• Title/Summary/Keyword: Plasma Display

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Preparation of MgO Protective Layer for AC PDP by Unbalanced Magnetron Sputtering (불평형 마그네트론 스파터링에 의한 AC PDP의 MgO 보호층 형성에 관한 연구)

  • Ko, Kwang-Sic;Kim, Young-Kee;Park, Jung-Tae;Kim, Eun-Chin;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.142-145
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    • 2000
  • The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

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Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching (Cl2/HBr/CF4 반응성 이온 실리콘 식각 후 감광막 마스크 제거)

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.353-357
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    • 2010
  • Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

Dielectric Characteristics on Filler Content and Sintering Temperature in Pb-Free White Dielectric Layer (Pb-Free 백색유전체에서 필러함량과 소성온도에 따른 유전체 특성)

  • An, Yong-Tae;Choi, Byung-Hyun;Ji, Mi-Jung;Lee, Jung-Min;Kim, Hyun-Sun;Jung, Kyung-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.755-759
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    • 2008
  • For the development of a new white dielectric layer in plasma display panel, different $TiO_2$ types as a filler was add to the $Bi_2O_3$-BaO-ZnO glass matrix. The reflectance and dielectric constant of dielectric have been investigated as a function of the mixing content (rutile and anatase), and sintering temperature. The reflectance of dielectric sintered at the 520$^{\circ}C$ appeared most highly and suitable in terms of the adhesion and reflectance of the soda-lime glasses. Also, the thermal expansion coefficient of dielectric was found to be $85.6\times10^{-7}/K$, which was similar to that of the soda-lime glasses. Especially, the dielectric constants were not increased with increasing of $TiO_2$ filler contents.

Synthesis of CNTs with plasma density and tilt degree of substrate (플라즈마 밀도와 기판의 기울임 정도에 따른 탄소나노튜브의 성장)

  • Kim, Kyung-Wook;Choi, Eun-Chang;Park, Yong-Seob;Kim, Hyung-Jin;Yun, Deok-Yong;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.393-394
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    • 2008
  • Carbon nanotubes are attractive nano-structured materials because of their remarkable electronic, physical, chemical properties. Due to these reasons, application researches of CNTs are actively processed on the display, the electronic element, the nano-diode fields and the semiconductor element. Today, The major issue of semiconductor technique are via and interconnects. CNTs are used to make via and interconnects because of high electric currents density and high heat transfer. Control of the orientation of grown CNTs is very important thing for making via and interconnects. Via are horizontal growth of CNTs and interconnects are vertical growth of CNTs. This research is based on the experiment using control of gas flow directions and DC bias. Scanning Electron Microscope (SEM) was used to check this experiment.

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A Study on the Condition of LED Lights Flicker (국내 LED 조명등에서 플리커 현상에 관한 연구)

  • Heo, Min;Ko, Jae-jun;Kim, Chung-hyeok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.11
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    • pp.729-735
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    • 2016
  • It is highly important issue to use an energy efficiently for sustainable prosperity of mankind. From this point of view, using LED lighting can be a good alternative because it has a lot of advantages such as high efficiency, long life time and eco-friendly manufacturing process. That is the reason why using LED lighting has been encouraged worldwide. However, in situations that LED lighting is replacing traditional lighting quickly, the problem of the flicker of LED lighting has emerged as an important issue. Therefore, in foreign countries like US or Japan in order to ensure the reliability of LED lighting, study for flickering effects of the human body and test methods are have been actively conducted. But related research in domestic situation is an insufficient condition. In this study, a flicker characteristic was measured conventional lamps such as incandescent lamps or fluorescent lamp and 81 items of LED lightings which are distributed in domestic markets.

Roles of Dopamine D2 Receptor Subregions in Interactions with β-Arrestin2

  • Zhang, Xiaohan;Choi, Bo-Gil;Kim, Kyeong-Man
    • Biomolecules & Therapeutics
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    • v.24 no.5
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    • pp.517-522
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    • 2016
  • ${\beta}$-Arrestins are one of the protein families that interact with G protein-coupled receptors (GPCRs). The roles of ${\beta}$-arrestins are multifaceted, as they mediate different processes including receptor desensitization, endocytosis, and G protein-independent signaling. Thus, determining the GPCR regions involved in the interactions with ${\beta}$-arrestins would be a preliminary step in understanding the molecular mechanisms involved in the selective direction of each function. In the current study, we determined the roles of the N-terminus, intracellular loops, and C-terminal tail of a representative GPCR in the interaction with ${\beta}$-arrestin2. For this, we employed dopamine $D_2$ and $D_3$ receptors ($D_2R$ and $D_3R$, respectively), since they display distinct agonist-induced interactions with ${\beta}$-arrestins. Our results showed that the second and third intracellular loops of $D_2R$ are involved in the agonist-induced translocation of ${\beta}$-arrestins toward plasma membranes. In contrast, the N- and C-termini of $D_2R$ exerted negative effects on the basal interaction with ${\beta}$-arrestins.

A Study on Inspection Technology of PDP ITO Defect (PDP ITO 결함 검출기술에 관한 연구)

  • 송준엽;박화영;정연욱;김현종
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.191-195
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    • 2003
  • The formation degree of sustain (ITO pattern) decides quality of PDP (plasma display panel). For this reason. it makes efforts in search defects more than 30 ${\mu}{\textrm}{m}$. Now, the existing inspection process is dependent upon naked eye or SEM equipment in off-line PDP manufacturing process. In this study developed prototype inspection system of PDP ITO glass. This system creates information that detects and sorts kind of defect automatically. Design ed inspection technology adopts line-scan method by slip-beam formation for the minimum of inspection time and image processing algorithm is embodied in detection ability of developed system. Designed algorithm had to make good use of kernel matrix which draws up an approach to geometry. A characteristic of area-shaped defects, as pin hole, substance, protrusion et al, are extracted from blob analysis method. Defects, as open, short, spots, et al, are distinguished by line type inspection algorithm. In experiment results, we could have ensured ability of inspection that can be detected with reliability of up to 95% in about 60 seconds

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Preparation of Lead-free Silver Paste with Nanoparticles for Electrode (나노입자를 첨가한 전극용 무연 silver 페이스트의 제조)

  • Park, Sung Hyun;Park, Keun Ju;Jang, Woo Yang;Lee, Jong Kook
    • Journal of the Korean Society for Heat Treatment
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    • v.19 no.4
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    • pp.219-224
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    • 2006
  • Silver paste with low sintered temperature has been developed in order to apply electronic parts, such as bus electrode, address electrode in PDP (Plasma Display Panel) with large screen area. In this study, nano-sized silver particles with 10-30 nm were synthesized from silver nitrate ($AgNO_3$) solution by chemical reduction method and silver paste with low sintered temperature was prepared by mixing silver nanoparticles, conventional silver powder with the particle size 1.6 um and Pb-free frit. Conductive thick film from silver paste was fabricated by screen printing on alumina substrate. After firing at $540^{\circ}C$, the cross section and surface morphology of the thick films were analyzed by FE-SEM. Also, the sheet resistivity of the fired thick films was measured using the four-point technique.

탄소 음이온 빔에 의해 증착된 DLC 필름의 특성 평가

  • 김인교;김용환;이덕연;최동준;한동원;백홍구
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.59-59
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    • 1999
  • DLC(diamond-like carbon)필름은 다이아몬드와 유사한 강도, 낮은 마차계수, 높은 Optical band gap, NEA(negative electron affinity)등의 우수한 특성을 가지고 있어, 내마모 코팅이나 정보저장 매체의 윤활 코팅, FED(field emission display)의 전계방출소자등 다양한 분야에의 응용이 연구되고 있다. DLC 필름은 PECVD(plasma enhanced chemical vapor deposition), IBAD(ion beam assisted deposition), Laser ablation, Cathodic vacuum arc등의 process를 이용하여 증착되고 있다. 특히 이러한 필름의 물성은 입사되는 이온의 에너지에 의해 좌우되는데, Lifshitz 등의 연구에 의하여 hyperthermal species를 이용한 DLC 필름의 성장은 초기에 subsurface로의 shallow implantation이 일어난 후 높은 sp3 fraction을 갖는 필름이 연속적으로 성장한다는 subplantation model이 제시 되었다. 본 연구에서는 기판과 subplantation 영역이 이후 계속하여 증착되는 순수 DLC 필름의 특성 변호에 미치는 영향에 대하여 관심을 가지고 실험을 행하였다. 본 실험에서는 상기 제시되어 있는 방법보다도 더욱 정확하고도 독립적으로 탄소 음이온의 에너지와 flux를 조절할 수 있는 Cs+ ion beam sputtering system을 이용하여 탄소 음이온의 에너지를 40eV에서 200eV까지 변화시키며 필름을 증착하였다. Si(100) 웨이퍼를 기판으로 사용하였고 증착 압력은 5$\times$10-7torr 였으며 인위적인 기판의 가열은 하지 않았다. 또한 Ion beam deposited DLC film의 growth process를 연구하기 위하여 200eV의 탄소 음이온을 시간(증착두께)을 변수로 하여 증착하였고, 이 때에는 Kaufman type의 gas ion beam을 이용하여 500eV의 Ar+ ion으로 pre-sputering을 행하였다. 탄소 음이온의 에너지와 증착두께에 따라 증착된 film 내의 sp3/sp2 ratio 의 변화를 XPS plasmon loss 와 Raman spectra를 이용하여 분석하였다. 또한 증착두께에 따른 interlayer의 결합상태를 관찰하기 위하여 AES와 XPS 분석을 보조로 행하였다.

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Effect of pH and Drying Temperature on Luminescent Properties of Zn2SiO4:Mn,Al Green Phosphors by Sol-Gel Technique (졸-겔 합성에서 pH 및 건조온도가 Zn2SiO4:Mn,Al 녹색 형광체의 발광특성에 미치는 영향)

  • Sung, Bu-Yong;Han, Cheong-Hwa;Park, Hee-Dong
    • Journal of the Korean Ceramic Society
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    • v.42 no.5 s.276
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    • pp.333-337
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    • 2005
  • In order to improve the performance of green emitting phosphors for plasma display panel, the $Zn_2SiO_4:Mn,Al$ phosphors were synthesized using sol-gel technique and studied using SEM and VUV photoluminescence spectrometer. pH values of the starting solutions (pH = 0.5$\~$2.34) were controled by HCl as the catalysis of hydrolysis and wet gels were dried at $80^{\circ}C$ and $120^{\circ}C$, respectively. We investigated the effects of pH and drying temperatures during sol-gel processes. The results indicated that the phosphor prepared at pH = 1 showed the maximum emission intensity in both drying conditions and the effect of pH of the starting solution on morphology were increased with particle size as HCl and phosphor dried at high temperature showed more spherical and smaller particles than at low.