• Asian-Australasian Journal of Animal Sciences
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• v.17 no.11
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• pp.1570-1574
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• 2004

A flock of AA breed chickens were reared in peterstme brood-vait chamber and were provided with high energy pelleted feed. At 14 d of age, a total of 350 birds were randomly divided into 3 groups as follows: 100 birds were exposed to normal ambient temperature of 20$^{\circ}C$ for control group; 150 birds were exposed to lower ambient temperature of 11$^{\circ}C$ to induce ascites (treatment I); and another group of 100 birds were exposed to lower ambient temperature of 11$^{\circ}C$ and fed diet containing 1% L-arginine for ascitic prophylactic treatment (treatment II). Samples were collected from blood and abdominal fluid of chicken at 3, 4, 5, 6 and 7 wk of age subsequently, to analysis the contents of plasma endothelin (ET-1), angiotensin II (Ang II), cyclic adenosine monophosphate (cAMP), cyclic guanosine monophosphate (cGMP). The results indicated that the contents of cAMP, cGMP, and Ang II in reatment I and ascitic broilers were higher than the corresponding control group (p<0.01, p<0.05), ET-1 of preascitic broilers were control group (p<0.05), while there was an insignificant difference with later ascitic broilers. The contents of cAMP and cGMP in treatment II were higher than the treatment I and control groups (p<0.01, p<0.05), whereas, the contents of Ang II were gradually decreased compared to the control group (p<0.05), the contents of ET-1 were insignificantly different. On further analysis, the increased plasma Ang II at low ambient temperature condition in broilers made endothelium cell secretion of increased ET-1, cAMP, cGMP and decreased NO. Therefore, low temperature accelerated ascites syndrome in broilers. Supplemently L-arginine can decrease ET-1, and increase cAMP and cGMP. It is concluded that cAMP mediated in broilers pulmonary hypertension syndrome.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.468-468
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• 2014

우리나라는 미국, EU, 러시아, 중국, 인도 등 다국간 협력 사업인 국제핵융합실험로(ITER) 사업에 참여하고 있으며, 블랑켓 일차벽 및 시험용 블랑켓 모듈(Test Blanket Module, TBM) 제작기술 개발에 필요한 고열부하 검증시험을 국내에서 자체적으로 실시하기 위한 고열부하시험 시설을 구축하였다. 한국원자력연구원에 설치된 고열부하시험 시설의 주요 사양은 다음과 같다. 열원으로는 전자빔을 사용하며, 빔출력은 최대 300 kW이고, 최대 출력밀도는 $10GW/m^2$이다. 전자빔의 최대 가속전압은 60 kV이고, 최대 조사 면적은 설계상 $70cm{\times}50cm$이다. 고열부하 장비는 핵융합환경과 유사한 고열부하를 시험대상물에 인가하여 접합 및 냉각 성능을 평가하는 장비이며, ITER 블랑켓 및 TBM 일차벽의 경우 약 $0.5MW/m^2$, 가속실험 혹은 사고 시 순간 시나리오 해석을 위해서 $5MW/m^2$까지 고려되기도 한다. ITER 블랑켓 일차벽 제작기술 개발 및 검증(2004~2011)에서는 외국장비(러시아 TSEFEY, 일본 JEBIS, 독일 JUDITH)를 활용하였으나, 고비용 문제와 장비 이용 시간의 제한에 따라 사용이 어려워, 국내에서는 KoHLT-1, 2 장비를 자체 구축하여 활용하여 왔다. 현재는 높은 열부하 인가조건, 약 $5MW/m^2$을 달성하기 위해서 전자빔을 이용한 고열부하시험 장치를 마련하였으며, ITER 블랑켓 일차벽 Semi-Prototype 검증시험, TBM, KSTAR 디버터 실험 등 핵융합로 일차벽 개발에 활용하고 있다. 전자빔, 전원 및 진공 chamber 등 전체 고열부하 시험장치를 구축하여 ITER 장치를 포함해서 토카막 디버터 등 핵융합 플라즈마 대면부품 (Plasma Facing Components, PFC) 재료 개발과 국방, 항공우주 분야의 열유속 게이지 측정법 향상 연구, 로켓 추진 엔진 연소실의 열유속 모니터링 연구, 항공기 프로펠러 연구 등에 활용할 수 있을 것으로 기대된다.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.4
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• pp.346-353
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• 2012

The Laser-Induced Breakdown Spectroscopy (LIBS) has great advantages as an analytical technique, namely real-time analysis without sample preparation, ideal for mobile chemical sensor for space exploration. The LIBS plasma characteristics are strongly dependent on the surrounding pressure. In this study, seven types of target (C, Ti, Ni, Cu, Sn, Al, Zn) were investigated for their elemental lifetime. The target was located in vacuum chamber which has the pressure range of 760 to $10^{-5}$ torr. As the pressure is decreased, the elemental lifetimes of carbon and titanium declined, while all other targets showed increased lifetimes until reaching 1 torr and declined with continued pressure decrease. The boiling point and electronegativity amongst the physicochemical properties of the samples are used to explain this peculiarity.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.43-52
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• 2020

Various aging treatments were conducted on AISI 630 martensitic precipitation hardening stainless steel in order to optimize aging condition. Aging treatment was carried out in the vacuum chamber of Ar gas with changing aging temperature from 380℃ to 430℃ and aging time from 2h to 8h at 400℃. After obtaining the optimized aging condition, several nitrocarburizing treatments were done without and with the aging treatment. Nitrocarburizing was performed on the samples with a gas mixture of H₂, N₂ and CH₄ for 15 h at vacuum pressure of 4.0 Torr and discharge voltage of 400V. The corrosion resistance was improved noticeably by combined process of aging and nitrocarburizing treatment, which is attributed to higher chromium and nitrogen content in the passive layer, as confirmed by XPS analysis. The optimized condition is finalized as, 4h aging at 400℃ and then subsequent nitrocarburizing at 400℃ with 25% nitrogen and 4% methane gas for 15h at vacuum pressure of 4.0 Torr and discharge voltage of 400V, resulting in the surface hardness of around 1300 HV_0.05 and α'_N layer thickness of around 11 ㎛ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• Journal of Ocean Engineering and Technology
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• v.22 no.3
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• pp.82-88
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• 2008

The diesel engine of the merchant ship has been aperated in severe environments more and more, because the temperature of the exhaust gas of a combustion chamber is getting higher and higher with increasing use of heavy oil of law quality, due to the significant increase in the price of oil in recent some years. As a result, the degree of wear and corrosion between exhaust valve and seat ring is more serious compared to other engine parts. Thus the repair welding of exhaust valve and seat ring is a unique method to prolong the life of the exhaust valve, from an economical point of view. In this study, the corrosion property of both weld metal and base metal was investigated using electrochemical methods such as measurement of corrosion potential, cathodic and anodic polarization curves, cyclic voltammogram, and polarization resistance in 5% H2SO4 solution. The test specimen was a part of an exhaust valve stem being welded as the base metal, using various welding methods. In all cases, the corrosion resistance as well as hardness of the weld metal zone was superior to the base metal. In particular, plasma welding showed relatively good properties for both corrosion resistance and hardness, compared to other welding methods. In the case of DC SMAW (Shielded metal arc welding), corrosion resistance of the weld metal zone was better than that of the base metal, although its hardness was almost same as the base metal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.397-397
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• 2007

Diamondlike carbon (DLC) coatings were deposited on alumina ceramic seals using a plasma immersion ion deposition technique (PIID). Then they were subjected to tribological tests using a pin-on-disc tribometer under a high load (1.3 GPa) and under elevated temperatures up to 400C. Coefficients of friction (COFs) were recorded and compared with that of the untreated alumina while the wear tracks were analyzed using SEM with EDS to characterize the DLC films. To enhance the DLC adhesion to the substrate, various interlayers including Si and Cr were deposited using the PIID process or an ion beam assisted deposition (IBAD) method. It was observed that the DLC coating, if adhering well to the substrate, reduced the COFs significantly, from 0.4-0.8 for the uncoated alumina to about 0.05-0.1, within the tested temperature range. The adhesion was determined by the interlayer type and possibly by the application method. Cr interlayer did not perform as well as the Si interlayer. This could also be due to the fact that the Cr interlayer and the subsequent DLC coating had to be done in two different processing systems, while both the Si interlayer and the subsequent DLC film were deposited in one system without breaking the chamber. The coating failure mode was found to be delamination between the Cr and the alumina substrate. In contrast, the Si interlayer with proper DLC deposition procedures resulted in very good adhesion and hence excellent tribological performance. Further study may lead to future DLC applications of ceramic seals.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.161-168
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• 1998

Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15% $CH_4$, 7.5 mTorr, and 14 cm distance, resulting in about 3 $\mu\textrm{m}$/hr etch rate with smooth surfaces and vertical mesa sidewalls.