• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1350-1351
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• 2008

대기압 플라즈마를 발생시키는 것은 종래의 저기압 플라즈마를 발생시키는 것 보다 대단히 어렵다. 하지만, 대기압 플라즈마는 진공장치가 필요 없고, 제작방식이 비교적 간편하며 살균, 의료, 표면처리 등 다양한 응용이 가능해서 그 잠재력이 매우 크다. 본 연구에서는 유전체가 없는 두 전극사이에서 대기압 저온 마이크로 플라즈마를 발생시켰으며, submicrosecond pulse 파형으로 glow discharge를 유지할 수 있었다. 플라즈마 소스의 전극 간격은 200[${\mu}m$]이고 방전개시전압은 약 450${\sim}$600[V]이다. 플라즈마를 발생시키기 위한 feeding gas는 He 100%이다. 본 연구에서 개발된 대기압 플라즈마는 소비전력이 2[W]미만으로 온도는 조건에 따라 40$^{\circ}C$미만으로 발생 가능하다. 또한 스펙트럼 분석 시 777nm인 산소원자의 peak이 다른 원자 혹은 분자들의 peak보다 월등히 높다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1488-1490
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• 2008

The gyroscope is the sensor for detecting the rotation in inertial reference frame and constitute the navigation system together an accelerometer. As the inertial reference equipment for attitude determination and control in the satellite, the mechanical gyroscope has been used but it bring the disturbance for mass unbalance so the disturbance give a bad influence to the observation satellite mission because the mechanical gyroscope has the rotation parts. During the launch, The mechanical gyroscope is weak in vibration, shock and has the defect of narrow operating temperature range so it need the special design in integration. Recently the low orbit observation satellite for seeking the high pointing accuracy of image camera payload accept the FOG(Fiber Optic Gyro) or RLG(Ring Laser Gyro) for the attitude determination and control. The Ring Laser Gyro makes use of the Sanac effect within a resonant ring cavity of a He-Ne laser and has more accuracy than the other gyros. It need the 1000V DC to create the He-Ne plasma in discharge tube. In this paper, the design process of the High Voltage Power Supply for RLG(Ring Laser Gyroscope) is described. The specification for High Voltage Power Supply(HVPS) is proposed. Also, The analysis of flyback converter topology is explained. The Design for the HVPS is composed of the inverter circuit, feedback control circuit, high frequency switching transformer design and voltage doubler circuit.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.8
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• pp.838-842
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• 2015

The Li-air battery is a promising candidate for the most energy-dense electrochemical power source because it has 5 to 10 times greater energy storage capacity than that of Li-ion batteries. However, the Li-air cell performance falls short of the theoretical estimate, primarily because the discharge terminates well before the pore volume of the air electrode is completely filled with lithium oxides. Therefore, the structure of carbon used in the air electrode is a critical factor that affects the performance of Li-air batteries. In a previous study, we reported a new class of carbon nanomaterial, named carbon nanoballs (CNBs), consisting of highly mesoporous spheres. Structural characterization revealed that the synthesized CNBs have excellent a meso-macro hierarchical pore structure, with an average diameter greater than 10 nm and a total pore volume more than $1.00cm^3g^{-1}$. In this study, CNBs are applied in an actual Li-air battery to evaluate the electrochemical performance. The formation mechanism and electrochemical performance of the CNBs are discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.216.1-216.1
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• 2014

Closed drift ion source는 그 특성으로 인하여 강판 표면처리, 금속 표면 산화막 형성, 폴리머 혹은 기타 표면 개질 등 다양한 분야에서 사용이 되고 있다. 다양한 환경에서 사용 되는 소스의 특성으로 인하여 각기 다른 공정에 대한 최적의 특성이 요구 되며, 이러한 공정 환경에 맞춘 소스를 설계하기 위해서 ion source내 전극의 구조 및 자기장 세기 등 이온소스의 구조적 특성에 대한 연구가 필요하게 된다. 본 연구에서는 선형 이온소스의 구조 설계를 위한 실험을 소형(이온빔 인출 슬릿 직경: 60 mm) 이온빔 인출 장치를 제작하여 전극 구조에 따른 방전 특성을 우선적으로 평가를 실시하여 소형 이온빔 인출 장치에서 도출된 결과를 바탕으로 0.3 m급 linear closed drift ion source 설계에 대한 변수를 조사 하였다. 실험은 양극-음극(C-A) 간 간격 및 음극 슬릿(C-C) 간격 그리고 자기장 세기 조건에서 방전 전류 및 인출 이온빔 전류량 측정하였으며, 이 결과를 전산모사 결과와 비교 하였다. 방전전압 1~5 kV, 가스유량 10~50 sccm 조건에서 Ar 이온빔 방전 특성을 평가한 결과, 양극-음극(C-A) 간격이 넓을수록, 음극-음극(C-C) 간격이 좁을수록 방전 전류량이 증가함을 확인 하였다. 또한, 공정 가스 압력 및 자기장 세기 변화에 따른 1~5 kV의 방전 전압에 대한 방전 특성의 관찰 결과, 압력 및 자기장 변화에 따라서 방전 전류의 변화를 관찰 할 수 있었으며, 이에 대한 결과를 통하여 이온 소스 구조 내부에서의 방전 영역에 대한 압력과 자기장 세기에 대한 영향을 분석 할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.180-186
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• 2005

As a driving method of AC-PDP, Address-Display Separated(ADS) driving has been widely adopted for its simple architecture and low discharge failure rate. However, a high definition like a HDTV has defect of long addressing time by reason of a number of pixels. Priming effect isn't fully sustained because of long addressing time during the address period. Therefore, it has different wall charge and luminance of each addressing time in the sustain period. In this study, we suggest a new driving waveform on the address period to improve these defects. We applied a ramp waveform, instead of a square waveform, to an address period in ADS, for operating on the AC-PDP, which used the conventional gas [He-Ne-Xe]. When the ramp waveform is applied to the address period, we experimented for uniform wall charge and the improved luminance by sustained Priming effect at each addressing time in the sustain period.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.190-195
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• 2011

Diamond-like carbon (DLC) has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion on the metal substrates because of weak bonding between DLC film and the metal substrate. The purpose of this study is to enhance an adhesion of DLC film. For improving adhesion, the substrate was treated by active screen plasma nitriding before DLC film deposing. Nitrided substrates were investigated by Glow Discharge Spectrometer (GDS), Micro-Vickers Hardness. DLC films were deposited on several metals by linear ion source, and characteristics of the films were investigated using nano-indentation, Field Emission Scanning Electron Microscope (FESEM). The adhesion was measured by scratch tester. The adhesion of DLC films was increased when nitriding layer was formed before DLC deposition. Therefore, the adhesion of DLC film can be enhanced as increasing the hardness of materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1411-1413
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.