• Title/Summary/Keyword: Planar Substrate

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Development of Compact Broadband Bowtie Antenna Using Multi-layer Substrate for UWB Sensor Application (UWB 센서 응용을 위한 다층기판을 이용한 소형 광대역 보우타이 안테나 개발)

  • Woo, Dong Sik
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.37-41
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    • 2021
  • In this paper, a low-profile and broadband bowtie antenna using multi-layer substrate for UWB sensor application is presented. A compact bowtie antenna is designed and implemented on two multi-layered substrate with total thickness of 4.5 mm. The antenna consists of bowtie radiator and planar-type balun. The designed radiator and balun are connected to each other so that it can be easily implemented in various structures. The implemented antenna provides 3 to 6 dBi of gain for whole frequency range from 6.8 to 10 GHz.

Improvement of the characteristics and fabrication of a planar waveguide lens (평면 광도파로 렌즈의 제작 및 특성 개선)

  • 정석문;김재창;윤태훈;김길중
    • Korean Journal of Optics and Photonics
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    • v.7 no.1
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    • pp.51-59
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    • 1996
  • In this paper, we propose a new type of a planar waveguide lens, a meniscus lens instead of a plano-convex lens used widely for the optical integrated circuits such as optical numerical processors. A plano-convex lens has a spherical aberration caused by the linear boundary. In the proposed meniscus lens, this linear boundary is replaced by a circular-boundary, and the spherical aberration is removed. To test the performance of the proposed lens, a meniscus lens is designed using Fermat principle and fabricated on the Y-cut $LiNbO_3$ substrate. First a $Ti:LiNbO_3$ planar waveguide is fabricated on the $LiNbO_3$ substrate by Ti indiffusion. Then a meniscus lens is fabricated on the planar waveguide by TIPE(Ti indiffued proton-exchange) method. A plano-convex lens is also fabricated on the same substrate to compare the spot size at the focal point. The measured spot size of the meniscus lens is reduced to 59% that of the plano-convex lens. This result shows that the proposed meniscus lens is more effective for optical integrated circuits than the plano-convex lens.

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Different crystalline properties of undoped-GaN depending on the facet of patterns fabricated on a sapphire substrate

  • Lee, Kwang-Jae;Kim, Hyun-June;Park, Dong-Woo;Jo, Byoung-Gu;Kim, Jae-Su;Kim, Jin-Soo;Lee, Jin-Hong;Noh, Young-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.173-173
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    • 2010
  • Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

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Radiation Efficiency Improvement of RFID Tag Antenna for Metallic Objects Printed on Lossy Substrate (손실 기판을 이용한 금속 부착형 RFID 태그 안테나의 복사 효율 향상)

  • Son, Hae-Won;Choi, Won-Kyu;Choi, Gil-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.11
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    • pp.1265-1271
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    • 2008
  • In this paper, we propose a new antenna design method for RFID tass on metallic surfaces using a low-cost, high-loss substrate such as FR4. The proposed design method highly reduces the substrate loss due to its dielectric loss, and so improves the radiation efficiency of the tag antenna more than double compared with a conventional PIFA(planar inverted-F antenna). The equivalent circuit model of the antenna according to the proposed method was established and its characteristics were analyzed systematically in this paper. The excellency of the proposed design method was verified by the fabrication and measurement of a prototype antenna.

X-Band Oscillator Using SIW Cavity Resonator Based on Planar Circuit Technique (평면회로 기법에 의한 SIW Cavity 공진기를 이용한 X-밴드 발진기)

  • Lee, Hyun-Wook;Lee, Il-Woo;Nam, Hee;Lee, Jong-Chul
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.7 no.1
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    • pp.68-74
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    • 2008
  • The substrate integrated waveguide (SIW) structure can be approximated as the rectangular waveguide using common dielectric substrate with via-holes. To realize reflection-type resonator, $50-{\omega}$ microstrip line can be used for coupling with the center plane of the cavity. The oscillator is designed to operate at 9.45 GHz using the reflection-type SIW cavity resonator. The phase noise of oscillator shows -98.1dBc/Hz at 100 KHz offset. In experiment, the reflection type SIW cavity resonator improves the loaded quality factor making the low phase noise oscillator possible. Due to the entirely planar structure of this resonator, this technique can also be adequate in oscillator applications for a low cost and low phase noise performance.

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New Fabrication method of Planar Micro Gas Sesnor Array (집적도를 높인 평면형 가스감지소자 어레이 제작기술)

  • 정완영
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.727-730
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    • 2003
  • Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

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A wideband balun of tapered structure using planar microstrip

  • Chang, Tae-Soon;Chang, Rae-Kim;Hur, Jung
    • Proceedings of the Korea Society of Information Technology Applications Conference
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    • 2005.11a
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    • pp.35-38
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    • 2005
  • In this paper, a wideband balun of tapered structure using planar microstrip is desigde ad analyzed. The balun structure was fabricated on a Teflon substrate with a thickness of 0.8mm and relative dielectric constant ${\varepsilon}_r$ of 2.5. Two back-to back CPW-to-CPS transitions were simulated and optimized using HFSS. A movel plaar balun using tapered structure of microstip to CPW is suggested and designed. The measurement result, the bandwidth for a reflection coefficient better than -10dB of the balun is 2GHz to 8GHz. The planar balun can improved the performance of wide band spiral antenna.

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Liquid crystal alignment on patterned-alignment films

  • Lias, Jais Bin;Oo, Thet Naing;Yazawa, Tomohiro;Kimura, Munehiro;Akahane, Tadashi
    • Journal of Information Display
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    • v.12 no.2
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    • pp.101-107
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    • 2011
  • To come up with a bistable liquid crystal (LC) device using unpolarized UV light, single-step laser patterning on a photoalignment layer using a photomask was proposed to achieve an equilibrium configuration of LC molecules in contact with a periodically patterned substrate. The patterns were formed by stripes of alternating random planar and homeotropic anchoring on a submicrometer scale in the order of $0.5{\mu}m$. Two possible configurations of bistable LC cells that can be obtained by combining a micropatterned surface formed with alternating random-planar- and homeotropic-alignment with planar- or homeotropic-alignment surfaces were proposed. The alignment properties of the two proposed models were investigated, along with the microscopic switching behavior of micropatterned nematic LC cells.

Liquid Cooling System Using Planar ECF Pump for Electronic Devices (평면형 ECF 펌프를 이용한 전자기기 액체냉각 시스템)

  • Seo, Woo-Suk;Ham, Young-Bog;Park, Jung-Ho;Yun, So-Nam;Yang, Soon-Young
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.12
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    • pp.95-103
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    • 2007
  • This paper presents a liquid cooling concept for heat rejection of high power electronic devices existing in notebook computers etc. The design, fabrication, and performance of the planar ECF pump and farced-liquid cooling system are summarized. The electro-conjugate fluid (ECF) is a kind of dielectric and functional fluids, which generates jet flows (ECF-jets) by applying static electric field through a pair of rod-like electrodes. The ECF-jet directly acts on the working fluid, so the proposed planar ECF pump needs no moving part, produces no vibration and noise. The planar ECF pump, consists of a pump housing and electrode substrate, achieves maximum flow rate and output pressure of $5.5\;cm^3/s$ and 7.2 kPa, respectively, at an applied voltage of 2.0 kV. The farced-liquid cooling system, constructed with the planar ECF pump, liquid-cooled heat sink and thermal test chip, removes input power up to 80 W keeping the chip surface temperature below $70\;^{\circ}C$. The experimental results demonstrate that the feasibility of forced-liquid cooling system using ECF is confirmed as an advanced cooling solution on the next-generation high power electronic devices.

Array Mode Characteristics of Channeled-Substrate-Planar Phase Laser Arrays (CSP 레이저 어레이의 결합모드 특성)

  • ;吳煥述
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.936-943
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    • 1986
  • The lasing wavelengths and gain characteristics of the array modes of channel-substrate planar(CSP) lasers are presented. The gain values of array modes are determined from the complex coupling coefficients calculated using the fields of neighborig elements of the array. The computations show that for index guided lasers which have fields that are almost real valued, or have only slight phase curvature, the highest order array mode will have preferred oscillation. The inphase or fundamental mode, which produces only one major lobe in the far-field radiation pattern, will have the lowest modal gain of all array modes. Some of the devices discussed have modal gain differences of less than 10 cm**-1 between the highest and fundamental modes. For optical field confinement factors of about 20%, this gain difference corresponds to avtive layer gains of approximately 50**-1.

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