• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.572-573
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• 2005

Discharge of the flat lamp lighting source research are requested very much. For improving brightness. life time. efficiency of flat lamp and plasma diagnosis of the flat lamp lighting source to understand property of lighting source is very important. When a distance of discharge electrode is 5.5mm and width is 16.5mm. we measured electron temperature and electron density measured with single Langmuir probe in flat lamp. We tested the discharge from 100 Torr to 300 Torr pressure. The pulse type was rectangular with frequency 20kHz and duty ratio was 20%. In result. electron temperature decreases and electron density increased as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• 한국수소및신에너지학회논문집
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• 제32권5호
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• pp.340-346
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• 2021

The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte fabricated by plasma-enhanced atomic layer deposition method was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~52% for 30 min, which continually decreased as time increased but degradation rate gradually decreased. The open circuit voltage ratio decreased with respect time; however, its behavior was evidently different from the reduction behavior of the peak power density. The activation resistance ratio increased as ~127% for 30 min, which was almost similar with the reduction behavior of the peak power density ratio.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권8호
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• pp.365-370
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• 2005

Microwave diagnostics have been widely utilized to measure the important parameters of high temperature and high density plasmas. Reflectometry is known as a promising microwave diagnostic which has a number of merits to measure electron density profiles. In the KSTAR device, X-mode FM reflectometry is planned to measure the plasma density profiles. FM reflectometry is required to extract phase information on raw mixer IF signals, thereby obtaining time-of-flight of reflectometry signals. It is known that the data analysis method is crucial to determine the performance of FM reflectometry In fact, there are several analysis programs which have been utilized in various FM systems. Since each program was developed for a specific device, however, it is difficult to directly apply it to a different reactor like the KSTAR device. It is necessary, therefore, to develop a data analysis program for the KSTAR FM reflectometry. In this paper, complex digital demodulation (CDM) and wavelet transformation are examined in terms of the performance of density profile reconstruction. For the comparison of both methods, FM reflectometry signals are generated on the basis of assumed profiles and the interaction of the X-mode wave and the plasma. In order to see how well both methods work under various conditions, three types of profiles are assumed and noise effects are included. As a result, both methods work well under the condition of gentle density gradient and small noise level. As density gradient becomes steeper and noise level gets higher. the reconstruction performance of wavelet is better than that of CDM.

• 한국세라믹학회지
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• 제38권8호
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• pp.687-692
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• 2001

Silicon nitride-La-silicon oxynitride ceramics were fabricated by Spark Plasma Sintering (SPS). The density, crystalline phase and microstructure were compared with those obtained by Hot Pressing (HP). The full density was achieved within 40 min by spark plasma sintering at 1$650^{\circ}C$, whereas the same result was required by hot pressing with a dwell time of 500 min at higher temperature. There were some differences in the microstructure and second phases in the sintered ceramics, which are attributed to the rapid densification in the spark plasma sintering. The fine and acicular grain microstructure appeared in spark plasma sintering.

• 한국진공학회지
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• 제8권3B호
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• pp.368-375
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• 1999

The Maxwell equation and the transformer equivalent-circuit model are applied to a radio frequency planar inductively coupled plasma. The spatial distribution of the vector potential, the magnetic field, and the electric field are obtained analytically. As a result, the plasma current, the mutual inductance between the coil and the plasma, and the self inductance of plasma are found to increase with increasing skin depth. The spatial distribution of absorbed power has maximum where the antenna coil exists, and has a similar profile to that of the induced electric field. The power transfer efficiency is found to increase with increasing gas pressure before a saturation around p+ 20mTorr, while it shows an increase with the plasma density before a slight decrease around a density of $5\times10^{11}/\textrm{cm}^3$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.501-501
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• 2012

A 2.45 GHz electron cyclotron resonance (ECR) plasma source with a belt magnet assembly configuration (BMC) was developed for hyperthermal neutral beam (HNB) generation. A plasma source for high flux HNB generation should be satisfied with the requirements: low pressure operation, high density, and thin plasma. The ECR plasma source with BMC achieved high density at low operation pressure due to electron confinement enhancement caused by high mirror ratio and drifts in toroidal direction. The 2.45 GHz microwave launcher had a circularly bended WR340 waveguide with slits. The microwave E-field profile induced by the microwave launcher was studied in this paper. The E-field profile was a cups field perpendicular to B-filed at ECR zone. The optimized E-field profile and B-field were found for effective ECR heating.

• 한국재료학회지
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• 제14권5호
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• pp.363-367
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• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.369-372
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• 1997

Wire Ion Plasma Source (WIPS) is a plasma device which has a thin wire anode, a coaxially-set cylindrical cathode and electrodes located in both ends of the cylinder. The potential between the anode and cathode changes logarithmically by this electrode configuration. This electrode configuration enables high-density plasma to produce even at a low anode voltage. Since the electrode configuration is axially symmetric and long. plasma with axially uniform number density can be produced. Using particle-in-cell(PIC) and Monte Carlo collision(MCC), we investigate the traiectory of electrons and the characteristics of D.C. discharge in Wire ton Plasma Source.

• Current Applied Physics
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• 제18권11호
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• pp.1375-1380
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• 2018

Atmospheric-pressure plasma has a great potential in many applications due to its simplicity rather than low pressure plasmas. In material processing, biomedical applications, and many other applications, the input power, gas flow rate, and the geometry of electrode have been mainly considered and studied as important external parameters of atmospheric-pressure plasma control. Besides, since the atmospheric-pressure plasmas are typically generated in an open air, the relative humidity is difficult to control and can change day by day. Therefore, the relative humidity cannot be ignored for plasmas. Thus, in this work, the atmospheric-pressure plasma jet was characterized by changing relative humidity, and it was found that the increase in electron density and OH radicals are due to Penning ionization between helium metastable and water vapors at higher humidity condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.