• Title/Summary/Keyword: Pizoelectric

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a study on the Electrical and acoustical properties of PZT ceramic. (PZT 계 압전세라믹스의 전기 및 음향특성에 관한 연구)

  • Kim, S.J.;Kim, H.G.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.333-334
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    • 1989
  • Electrically active part of the piezoelectric sound element is a ceramic thin circular disk cemented to a metal base plate (using a type of thermosetting epoxy). The active part is a thin lead zirconate titanate disk (PZT). The piezoelectric sound element is so dimensioned that its basic resonance frequency is approximately if the center of the audible frequency band: This frequency is mainly determined by the geometry and the sort of the metal base plate materials. In this study, four kinds of PZT ceramic and two classes of thin metal base plate were prepared. It is observed that dielectric and pizoelectric properties relate to acoustical properties (particularly sound pressure level).

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The Driving Method of Power Switching Device Using Pizoelectric Transformer (전력 Switching 소자를 압전트랜스로 구동하는 방법)

  • Hwang, Min-Kyu;Lee, Sang-Kyun;Lee, Jae-Choon;Choi, Joon-Young
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1324-1326
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    • 1998
  • To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

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Effect of Interface Porosity on the Dielectric and Piezoelectric Properties of 0-3 Type-Polymer Composites (O-3형 PZT-폴리머 복합체 제조시 압전 복합체내의 경계 기공이 유전, 압전 특성에 미치는 영향)

  • 이형규;천재일;김호기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.10a
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    • pp.21-26
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    • 1988
  • Composition with O-3 connectivity were fabricated from PZT and phenolic resin powders. These composites were investigated for dielectric and pizoelectric properties with PZT-polymer interface porosity variation. The interface porosity dependence of dielectric and piezoelectric properties was especially discussed by porosity factors. The interface porosity dependence of piezoelectric constant was larger than that of dielectric constant. It was considered that the interface pore plays the role of a stress buffer. Thus the local stress applied on PZT particles in the composite was remarkably diminish.

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The Driving Method of Power Switching Device Using Pizoelectric Transformer (전력 Switching 소자를 압전트랜스로 구동하는 방법)

  • Hwang, Min-Kyu;Lee, Sang-Kyun;Lee, Jae-Choon
    • Proceedings of the KIEE Conference
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    • 1998.07g
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    • pp.2458-2460
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    • 1998
  • To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

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Elastodynamic Control of Industrial Robotic Manipulators Using Piezoelectric Materials (압전재료를 이용한 산업용 로보트 매니퓰레이터의 동탄성 제어)

  • Choi, S.B.;Cheong, C.C.;Choi, I.S.;Lee, T.H.
    • Journal of the Korean Society for Precision Engineering
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    • v.10 no.4
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    • pp.54-63
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    • 1993
  • This paper presents the dynamic modeling and control methodology to arrest structural deflections of industrial robotic manipulators featuring elastic members retrofitted with surface bonded pizoelectric actuators and sensors. The cynamic modeling is accomplished by employing a variational theorem, prior to developing a finite element formulation. This finite element formulation accounts for both original robot member elements and also bonded piezoelectric material elements. The governing equation of motion is then modified by condensing the electric potential vectors and subsequently two different negative velocity feedback controllers are established; a constant-gain feedback controller and a constant- amplitude feedback controller. By adopting a Model P50 articulating industrial robot manufactured by Gerneral Electric Company, conputer simulations are underlaken in order to demonstrate superior performance characteristics to be accrued from this proposed methodology such as smaller deflections at the end-effector.

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The Piezoelectric and Dielectric Properties of PZT-PMFW Piezoelectric Ceramics (PZT-PMFW 압전 세라믹의 압전 및 유전 특성)

  • 이종섭;이문주;이용희;정수현;임기조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.689-692
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    • 2001
  • In this paper, the pizoelectric and dielectric properties of 0.95Pb(ZrxTil-x)O$_3$- 0.05Pb(Mn$\_$0.2/Fe$\_$0.4/W$\_$0.4/)O$_3$piezoelectric ceramics is investigated as a function of Zr/Ti mole ratio. Also, MPB(Morphotropic Phase Boundary) and optimal sintering temperature is studied using XRD and SEM. As a results, when Zr/Ti mole ratio is 52/48, electromechanical coupling factor, k$\_$p/, is 58[%], permittivity, $\varepsilon$$\^$T/$\_$33//$\varepsilon$0, is 1360 and piezoelectric strain constant, d$\_$33/ is 265[pC/N] and the piezoelectric and dielectric properties become maximum. Phase transition temperature of its ternary piezoelectric system is about 350[$^{\circ}C$]. From the XRD analysis, when Zr/Ti mole ratio is 52/48, tetragonal phase transits to rhombohedral phase. Also, From measuring results of the sintering density, when sintering temperature is 1050[$^{\circ}C$], sintering density become maximum and is about 7930[kg/㎥], and average grain size is about 2-3[$\mu\textrm{m}$].

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The Frequence Band on the Pizoelectric Characteristic of the Piezoelectric Ceramic Filter (압전 세라믹 필터의 압전 특성에 의한 대역폭 의존성에 관한 연구)

  • Lee, S.H.;Seok, J.Y.;Ha, S.J.;Ryu, G.H.;Kim, H.G.;Yoo, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.613-617
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    • 2002
  • The ceramic filters were developed using technology similar to that of quartz crystal and electromechanical filter. However, the key to this development involved the theoretical analysis of vibration modes and material improvements of piezoelectric ceramics. The primary application of ceramic filters has been for consumer-market use. Accordingly, a major emhpasis has involved mass production technology, leading to low-priced devices. A typical ceramic filter includes monolithic resonators and capacitors packaged in unique configurations. Nakazawa developed a double-mode resonator as two acoustically coupled single resonators. And he developed 10.7MHz crystal filters using multi-energy trapping mode of thickness shear vibration. He succeeded in realizing a two-pole band pass filter response without external inductance by splitting a dot electrode to creat coupled symmetric and antisymmetric vibration modes. Accordingly, the simulation for ceramic filter were important. So that, this paper were investigated the pass frequency of filter on the electrode length and thickness of ceramic.

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Design and Evaluation of Ultrasonic Flowmeter for High Temperature Using Finite Element Method (유한요소법을 이용한 고온용 초음파 유량센서의 설계 및 평가)

  • Lee, Joo-Hee;Kim, Chang-Il;Kim, Chul-Min;Paik, Jong-Hoo;Cho, Jeong-Ho;Jeon, Myeong-Pyo;Jeong, Young-Hun;Lee, Young-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.19-19
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    • 2010
  • 현재 산업에서 높은 정밀성과 설치의 간편함으로 이용량이 증가하고 있는 초음파 유량계는 압전진동자를 사용하여 측정을 한다. 일반적으로 초음파 유량계에서 초음파를 발생하고 수신하는 압전 세라믹 진동자의 경우 대부분 $200^{\circ}C$ 이상의 고온에서는 사용이 불가능하다. 따라서 고온에서의 이용을 위한 사용가능 온도의 영역을 개선하기 위한 조성이나 구조적인 변화가 필요하였고, 조성변화에 있어서는 한계가 있기 때문에 구조 측면에서 접근하고자 하였다. 초음파 유량계의 구조에 있어 외접형 도파관 방식을 선택하였으며, 도파관의 길이, 방열판의 개수, 재질 등의 변수에 대하여 시뮬레이션을 하였다. 시뮬레이션 결과를 바탕으로 얻어진 결과에 대하여 샘플을 제작하였으며, 압전 진동자에 도달되는 온도를 평가 하였을 시 방열판에 대한 온도감소효과를 얻을 수 있었다.

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Dielectric and Piezoelectric Properties of Low Temperature Sintering PSN-PZT Ceramics with CeO2 Addition (CeO2첨가에 따른 저온소결 PSN-PZT세라믹스의 유전 및 압전 특성)

  • 류주현;정광현;정영호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.481-485
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    • 2004
  • 0.91 (PSN-PZT) -0.05BF -0.04PNW+0.3wt%MnO$_2$+0.6wt%CuO+xwt%CeO$_2$ ceramics were fabricated with the variations of CeO$_2$addition at the sintering temperature of 95$0^{\circ}C$ and their microstructure, dielectric and piezoelectric characteristics were investigated. As the amount of CeO$_2$ addition increased, the grain size, density and electromechanical coupling factor(k$_{p}$) were increased and the mechanical quality factor(Q$_{m}$ ) was decreased. At the 0.3 wt% CeO$_2$, the density, grain size, electromechanical coupling factor(k$_{p}$), and pizoelectric constants(d$_{33}$, g$_{33}$) showed the maximum value of 7.87 g/㎤, 3.22 $\mu\textrm{m}$, 0.5, 289 pC/N, and 22.2 ㎷ㆍm/N, respectively. However, mechanical quality factor(Q$_{m}$ ) showed the minimum value of 807 at the 0.5 wt% CeO$_2$.$.EX>.EX>.

Deposition and characterization of ZnO thin films for piezo-electric devices (압전 소자용 ZnO 박막의 증착 및 물성 분석)

  • Lee, Jin-Bock;Kim, Kwi-Hyun;Shin, Yang-Ho;Seo, Soo-Hyung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.959-961
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    • 1999
  • ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

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