• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.943-946
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• 2007

In-plane piezoelectric charge constant of Electro-Active paper (EAPap) was investigated based on direct and converse piezoelectric effects. EAPap samples were made with cellulose film with very thin gold electrode coated on both sides of the film. To characterize direct piezoelectricity of EAPap, induced charge was measured when mechanical stress was applied to EAPap. In-plane piezoelectric charge constant was extracted from the relation between induced charge and applied in-plane normal stress. To investigate converse piezoelectricity, induced in-plane strain was measured when electric field was applied to EAPap. Piezoelectric charge constant was also extracted from the relation of induced in-plane strain and applied electric field. Piezoelectric charge constants obtained from direct and converse piezoelectricity are 31 pC/N and 178 x 10-12m/V for 45 degree sample, respectively. Measured piezoelectric charge constants of EAPap provide promising potential as a piezoelectric material.

• Transactions of the Korean Society of Automotive Engineers
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• v.4 no.2
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• pp.173-182
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• 1996

An analytical model has been developed to predict the elastic properties of a filled resin reinforced by chopped fibers, a three-phase composite such as a filled sheet molding compound(SMC). In the model the matrix material and fillers form an effective matrix. The effective matrix is then considered to be reinforced with long fibers lying in the sheet plane but randomly oriented in the plane. Expressions for the resulting transversely isotropic composite properties are explicitly presented. Using this model, the Young's and shear moduli are calculated for the SMC sample with filler weight fraction of 35% and fiber content of 30%. The same properties are also determined experimentally. The agreement between the calculated and measured elastic moduli is found to be very good for the in-plane properties. However, the out-of-plane properties show a large difference because the effect of voids is not taken into account in the model.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.12 no.3
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• pp.221-227
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• 2002

The longitudinal and lateral in-plane vibrations of an axially moving membrane are investigated when the membrane has translating acceleration. By extended Hamilton's principle, the governing equations are derived. The equations of motion for the in-plane vibrations are linear and coupled. These equations are discretized by using the Galerkin approximation method after they are transformed into the variational equations, j.e., the weak forms so that the admissible functions can be used for the bases of the in-plane deflections. With the discretized equations for the in-plane vibrations, the natural frequencies and the time histories of the deflections are obtained.

• International journal of steel structures
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• v.18 no.4
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• pp.1265-1283
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• 2018

This paper presents a four-variable first-order shear deformation theory considering in-plane rotation of functionally graded plates. In recent studies, a simple first-order shear deformation theory was developed and extended to functionally graded plates. It has only four variables, separating the deflection into bending and shear parts, while the conventional first-order shear deformation theory has five variables. However, this simple first-order shear deformation theory only provides good predictions for simply supported plates since it does not consider in-plane rotation varying through the thickness of the plates. The present theory also has four variables, but considers the variation of in-plane rotation such that it is able to correctly predict the responses of the plates with any boundary conditions. Analytical solutions are obtained for rectangular plates with various boundary conditions. Comparative studies demonstrate the effects of in-plane rotation and the accuracy of the present theory in predicting the responses of functionally graded plates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Computers and Concrete
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• v.27 no.3
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• pp.199-210
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• 2021

The aim of this paper was to examine the continuous and discontinuous contact problems between the functionally graded (FG) layer pressed with a uniformly distributed load and homogeneous half plane using an analytical method and FEM. The FG layer is made of non-homogeneous material with an isotropic stress-strain law with exponentially varying properties. It is assumed that the contact at the FG layer-half plane interface is frictionless, and only the normal tractions can be transmitted along the contacted regions. The body force of the FG layer is considered in the study. The FG layer was positioned on the homogeneous half plane without any bonds. Thus, if the external load was smaller than a certain critical value, the contact between the FG layer and half plane would be continuous. However, when the external load exceeded the critical value, there was a separation between the FG layer and half plane on the finite region, as discontinuous contact. Therefore, there have been some steps taken in this study. Firstly, an analytical solution for continuous and discontinuous contact cases of the problem has been realized using the theory of elasticity and Fourier integral transform techniques. Then, the problem modeled and two-dimensional analysis was carried out by using ANSYS package program based on FEM. Numerical results for initial separation distance and contact stress distributions between the FG layer and homogeneous half plane for continuous contact case; the start and end points of separation and contact stress distributions between the FG layer and homogeneous half plane for discontinuous contact case were provided for various dimensionless quantities including material inhomogeneity, distributed load width, the shear module ratio and load factor for both methods. The results obtained using FEM were compared with the results found using analytical formulation. It was found that the results obtained from analytical formulation were in perfect agreement with the FEM study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.487-490
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• 2001

Residual DC voltage of the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method was studied. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.945-948
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• 2002

We studied electro-optical (EO) performances of a vertical-alignment (VA)-in plane switching (IPS) cell on a photopolymer surfaces. The VA-IPS cell, dark in voltage-off state, reveals bright uniformity in all directions due to the dual domainlike dierector configuration in the voltage-on state. For voltage-transmittance (V-T) measurement, the transmittance characteristics of the VA-IPS cell on the photopolymer surface was better than that of the VA-IPS cell on a polyimide(PI) surface.

• Korean Journal of Computational Design and Engineering
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• v.2 no.3
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• pp.161-174
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• 1997

In this paper, the techniques for graphic simulation of material removal process are described. The concepts of the bounding box and base plane are proposed. With these concepts, a real-time shaded display of a Z-map model being milled by a cutting tool following an NC path can be implemented very efficiently. The base planes make it possible to detect the visible face of Z-map model effectively. And the bounding box of tool sweep volume provides minimum area of screen to be updated. The proposed techniques are suitable for implementation in raster graphic device and need a few memories and a small amount of calculation. Proposed method is written in C and executable on MS-Windows95 and Window-NT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.590-594
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• 2001

The residual DC properties in the in-plane switching (IPS) liquid crystal displays(LCDs) which have different concentrations of cynao NLCs and different resistivities of fluorine NLCs were studied. We also propose a new residual DC measurement method, named 'light minimum/maximum method'. We confirmed the precision of residual DC measurement by light minimum/maximum method compared with the flicker minimizing method and found that new measurement method of residual DC is more accurate than that of the conventional flicker minimizing method since the resolution level of measurements is in 0.1V.