• 한국세라믹학회지
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• 제55권1호
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• pp.50-54
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• 2018

This study investigated the long-term durability of catalyst(Pd or Fe)-infiltrated solid oxide cells for $CO_2$/steam co-electrolysis. Fuel-electrode supported solid oxide cells with dimensions of $5{\times}5cm^2$ were fabricated, and palladium or iron was subsequently introduced via wet infiltration (as a form of PdO or FeO solution). The metallic catalysts were employed in the fuel-electrode to promote $CO_2$ reduction via reverse water gas shift reactions. The metal-precursor particles were well-dispersed on the fuel-electrode substrate, which formed a bimetallic alloy with Ni embedded on the substrate during high-temperature reduction processes. These planar cells were tested using a mixture of $H_2O$ and $CO_2$ to measure the electrochemical and gas-production stabilities during 350 h of co-electrolysis operations. The results confirmed that compared to the Fe-infiltrated cell, the Pd-infiltrated cell had higher stabilities for both electrochemical reactions and gas-production given its resistance to carbon deposition.

• 한국결정성장학회지
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• 제10권4호
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• pp.297-301
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• 2000

H와 Li의 양자교환법에 의해 평면도파로와 channel도파로를 $LiNbO_3$단결정 기판위에 구현하였다. 양자원으로 피로인산을 사용하였고 평면도파로의 모드들에 대한 유효굴절률을 측정하였으며 반응시간과 반응온도로부터 광도파로의 깊이와 계단형 형태의 굴절률 변화에 대한 식을 구하였다. 이 식에서 구한 단일모드 도파 조건으로 channel 도파로를 제작하였고 입사광의 제한 효과를 관찰하였다.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.188-192
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• 2000

In this study PZT etching was performed using planar inductively coupled Ar/Cl$_2$/BCI$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$. X-ray photoelectron spectroscopy(XPS) analysis for films composition of etched PZT surface was utilized. The chemical bond of PbO is broken by ion bombardment and Cl radical, and the peak of metal Pb in a Pb 4f narrow scan begins to appear upon etching. As increasing additive BCl$_3$content the relative content of oxygen decreases rapidly in contrast with etch rate of PZT thin film. So we though that the etch rate of PZT thin film increased because abundant B and BCl radicals made volatile oxy-compound such as B$_{x}$/O$_{y}$ and/or BClO$_{x}$ bond. We achieved etch profile of about 80$^{\circ}$ at Ar(20)/BCl$_3$(80) gas mixing condition and substrate temperature of 8$0^{\circ}C$TEX>X>.

• 전기학회논문지
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• 제64권5호
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• pp.739-745
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• 2015

In this paper, a flexible wireless power receiving system is proposed for wearable device applications. The proposed system is designed with printable component configuration to be integrable to textile material. While the defected ground structures(DGSs) are utilized for planar printable filter designs, direct impedance matching technique is considered for flexible circuit performance. The proposed system has been implemented on a flexible substrate with a thickness of 5 mils, and experimented for power conversion efficiencies and converted voltages. In order to evaluate the hardware flexibility, the system performance are measured a bended circuit board at a radius of curvature of 5 cm. The system performance is analyzed for the degradation due to the curvature. The proposed system has shown the excellent capability of far-field wireless power transfer systems in flexible device environments.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• 한국전자파학회논문지
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• 제16권2호
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• pp.204-210
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• 2005

본 논문에서는 RFID 칩 실장이 용이한 접지면이 첨가된 평면형 미엔더 형태의 평면형 다이폴 안테나를 이용 하여 UHF 대역에서 동작하는 RFID 태그용 안테나를 제안하였다. 태그의 크기를 명함 크기로 구현하기 위해서 안테나는 meander 형태로 구현하였으며, 안테나의 특성 개선을 위하여 T-정합법을 사용하였고, RFID 칩 실장이 용이한 구조를 구현하기 위해서 접지면을 첨가하였다. 논문에서 제안한 방법을 통하여 구현한 안테나의 크기는 $100\times60\;mm^2$이고, 유전체는 FR4를 사용하였다. 실험 결과 방사 패턴은 다이폴 안테나와 같이 전 방향(omnidirectional) 특성이며, 중심 주파수는 427 MHz, -10 dB 반사 손실 대역폭은 8 MHz, 최대 반사 손실은 21 dB이다. 따라서 본 논문에서 제안한 방법을 이용하여 RFID 칩 실장이 용이한 RFID 태그용 안테나를 구현할 수 있다.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국재료학회지
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• 제9권3호
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• pp.257-262
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• 1999

MOCVD를 이용하여 $SiO_2$로 패턴된 GaN/sapphire 기판상에서 $NH_3$유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. $NH_3$유량을 500~1300sccm, 성장온도를 $950~1060^{\circ}C$로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다.$NH_3$유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 미치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, $45^{\circ}$로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 {1101}으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다.

• 한국항행학회논문지
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• 제23권1호
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• pp.69-76
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• 2019

본 논문에서는 평면 유전체 기판의 유전율 측정을 위해 마이크로스트립 결함 접지구조를 기반으로 한 고감도 마이크로파 센서의 설계 방법에 대하여 연구하였다. 제안된 센서는 H-모양 개구의 리지 구조를 커패시터 기호 모양으로 변형하여 설계하였다. 제안된 센서의 감도를 기존의 이중 링 상보형 분할 링 공진기를 기반으로 한 센서의 감도와 비교하였다. 두 센서는 피 시험 기판이 없는 상태에서 전송 계수가 1.5 GHz에서 공진하도록 0.76 mm 두께의 RF-35 기판 상에 설계하고 제작하였다. 피 시험 기판으로 비유 전율이 2.17에서 10.2 범위에 있는 타코닉 기판 5종을 선택하였다. 실험 결과, 전송계수 공진주파수의 이동으로 측정된 제안된 센서의 감도는 기존 이중 링 상보형 분할 링 공진기를 기반으로 한 센서와 비교할 때 1.31배에서 1.62배 증가하는 것을 확인하였다.