• 한국전자파학회논문지
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• 제26권1호
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• pp.24-29
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• 2015

본 논문에서는 고투자율 자성기판을 이용한 광대역 안테나 격리도 특성 개선방법을 제안하였다. 제안된 안테나는 평판형 모노폴 안테나의 근접 자계 분석을 바탕으로 고투자율 자성기판을 안테나에 삽입한 형상이며, 동작주파수에서의 안테나 성능을 유지하고, 차단 주파수에서의 간섭을 최소화하여 근접한 안테나와의 격리도 특성을 개선한다. 격리도 개선을 확인하기 위해 동작주파수 2 GHz인 기준 모노폴 안테나를 설정하여 제안된 안테나와 기준 안테나의 $S_{21}$을 자성기판 삽입 전후로 측정하였다. 그 결과, 기존 안테나의 동작 성능은 유지하며, 2 GHz 이상의 차단 주파수에서 $S_{21}$이 5~10 dB 이상 개선되었으며, 고투자율 자성기판을 이용하여 안테나의 격리도 특성 개선이 가능함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.35-38
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• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.404-408
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• 1999

Gallium doped zinc oxide(GZO) films were deposited on soda-lime glass substrates without substrate heating $(T_s<50^{\circ}C$) by dc planar magnetron sputtering using GZO ceramic oxide targe with different inert gas (Ar, or Ne). For the GZO films deposited under different total gas pressure $(P_{tot})$, structural and electrical properties were investigated by XRD and Hall effect measurements. Crystallinity of GZO films deposited using Ar was degraded with increase in $(P_{tot})$, suggesting that it was heavily affected by kinetic energy of sputtered Zn particles$(PA_{zn})$ arriving at substrate surface. Whereas, crystallinity of GZO films deposited at lower Ptot than 3.0 Pa using Ne gas was degraded with decrease in $(P_{tot})$. This degradation was considered to be result of film damage caused by the bombardment of high-energy neutrals ($Ne^{\circ}$). On the basis of a hard sphere collision processes, the average final energy of particles (sputtered Zn, $Ar^{\circ}$and $Ne^{\circ}$)arriving at substrate surface were estimated.

• 한국표면공학회지
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• 제28권6호
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.287-290
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• 2003

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

• 한국표면공학회지
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• 제32권3호
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• pp.467-471
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• 1999

BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of $sp^2$ bond of BN decreased and that of $sp^3$ bond of c-BN increased with increasing pulsed DC bias voltage applied to substrate. The initially grown layer at the interface was observed by TEM and considered to be of$ sp^2$-bonded BN. The cross-sectional and planar TEM micrographs show that the upper layer on the initial layer was the single phase c-BN. It is concluded that cubic boron nitride films could be synthesized by ME-ARE process with pulsed DC biasing.

• 한국정보통신학회논문지
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• 제17권9호
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• pp.1996-2002
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• 2013

본 논문에서는 코플래너 도파관으로 급전되는 소형 광대역 평면 모노폴 안테나의 설계방법에 대해 연구하였다. 제안된 구조의 광대역 모노폴을 지상파 디지털방송 수신용으로 최적화 설계하였다. 모노폴과 접지면을 광대역 특성을 갖도록 완만한 테이퍼 구조로 하였다. 모노폴과 접지면에 슬릿을 장하하여 안테나를 소형화하였다. 광대역 모노폴은 특성 임피던스 75옴의 코플래너 도파관으로 급전되고 $100mm{\times}200mm$ 크기의 FR4 기판에 설계하였다. 디지털 방송 주파수 대역인 470-806 MHz 대역에서 동작하도록 설계된 안테나를 FR4 기판 상에 제작 후 실험을 통하여 연구결과의 타당성을 검증하였다.

• 한국광학회지
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• 제9권3호
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• pp.156-161
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• 1998

에어로졸 화염증착법을 개발하고 이 방법을 써 실리콘 기판 위에 Pyrex 무응력 도피박막으로 제작하였다. 파이렉스 도파 박막계의 굴절률은 조절하기 위하여 지르코늄을 첨가하였으며, 지르코늄 함량이 0wt%부터 3wt5까지 변하는 경우 굴절률이 1.460부터 1.475까지 변화하였다. 파이렉스 도파로의 평판도파로형 광증폭기에 응용 가능성을 보기 위하여 어븀을 첨가하여보았으며 어븀 함량이 0wt%부터 1wt% 까지 변하는 경우 박막의 굴절률이 1.460부터 1.465 까지 변화함을 확인하였다. 프리즘 커플러를 써서 제작된 도피피막에 과을 여기시킨 결과 광집적회로에 응용이 가능한 수준의 투과성이 우수한 박막임을 확인하였다. 파이렉스 도피피막의 편광 변화에 따른 박막굴절률의 변화는 2$\times$104이하로 측정되었다.

• ETRI Journal
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• 제25권2호
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• pp.73-80
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• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• 한국전자파학회논문지
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• 제8권3호
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• pp.243-253
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• 1997

차량과 같은 지상 이동체 통신에서는 안테나에 도래하는 입사전파가 안테나의 수직평변면에 대해서 약 $60^{\circ}$ 정도 의 낮은 입사각을 가지므로 이를 효과적으로 수신할 수 있는 평면형 안테나를 제작하고 그 특성을 고찰하였다. 유전체 덮개층 효과를 이용한 설계를 하여 안테나의 기판층을 포함한 평면에서의 방사계가 영이 되지 않도록 함으로써 이러한 안테나의 설계가 가능하다. 주파수 1.2 GHz에서 70 MHz 정도의 대역폭을 갖고 저각도 입사전파를 수신할 수 있는 소형 마이크로스트립 안테나를 구현하였다.