• 제목/요약/키워드: Pixel array

검색결과 262건 처리시간 0.034초

Co-실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작 (Fabrication of New Co-Silicided Si Field Emitter Array with Long Term Stability)

  • 장지근;김민영;정진철
    • 한국재료학회지
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    • 제10권4호
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    • pp.301-304
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    • 2000
  • Si FEA로 부터 tip의 표면을 Co 금속으로 silicidation한 새로운 3극형 Co-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. $10^{-8}Torr$의 고진공상태에서 제작된 소자의 단위 pixel(pixel 면적 : $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$, tip 어레이 : $45{\times}45$)를 통해 측정된 turn-on 전압은 약 35V로, 아노드 전류는 $V_A=500V,\;V_G=55V$ 바이어스 아래에서 약 $1.2{\mu\textrm{A}}(0.6nA/tip)$로 나타났다. 제작된 소자는 초기 과도상태를 제외하면 장시간의 동작을 통해 전계방출 전류의 감소없이 매우 안정된 전기적 특성을 나타내었다. Co-silicided Si FFA 의 낮은 turn-on 전압과 높은 전류안전성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안전성과 낮은 일함수에 기인하는 것으로 판단된다.

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방사선 노출에 따른 3T APS 성능 감소와 몬테카를로 시뮬레이션을 통한 픽셀 내부 결함의 비교분석 (A Comparison between the Performance Degradation of 3T APS due to Radiation Exposure and the Expected Internal Damage via Monte-Carlo Simulation)

  • 김기윤;김명수;임경택;이은중;김찬규;박종환;조규성
    • 방사선산업학회지
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    • 제9권1호
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    • pp.1-7
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    • 2015
  • The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

육각형 렌즈 어레이로부터 요소영상을 생성하기 위한 병렬 처리 기법 (Parallel Processing Method for Generating Elemental Images from Hexagonal Lens Array)

  • 김도형;박찬;정지성;권기철;김남;류관희
    • 한국콘텐츠학회논문지
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    • 제12권6호
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    • pp.1-8
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    • 2012
  • 대부분 집적영상 기법에서는 사각형 렌즈 어레이가 사용되고 있으며, 이로 인해 집적된 빛의 분포는 사각격자 형태로 기록된다. 그러나 육각형 렌즈 어레이를 사용하면, 사각형 렌즈 어레이보다 더 높은 밀도의 빛의 분포와 이상적인 원형 렌즈에 가깝게 이미지를 기록 또는 재생 할 수 있다[4]. 육각형 렌즈 어레이 요소영상을 병렬 처리 기법을 사용하여 생성하기 위해서는 요소영상을 구성하는 각 화소에 대하여 그 화소가 속할 육각형 렌즈를 결정해야하고, 이 과정은 화면에 출력되는 모든 화소에 대하여 진행 되며 많은 계산량이 요구된다. 본 논문에서는 3D 볼륨 데이터를 사용하여 육각형 렌즈 어레이에 대한 요소영상을 생성하기 위해 OpenCL를 사용한 병렬 처리 기법을 제안한다. 제안 된 방법을 위한 실험에는 Male [$128{\times}256{\times}256$화소] 볼륨데이터를 사용하였으며, 실험 결과 $20{\times}20$개의 육각형 렌즈 어레이에 대해 요소영상을 초당 20~60장 생성할 수 있었다.

펜타센 TFT와 유기 LED로 구성된 픽셀 어레이 제작 (Fabrication of Pixel Array using Pentacene TFT and Organic LED)

  • 최기범;류기성;정현;송정근
    • 대한전자공학회논문지SD
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    • 제42권12호
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    • pp.13-18
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    • 2005
  • 본 논문에서는 Poly-ethylene-terephthalate (PET) 기판 위에 Organic Thin Film Transistor (OTFT)와 Organic Light Emitting Diode (OLED)를 직렬 연결시킨 픽셀과 64 x 64 픽셀로 구성된 어레이를 제작하여 동작을 시연하였다. OTFT는 PET 기판과의 호환성을 고려하여 Poly 4-vinylphenol을 게이트 절연체로, 펜타센을 활성층으로 사용하여 제작되었다. 개별 소자 수준에서는 이동도가 $1.0\;cm^2/V{\cdot}sec$로 나타났으나, 어레이에서는 $0.1\~0.2\;cm^2/V{\cdot}sec$로 약 10배 정도 감소하였다. 어레이의 동작을 분석하였고 OTFT의 OLED에 대한 전류구동능력을 확인하였다.

실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작 (Fabrication of New Silicided Si Field Emitter Array with Long Term Stability)

  • 장지근;윤진모;정진철;김민영
    • 한국재료학회지
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    • 제10권2호
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    • pp.124-127
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    • 2000
  • Si FEA로부터 tip의 표면을 Ti 금속으로 silicidation한 새로운 3극형 Ti-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. 제작된 소자에서 단위 pixel(pixel area : $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$, tip array : $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$)을 통해 측정된 전계 방출 특성은 $10^8Torr$의 고진공 상태에서 turn-on 전압이 약 70V로, 아노드 방출전류의 크기와 current degradation이 $V_A=500V,\;V_G=150V$ 바이어스 아래에서 각각 2nA/tip와 0.3%/min로 나타났다. 3극형 Ti-silicided Si FEA의 낮은 turn-on 전압과 높은 전류안정성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안정성과 낮은 일함수에 기인하는 것으로 판단된다.

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A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

  • Han, Sang-Wook;Kim, Seong-Jin;Yoon, Eui-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.102-106
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    • 2005
  • A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

14 × 14 섬광 픽셀 배열의 최적의 평면 영상 획득을 위한 광가이드 두께 최적화 (Optimization of Light Guide Thickness for Optimal Flood Image Acquisition of a 14 × 14 Scintillation Pixel Array)

  • 이승재
    • 한국방사선학회논문지
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    • 제16권4호
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    • pp.365-371
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    • 2022
  • PET 검출기에서 매우 우수한 공간분해능을 획득하기 위해, 매우 작은 섬광 픽셀을 사용하여 검출기 모듈을 설계할 경우, 평면 영상에서 섬광 픽셀 배열 가장자리 및 모서리 부분에서의 겹침이 발생한다. 광가이드를 사용함으로써 겹침의 발생을 감소시킬 수 있다. 본 연구에서는 0.8 mm × 0.8 mm × 20 mm의 섬광체를 사용하여 14 × 14 배열로 구성한 후, 3 mm × 3 mm의 SiPM 픽셀이 4 × 4 배열로 구성된 광센서와 조합하고, 겹침의 발생을 감소시키기 위해 사용한 광가이드의 최적의 두께를 도출하였다. 획득한 평면 영상에서 겹침이 주로 발생하는 가장자리 및 모서리 위치의 섬광 픽셀 영상을 바탕으로 정량적 평가를 수행하였다. 정량적 평가는 섬광 픽셀 영상간의 간격과 반치폭을 통해 계산되었으며, 2 mm 두께의 광가이드를 사용하였을 경우 k값이 2.60으로 가장 우수한 영상을 획득한 결과를 보였다. 또한 에너지 스펙트럼을 통해 에너지 분해능을 측정한 결과 2 mm 두께의 광가이드에서 28.5%로 가장 우수한 결과를 나타내었다. 2 mm의 광가이드를 사용할 경우 겹침이 최소화된 가장 우수한 평면 영상과 에너지 분해능을 획득할 수 있을 것으로 판단된다.

Research of Phase Correlation Method for Identifying Quantitative Similarity in Adjacent Real-time Streaming Frame

  • Cho, Yongjin;Yun, Yeji;Lee, Kyou-seung;Oh, Jong-woo;Lee, DongHoon
    • 한국농업기계학회:학술대회논문집
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    • 한국농업기계학회 2017년도 춘계공동학술대회
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    • pp.157-157
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    • 2017
  • To minimize the damage by wild birds and acquire the benefits such as protection against weeds and maintenance of water content in soil, the mulching black color vinyl after seeding should be carried out. Non-contact and non-destructive methods that can continuously determine the locations are necessary. In this study, a crop position detection method was studied that uses infrared thermal image sensor to determine the cotyledon position under vinyl mulch. The moving system for acquiring image arrays has been developed for continuously detecting crop locations under plastic mulching on the field. A sliding mechanical device was developed to move the sensor, which were arranged in the form of a linear array, perpendicular to the array using a micro-controller integrated with a stepping motor. The experiments were conducted while moving 4.00 cm/s speed of the IR sensor by the rotational speed of the stepping motor based on a digital pulse width modulation signal from the micro-controller. The acquired images were calibrated with the spatial image correlation. The collected data were processed using moving averaging on interpolation to determine the frame where the variance was the smallest in resolution units of 1.02 cm. Non-linear integral interpolation was one of method for analyzing the frequency using the normalization image and then arbitrarily increasing the limited data value of $16{\times}4pixels$ in one frame. It was a method to relatively reduce the size of overlapping pixels by arbitrarily increasing the limited data value. The splitted frames into 0.1 units instead of 1 pixel can propose more than 10 times more accurate and original method than the existing correction method. The non-integral calibration method was conducted by applying the subdivision method to the pixels to find the optimal correction resolution based on the first reversed frequency. In order to find a correct resolution, the expected location of the first crop was indicated on near pixel 4 in the inversion frequency. For the most optimized resolution, the pixel was divided by 0.4 pixel instead of one pixel to find out where the lowest frequency exists.

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Analysis of Subwavelength Metal Hole Array Structure for the Enhancement of Quantum Dot Infrared Photodetectors

  • 하재두;황정우;강상우;노삼규;이상준;김종수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.334-334
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    • 2013
  • In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

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INTRODUCTION OF NUC ALGORITHM IN ON-BOARD RELATIVE RADIOMERIC CALIBRATION OF KOMPSAT-2

  • Song, J.H.;Choi, M.J.;Seo, D.C.;Lee, D.H.;Lim, H.S.
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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    • pp.504-507
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    • 2007
  • The KOMPSAT-2 satellite is a push-broom system with MSC (Multi Spectral Camera) which contains a panchromatic band and four multi-spectral bands covering the spectral range from 450nm to 900nm. The PAN band is composed of six CCD array with 2528 pixels. And the MS band has one CCD array with 3792 pixels. Raw imagery generated from a push-broom sensor contains vertical streaks caused by variability in detector response, variability in lens falloff, pixel area, output amplifiers and especially electrical gain and offset. Relative radiometric calibration is necessary to account for the detector-to-detector non-uniformity in this raw imagery. Non-uniformity correction (NUC) is that the process of performing on-board relative correction of gain and offset for each pixel to improve data compressibility and to reduce banding and streaking from aggregation or re-sampling in the imagery. A relative gain and offset are calculated for each detector using scenes from uniform target area such as a large desert, forest, sea. In the NUC of KOMPSAT-2, The NUC table for each pixel are divided as HF NUC (high frequency NUC) and LF NUC (low frequency NUC) to apply to few restricted facts in the operating system ofKOMPSAT-2. This work presents the algorithm and process of NUC table generation and shows the imagery to compare with and without calibration.

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