• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• Food Science of Animal Resources
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• v.20 no.1
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• pp.1-7
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• 2000

The influence of the ditary containing boiled eggs on the plasma cholesterol level and antithrombotic activity in rats was studied. Rats were fed basal diet(0% boiled eggs) as a control group or diets containing 25% and 50% boiled eggs or a mixed diet with 95% boiled eggs plus 5% $\alpha$-cellulose powder as a experimental groups for 30 days. The bleeding time and whole blood clotting time were significantly(P<0.05) increased by feeding diet containing 25% boiled eggs compared to groups of basal diet, 50% or 95% boiled eggs diets. The plasma clotting time was high in group of 25% boiled eggs diet. However, there were no difference in plasma clotting time among rats fed the dietary boiled eggs. The levels of plasma total cholesterol(TC) and low density plus very low density lipoprotein cholesterol(LDL, VLDL-C) were significantly(P<0.05) highest in group 95% boiled eggs diet compared to others. There were no differences in high density lipoprotein cholesterol(HDL-C) among rats fed the dietary boiled eggs. The levels of plasma TC, HDL-C, LDL$.$VLDL-C and the ratios of HDL-C/TC were not significant among the basal diet, 25% and 50% boiled eggs diets. These results suggest that the intakes of the dietary boiled eggs have the antithrombotic activity and plasma cholesterol lowering effect.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1996.11a
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• pp.63-66
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• 1996

Electron temperature and electron density were measured in a radio-frequency(rf) inductively coupled plasma using probe measurements. Measurements were made in an argon discharge for pressures from 10 to 100mTorr and input rf power from 100 to 800W. Spatial distribution Electron temperature and electron density were measured for discharge with same aspect ratio. Electron temperature and Electron density were found to depend on both pressure and power. Electron density was creased with increasing pressure, but peaked in a 70mTorr discharge. Radial distribution of the electron density was peaked in the plasma fringes. These results were compared to a simple model of inductively coupled plasmas.

• Bulletin of the Korean Chemical Society
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• v.22 no.8
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• pp.827-832
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• 2001

The excitation temperature and electron number density have been measured for end-on-view ICP discharge. In this work, end-on-view ICP-AES equipped with the newly developed “optical plasma interface (OPI)” was used to eliminate or remove the neg ative effects caused by end-on-plasma source. The axial excitation temperature was measured using analyte (Fe I) emission line data obtained with end-on-view ICP-AES. The axial electron number density was calculated by Saha-Eggert ionization equilibrium theory. In the present study, the effects of forward power, nebulizer gas flow rate and the presence of Na on the excitation temperature and electron number density have been investigated. For sample introduction, two kinds of nebulizers (pneumatic and ultrasonic nebulizer) were utilized.

• Journal of IKEEE
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• v.28 no.1
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• pp.38-45
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• 2024

Most previous works about magnetic effect on plasma emission were interested in emission enhancement which was useful to various fields of plasma application. On the contrary, the following work is interested in plasma dissipation rarely reported in prior researches and expected to help advance plasma-controlling technique. Nd:YAG laser (1064 nm, 6 ns) was focused on three kinds of metals (Al, Ti and STS) and air. The permanent magnetic field (0.4 T) of Nd₂Fe₁₄B magnet was provided passing throughout laser-induced plasma. The spectra of plasma in both the presence and absence of the magnetic field were observed with varying laser power and delay time of the spectrograph. In this work it was uniquely discovered that the plasma always dissipated easily in the presence of magnetic field irrespective of the laser power. With the O I(777.42 nm)-line shape function fitted to Lorentz profile, its half width at half maximum (HWHM) was evaluated to verify that the magnetic field increased the plasma density. It is concluded that magnetic field facilitates not only plasma emission enhancement but also plasma dissipation, increasing recombination rate which is proportional to plasma density.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.376-378
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• 1997

Plasma density and its axial distribution and uniformity on the substrate in a helical resonator plasma in the external magnetic field have been measured using Langmuir probes. Net RF power is set to 200W and chamber pressure is varied from $1{\times}10^{-1}Torr$ to $1{\times}10^{-4}Torr$. There are three kinds of external magnetic field structure applied on the helical resonator plasma. One is a uniform magnetic field, another is a plus gradient magnetic field and the third is a minus gradient magnetic field. Of the three magnetic field structure, the minus gradient magnetic field is found to show the highest increase in plasma density on the substrate compared with other magnetic structures. In order to avoid radial density ununiformity, weak magnetic fields under 100Gauss are applied.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.