, the mechanical gyroscope has been used but it bring the disturbance for mass unbalance so the disturbance give a bad influence to the observation satellite mission because the mechanical gyroscope has the rotation parts. During the launch, The mechanical gyroscope is weak in vibration, shock and has the defect of narrow operating temperature range so it need the special design in integration. Recently the low orbit observation satellite for seeking the high pointing accuracy of image camera payload accept the FOG(Fiber Optic Gyro) or RLG(Ring Laser Gyro) for the attitude determination and control. The Ring Laser Gyro makes use of the Sanac effect within a resonant ring cavity of a He-Ne laser and has more accuracy than the other gyros. It need the 1000V DC to create the He-Ne plasma in discharge tube. In this paper, the design process of the High Voltage Power Supply for RLG(Ring Laser Gyroscope) is described. The specification for High Voltage Power Supply(HVPS) is proposed. Also, The analysis of flyback converter topology is explained. The Design for the HVPS is composed of the inverter circuit, feedback control circuit, high frequency switching transformer design and voltage doubler circuit.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• 한국분말재료학회지
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• 제28권5호
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• pp.403-409
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• 2021

In this study, Ti-Mo-EB composites are prepared by ball milling and spark plasma sintering (SPS) to obtain a low elastic modulus and high strength and to evaluate the microstructure and mechanical properties as a function of the process conditions. As the milling time and sintering temperature increased, Mo, as a β-Ti stabilizing element, diffused, and the microstructure of β-Ti increased. In addition, the size of the observed phase was small, so the modulus and hardness of α-Ti and β-Ti were measured using nanoindentation equipment. In both phases, as the milling time and sintering temperature increased, the modulus of elasticity decreased, and the hardness increased. After 12 h of milling, the specimen sintered at 1000℃ showed the lowest values of modulus of elasticity of 117.52 and 101.46 GPa for α-Ti and β-Ti, respectively, confirming that the values are lower compared to the that in previously reported studies.

• Medical Lasers
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• 제10권3호
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• pp.176-180
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• 2021

Several methods have been used to treat androgenetic hair loss, ranging from hair transplants to finasteride and minoxidil. Sometimes platelet-rich plasma injection therapy may be used to increase the satisfaction of patients who come to the hospital. However, some patients are sensitive to pain and are subjected to the inconvenience of requiring treatment after each blood sampling. The author had reported the effects of using a hair growth-promoting solution and Jetpeel^TM in parallel with a painless hair loss treatment method. However, the author was interested in more effective methods for patients with M-shaped or vertex hair loss who do not want to take medications or undergo hair transplant. In addition to the existing light-emitting diode therapy and electromagnetic field treatment, the author has made considered attempts to use various laser wavelength bands. However, the equipment for these methods can be expensive and are not suitable for patients who emphasize on cost-effectiveness. Therefore, the author used an existing reported method and a device based on the fractional erbium:YAG laser to provide the hair growth-promoting solution in parallel. The author chose a fractional 2940 nm-based laser device as a medium that could efficiently increase the growth phase, reduce the catagen phase, and facilitate intradermal product and drug delivery. As a result, there was a therapeutic benefit without any significant side effects such as redness and itching. Among the patients, the author reported the effects of the treatment on one patient with frontal M-shaped, mid, and vertex hair loss.

• 대한환경공학회지
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• 제27권8호
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• pp.859-869
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• 2005

소각장 off gas에 장기간 노출이 되어 활성이 저하된 상용 $V_2O_5-WO_3/TiO_2$ aged 촉매를 물리화학적 방법으로 재생 처리를 수행한 후, 재생 처리에 따른 촉매의 물성 변화를 확인하고 이에 따른 촉매 활성변화를 고찰하였다. 촉매의 특성분석은 XRD(x-ray diffractometer), BET, POROSIMETER, EDX(energy dispersive x-ray spectrometer), ICP(inductively coupled plasma), TGA(thermogravimetric Analyze,), SEM(scanning electron microscopy)등을 이용하여 수행하였고 NOx 전환반응실험은 소각장 off gas를 모사하여 $NH_3$에 의한 SCR 반응을 통해 수행하였다. 본 연구에서 수행된 재생처리 방법 중, 열처리 방법으로 재생처리를 수행 할 경우 fresh 촉매환성의 95% 이상을 회복하였으며, 화학적 재생 처리 방법으로는 산성용액의 경우는 pH가 5인 용액으로 재생 처리된 촉매가, 염기성 용액의 경우는 pH가 12인 용액으로 재생 처리된 촉매가 fresh 촉매활성의 90% 이상의 촉매 활성을 회복 하였다. 촉매 특성 분석 결과, 상기와 같은 방법으로 재생 처리된 촉매의 경우 비표면적은 fresh 촉매의 $85{\sim}95%$ 수준으로 회복 되었으며, aged 촉매 표면에 축적되어 있던 촉매 비활성 물질로 잘 알려진 황(S)이나 칼슘(Ca)등은 최대 99%이상 제거 되었다. Aged 촉매 표면상의 인(P), 크롬(Cr), 아연(Zn) 등과 같은 중금속의 경우는 최대 95% 이상 제거 되었으나 납(Pb)의 경우는 제거율이 $10{\sim}30%$ 수준으로 매우 미흡한 것으로 나타났다.

• 한국산학기술학회논문지
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• 제9권2호
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• pp.303-310
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• 2008

ICP-CVD(inductively-coupled Plasma chemical vapor deposition)를 사용하여 $250^{\circ}C$기판온도에서 140 nm 두께의 수소화된 비정질 실리콘(${\alpha}$-Si:H)을 제조하였다. 그 위에 30 nm-Ni을 열증착기를 이용하여 성막하고, $200{\sim}500^{\circ}C$ 사이에서 $50^{\circ}C$간격으로 30분간 진공열처리하여 실리사이드화 처리하였다. 완성된 실리사이드의 처리온도에 따른 실리사이드의 면저항값 변화, 미세구조, 상 분석, 표면조도 변화를 각각 사점면저항측정기, HRXRD(high resolution X-ray diffraction), FE-SEM(field emission scanning electron microscope), TEM(transmission electron microscope), SPM(scanning probe microscope)을 활용하여 확인하였다. $300^{\circ}C$에는 고저항상인 $Ni_3Si$, $400^{\circ}C$에서는 중저항상인 $Ni_2Si$, $450^{\circ}C$이상에서 저저항의 나노급 두께의 균일한 NiSi를 확인되었다. SPM결과에서 저저항 상인 NiSi는 $450^{\circ}C$에서 RMS(root mean square) 표면조도 값도 12 nm이하로 전체 공정온도를 $450^{\circ}C$까지 낮추어 유리와 폴리머기판 등 저온기판에 대응하는 저온 니켈모노실리사이드 공정이 가능하였다.