• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.276-278
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• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.8
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• pp.3842-3855
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• 2018

A novel image completion method is proposed that uses the advantage of planar structural information to fill corrupted portions of an image. First, in estimating parameters of the projection plane, the image is divided into several planes, and their planar structural information is analyzed. Second, in calculating the a priori probability of patch and patch offset regularity, this information is converted into a constraint condition to guide the process of filling the hole. Experimental results show that the proposed algorithm is fast and effective, and ensures the structure continuity of the damaged region and smoothness of the texture.

• Journal of the Optical Society of Korea
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• v.8 no.3
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• pp.137-146
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• 2004

A new method of obtaining the eigenmode of an anisotropic planar waveguide is studied. The planar waveguide can be composed of an arbitrary number of isotropic or uniaxially anisotropic layers, provided all the optical axes arc lying in the incidence plane. Since the equation of motion for the TE mode is not different from that for the TE mode in an isotropic planar waveguide, only the equation of motion for the TM mode is of any concern. For this kind of device structure, the Maxwell's equations can be solved for one component of the electric field and one component of the magnetic field. The resulting coupled set of equations is linear in the propagation constant and the eigenmode can be easily obtained using canned numerical routines.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1998.10a
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• pp.255-262
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• 1998

This paper presents a translation, rotation and scale invariant methodology for the recognition of closed planar shape images using the bispectrum of a contour sequence and the learning vector quantization(LVQ) neural classifier. The contour sequences obtained from the closed planar images represent the Euclidean distance between the centroid and all boundary pixels of the shape, and are related to the overall shape of the images. The higher order spectra based on third order cumulants is applied to tihs contour sample to extract fifteen bispectral feature vectors for each planar image. There feature vector, which are invariant to shape translation, rotation and scale transformation, can be used to represent two0dimensional planar images and are fed into a neural network classifier. The LVQ architecture is chosen as a neural classifier because the network is easy and fast to train, the structure is relatively simple. The experimental recognition processes with eight different hapes of aircraft images are presented to illustrate the high performance of this proposed method even the target images are significantly corrupted by noise.

• Journal of electromagnetic engineering and science
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• v.12 no.2
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• pp.155-160
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• 2012

A wideband circularly polarized pinwheel-shaped planar monopole antenna fed by a wideband feeding network is presented in this paper. The proposed antenna is formed by four wideband planar monopole antenna elements with aquadruple feeding network in order to improve the performance of circular polarization. Additionally, the antenna, which is introduced here, has a high gain in the z axis direction because of its folded antenna structure. The attractive characteristics of the proposed antenna are the wide impedance bandwidth of 87.3 % (1 GHz to 2.55 GHz), the 3 dB axial ratio (AR) bandwidth of 92.3 % (1.05 GHz to 2.85 GHz), and the maximum gain within the 3 dB AR bandwidth is about 8.24 dBic.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.376-382
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• 1994

In this study we developed a program(DEVSIM) to simulate the two dimensional distribution of the electrostatic potential and the electric field of the arbitrary structure consisting of GaAs/AlGaAs semiconductor and metal as well as dielectric. By the comparision of the electric field distribution of GaAs MESFETs with the various recess gates we proposed a suitable device structure to improve the breakdown characteristics of MESFET. According to the results of simulation the breakdown characteristics were improved as the thickness of the active epitaxial layer was decreased. And the planar structure, which had the highly doped layer under the drain for the ohmic contact, was the worst because the highly doped layer prevented the space charge layer below the gate from extending to the drain, which produced the narrow spaced distribution of the electrostatic potential contours resulting in the high electric field near the drain end. Instead of the planar structure with the highly doped drain the recess gate structure having the highly doped epitaxial drain layer show the better breakdown characteristics by allowing the extention of the space charge layer to the drain. Especially, the structure in which the part of the drain epitaxial layer near the gate show the more improvement of the breakdown characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4126-4130
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• 2012

In this paper, we proposed planar spiral inductors based on AC coupling for high-frequency wireless signal transmission. Design and characteristics of various structures of the inductor were analyzed. Capacitance between the inductors can be reduced by positioning two thin-film inductors in parallel. So two structures were proposed. First structure is inter-diagonal structure. This structure was made not to overlap the wire part of the paralleled two inductors. Second structure is On-chip type structure that the two thin-film inductors were in parallel but located on diagonal line not to face each other. The resonance in this structure was reduced from twice to once by increasing horizontal distance between the two thin-film inductors, because the capacitance effect between the two thin-film inductors decreases when the distance between the two inductors increases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.8
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• pp.576-582
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• 2018

In this paper, a planar equi-phase power divider is proposed using fixed phase shifters. As the integrability of a phased array antenna increases for accurate beam steering, a conventional method to excite equi-phase signals to all element antennas, extending the feedline, has spatial limitations. Therefore, the planar equi-phase power divider is designed using a defected ground structure with a planar phase shift function without intentional feedline extension. The defected ground structure has been considered for a low insertion loss and a controllable phase shift, whereas the power divider has been designed and implemented with a port-to-port isolation and a planar configuration.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.119-126
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• 2016

In this paper, we proposed the planar textile resonator for constructing wearable MR-WPT system and analyzed the characteristic of textile substrates used in resonators. The planar textile resonators were designed to resonate at 1-10 MHz. The loop and coil were fabricated planar structure on textile substrate using conductive materials. Polyester fiber and cotton widely used in real life were chosen as textile resonators for wearable applications and copper tape and silver paste were used for fabricating planar loop and coil on textile substrate. For comparison analysis on transfer efficiency according to the types of textile, transmitter and receiver parts were symmetric. According to the result, for the highest transfer efficiency of wearable WPT system, the planar resonators have specifications of relative thick textile substrate with low permittivity and low surface resistance of conductive pattern. The performed experiments show that the planar textile resonator is possible to be used for resonator in wearable MR-WPT system.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2247-2254
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• 2010

The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to $300^{\circ}C$ and $450^{\circ}C$ of $(NH_4)_2S_x$-treated InAs(100) substrates produces a ($1{\times}1$) and ($2{\times}1$) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the $\alpha$-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-($1{\times}1$) layer, however, the $\alpha$-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.