• The KSFM Journal of Fluid Machinery
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• v.15 no.3
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• pp.46-50
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• 2012

Plasma actuator makes parallel flow on the wall surface by the interaction between plasma and neutral air particles. Dielectric barrier discharge (DBD) plasma actuator is widely studied as one type of plasma actuators, which consists of one electrode exposed to the environmental gas and the other encapsulated by a dielectric material. This paper is experimentally focused on the performance of DBD plasma actuator mounted on a flat plate, which depends on kinds of the electrode materials, their thicknesses and the supplied voltage including its frequency. We measured the velocity magnitudes of the induced flow by a stagnation probe as a performance parameter of the plasma actuators. The velocity profiles of the flow induced by the plasma actuators are similar in all measurement cases. The magnitude of the induced velocity is strongly influenced by the thickness of the electrodes and the frequency of the input voltage. The performance of DBD plasma actuators is related to the electric properties of the electrode materials such as the ionization energy and the electrical resistivity.

• Korean Journal of Biological Psychiatry
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• v.2 no.2
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• pp.266-274
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• 1995

We invesigated whether the circadian rhythms of plasma MHPG and HVA concentrations exist in 11 healthy young adults, and analyzed the patterns of their circadian rhythms. The results were as follows : 1) The change in the mean plasma MHPG concentrations analyzed by repeated measures ANOVA was not statistically significant. Five subjects showed significant circadian rhythms of plasma MHPG concentrations of each individual, and 4 of those had the acrophases between 17PM and 24PM. 2) The change in the mean plasma HVA concentrations analyzed by repeated measures ANOVA was not statistically significant. Six subjects showed significant circadian rhythms of plasma HVA concentrations of each individual, and 4 of those had the acrophases between 21PM and 6AM. In conclusion, the circadian rhythm pattern of plasma HVA concentrations in our result is consistent with the previous study. It was suggested that plasma MHPG and HVA concentrations should be measured more frequently, and the physical activities of subjects be controlled more strictly for the following study.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.274-274
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• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.3
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• pp.122-128
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• 2009

DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.

• Carbon letters
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• v.6 no.4
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• pp.243-247
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• 2005

Plasma polymerization of allylamine subsequently after plasma pre-treatment was conducted on the activated carbon fibers (ACFs) for the immobilization of amine groups in the surface of ACFs. The change of structural properties of ACFs with respect to different polymerization conditions was investigated through BET method. The change of surface morphologies of ACFs with respect to different plasma polymerization power was also studied through AFM. It was found that the structural properties such as specific surface area and micropore volume could be optimized under certain plasma deposition conditions. It was reckoned that treatment and deposition showed adverse effect on plasma polymerization, in which the former developed the micro-structures of the ACFs and the latter tended to block the micro pores. The Fourier transform infrared spectroscopy (FTIR) revealed that the poly(allylamine) was successfully immobilized on the surface of ACFs and the amount of the deposited polymer layer was related to the plasma polymerization power. SEM results showed that the plasma deposited polymer layer were small and homogenously distributed. The size and the distribution of particles deposited were closely related to the plasma polymerization power, too.

• Journal of Environmental Science International
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• v.23 no.5
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• pp.985-993
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• 2014

For the field application of dielectric barrier discharge plasma reactor, a multi-plasma reactor was investigated for the inactivation of microorganisms in sewage. We also considered the possibility of degradation of non-biodegradable matter ($UV_{254}$) and total organic carbon (TOC) in sewage. The multi-plasma reactor in this study was divided into high voltage neon transformers, gas supply unit and three plasma modules (consist of discharge, ground electrode and quartz dielectric tube). The experimental results showed that the inactivation of microorganisms with treated water type ranked in the following order: distilled water > synthetic sewage effluent >> real sewage effluent. The dissolved various components in the real sewage effluent highly influenced the performance of the inactivation of microorganisms. After continuous plasma treatment for 10 min at 180 V, residual microorganisms appeared below 2 log and $UV_{254}$ absorbance (showing a non-biodegradable substance in water) and TOC removal rate were 27.5% and 8.5%, respectively. Therefore, when the sewage effluent is treated with plasma, it can be expected the inactivation of microorganisms and additional improvement of water quality. It was observed that the $NH_4{^+}$-N and $PO{_4}^{3-}$-P concentrations of sewage was kept at the constant plasma discharging for 30 min. On the other hand, $NO_3{^-}$-N concentration was increased with proceeding of the plasma discharge.

• BMB Reports
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• v.28 no.5
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• pp.387-391
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• 1995

In order to investigate whether phospholipase C (PLC) activity in oat celIs is regulated by Gprotein, we have characterized PLC in plasma membranes of oat tissues. To identify the purified plasma membrane, $K^+$-stimulated, $Mg^{2+}$-dependent ATPase activity was measured. The activity of ATPase was shown to be proportional to the concentration of membrane protein. To examine the PLC activity regulated by G-protein, we used the inside-out and outside-out plasma membrane mixture isolated from the oat cells. The plasma membrane mixture showed higher PLC activity than the one of the outside-out plasma membrane. This suggests that PLC activity is located at the cytoplasmic surface of plasma membrane. PLC activity in plasma membrane mixture was dependent on $Ca^{2+}$ with maximum activity at 100 ${\mu}m$ $Ca^{2+}$ and it was inhibited by 1 mM EGTA. Using Sep-pak $Accell^{TM}$ Plus QMA chromatography, we found that inositol 1,4,5-trisphosphate ($IP_3$) was produced in the presence of 10 ${\mu}m$ $Ca^{2+}$. The PLC activity in the membrane was enhanced by an activator of G-protein ($GTP{\gamma}S$) and not by an inhibitor ($GDP{\beta}S$). This indicates that a G-protein is involved in the activation of PLC in the plasma membrane of oat cells.

• Textile Coloration and Finishing
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• v.4 no.2
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• pp.76-83
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• 1992

Wool tropical and nylon taffeta were treated with low temperature plasma of $O_2$, $N_2$, NH$_3$, CF$_4$ and CH$_4$ for the intervals of 10 to 300 sec, and then dyed with leveling and milling type acid dyes in presence or absence of buffer solution. From the color depth of dyed fabrics, effect of plasma gases, treated time, dyeing time and temperature on dyeing property was studied. The results of the experiment can be summarized as follows: 1) The plasma treatments except methane gas increased the color depth of dyed wool fabrics, but not that of dyed nylon fabrics regardless of the plasma gases used. 2) The color depth of wool fabrics dyed in the dye bath without buffer solution was increased by the low temperature plasma, especially increased much more by CF$_4$ plasma treatment. It is found that with the identification of F- ion in the residual dye bath the hydrogen fluoride gas was adsorbed on wool fabrics in the plasma treatment. 3) The color depth of wool fabrics was increased with the time of $O_2$ and CF$_4$ plasma treatments. 4) In both cases of the leveling and milling type acid dyes, the rate of dyeing was increased in the low temperature plasma treatments, and it is found that the leveling type acid dye increased the color depth at relatively low temperature below 4$0^{\circ}C$, compared with the milling type acid dye.