• Title/Summary/Keyword: Pin Diodes

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fabrication of the Microfluidic LOC System with Photodiode (광 다이오드를 가진 Microfluidic LOC 시스템 제작)

  • 김현기;신경식;김용국;이상렬;김태송;양은경;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1097-1102
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    • 2003
  • In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

CPW-Fed Arbitrary Frequency-Switchable Antenna Using CRLH Transmission Line

  • Lim, Inseop;Lim, Sungjoon
    • ETRI Journal
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    • v.36 no.1
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    • pp.151-154
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    • 2014
  • A novel frequency-switchable antenna that uses PIN diodes and a composite right- and left-handed transmission line (CRLH TL) is proposed. The CRLH TL provides multi-order resonance, including a zeroth-order resonance (ZOR), and its shunt stub determines the ZOR frequency. Thus, the resonant frequency is arbitrarily chosen by lumped chip inductors on the shunt stub. Two prototypes are designed using different chip inductors while maintaining the antenna geometries. Antenna #1 can switch the resonant frequency from 1.8 GHz to 2.3 GHz. Antenna #2 can switch its resonance from 0.9 GHz to 2.3 GHz.

Comparison of Alpha Particle Signals with respect to Incident Direction onto n-Si:H pin diodes

  • Kim, Ho-Kyung;Gyuseong Cho;Hur, Woo-Sung;Lee, Wanno;Hong, Wan-Shick
    • Proceedings of the Korean Nuclear Society Conference
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    • 1996.05d
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    • pp.133-138
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    • 1996
  • For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

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Design of New Attenuator Structure with Quad Spiral sHaped Defected Ground Structure

  • Jeong Yongwoo;ong Young-Joo;Park Hyung-Sik;Ahn Dal
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.5
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    • pp.403-408
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    • 2004
  • We suggest new attenuator design and formula using quad spiral shaped defected ground structure (DGS). Series resistors and quarter wavelength transmission line that has a role of inverter have been synthesized for attenuator design and novel attenuator structure using quad spiral shaped DGS is fabricated, the measurements show good agreement with theoretical anticipations. The suggested attenuator could remove peak of insertion loss graph through various attenuation method. The various attenuations are obtained by attached pin-diodes, 10-15dB attenuation leveling is realized for validity of suggested design.

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Reconfigurable beam steering U-slot patch antenna with high gain for a wireless headset (무선 헤드셋용 고이득 재구성 빔 스티어링 U-slot 패치 안테나)

  • Kang, Seonghun;Yeom, Insu;Jung, Changwon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.9
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    • pp.5796-5800
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    • 2014
  • This paper presents reconfigurable beam steering patch antenna with high gain for a wireless headset. Because existing antenna for wireless communication in headsets has an omni-directional radiation pattern, it has a deleterious effect in the vicinity of the human head. To reduce this effect, this paper proposed an antenna comprised of a U-slot and manufactured on a FR-4 substrate. The antenna operating at the 2.37-2.5 GHz band used a tapered matching method to match the impedance between the feed part and patch part. To implement the beam steering capability, the antenna used two PIN diodes. Using PIN diodes, the antenna presented three states ($S_0$, $S_1$ and $S_2$) in the maximum beam directions of the YZ-plane ($0^{\circ}$, $30^{\circ}$ and $330^{\circ}$, respectively). The peak gains of the antenna in the headset were 4.22-5.15 dBi. The fabricated antenna could communicate efficiently with a wireless headset.

Design of SPA Antenna Using FET Switch for 2.6 GHz (FET 스위치를 이용한 2.6 GHz 용 SPA 안테나 설계)

  • Kang, Hyun-Sang;Park, Young-Il;Yong, Hwan-Gu;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.10
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    • pp.1137-1144
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    • 2012
  • In this paper, a 2.6 GHz switched parasitic array(SPA) antenna is designed to resolve the device interference in the femtocell. The designed SPA antenna structure consists of a central ${\lambda}/4$ monopole antenna as a radiator and surrounding four parasitic elements operating as a reflector or a director depending on the switching state. In addition, open state monopoles around the parasitic elements are placed to improve the directivity. The designed antenna utilizes RF FETs as switching elements instead of conventional PIN diodes, which enables beam steering with a simple structure consuming low power. To select the proper FET switch, the performance of the SPA antenna depending on the switch characteristics is analyzed. The fabricated antenna has 65 mm radius and 35 mm height, which shows about 15 dB front-back-ratio(FBR) at 2.6 GHz and enables eight-directional beam steering.

Design of a 4-bit Digital Phase Shifter in Quasimillimeter Wave Band for Satellite Communication (준밀리미터파대 위성통신용 4-bit 디지털 위상변위기의 설계)

  • 신동환;임인성;김우재;민경일;오승엽
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.3
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    • pp.461-470
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    • 1999
  • This paper presents the description of a 4-bit digital p-i-n diode phase shifter that was designed for quasimillimeter wave band satellite receiver to use in phased-array systems. 180$^{\circ}$ and 90$^{\circ}$ cells are designed in reflection type that consists of a 3-dB rat-race hybrid coupler, 45$^{\circ}$ and 22.5$^{\circ}$ cells are designed in loaded-line type to reduce the size of circuit and the number of diode to be used. The 4-bit phase shifter uses eight p-i-n diodes mounted in the microstrip circuit. The average insertion loss for the 16 phase states is 6.92dB over the 19.8~20.3 GHz band and maximum phase error is 6.2$^{\circ}$ at 20 GHz.

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Macro-Micro Reconfigurable Antenna for Multi Mode & Multi Band(MMMB) Communication Systems (다중 모드 다중 대역(MMMB) 통신 환경을 위한 매크로-마이크로 주파수 재구성 안테나)

  • Yeom, In-Su;Choi, Jung-Han;Jung, Young-Bae;Kim, Dong-Ho;Jung, Chang-Won
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.10
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    • pp.1031-1041
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    • 2009
  • A small microstrip monopole antenna for macro-micro frequency tuning over multiple bands is presented. The meander-shape antenna is fabricated on a conventional printed circuit board(FR-4, $\varepsilon_r=4.4$ and tan $\delta=0.02$). The antenna operates over WiBro(2.3~2.4 GHz) and WLAN a/b(2.4~2.5 GHz/5.15~5.35 GHz) service bands with an essentially constant antenna gain within each service band. Two diodes, a PIN diode and a varactor, are embedded into the antenna for frequency reconfiguration. The PIN diode is used for frequency switching(macro-tuning) between 2 GHz and 5 GHz bands while the varactor is used for frequency tuning(micro-tuning) within the service bands, 2.3~2.5 GHz and 5.15~5.35 GHz. Unwanted resonances between the two frequency bands(2 GHz and 5 GHz) are suppressed by filling up the gaps between the meander lines. The antenna gain is essentially constant and higher than 2 dBi within each service band. The measured performance of the proposed antenna system suggests the macro-micro frequency tuning techniques be useful in reconfigurable wireless communication systems.

Dual Birdcage RF Coil for Leg MR Angiography (하지 MR Angiography를 위한 Dual Birdcage RF 코일)

  • 양윤정;김선경;최환준;김호철;오창현
    • Investigative Magnetic Resonance Imaging
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    • v.1 no.1
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    • pp.75-78
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    • 1997
  • A dual birdcage RF coil is proposed for MRI and MRA of the human leg. The proposed coil c can be used to cover the whole human leg by imaging upper and lower parts of the leg separately. In the conventional leg imaging scheme using a single RF coil, the leg has to be r relocated when changing the position of the RF coil thus causing problems in matching the i images from two sets of coils. When using the proposed dual RF coil, however, only the bed h has to be moved to select the imaging region while only one part of the dual coil is used each t time by using current switching and PIN diodes. The utility of proposed coil has been verified b by volunteer MRI and MRA and the imaging results show that the coil is useful for the clinical MRI and MRA of the leg.

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Characteristics of Amorphous IZO Anode Films for Polymer OLEDs Grown by Box Cathode Sputtering (박스 캐소드 스퍼터로 성장시킨 고분자 유기발광소자용 비정질 IZO 애노드 박막의 특성)

  • Moon Jong-Min;Bae Jung-Hyeok;Jung Soon-Wook;Kim Han-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.552-557
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    • 2006
  • Electrical, optical, surface, and structural properties of amorphous indium-zinc-oxide (a-IZO) grown by box cathode sputtering (BCS) were compared with crystalline indium-tin-oxide (c-ITO) anode films grown by conventional DC sputtering (DCS). Although x-ray diffraction plot of BCS-grown IZO film shows amorphous structure, the optical and electrical properties of a-IZO is comparable to those of c-ITO film. In particular, BCS-grown IZO films shows very smooth surface without defects such as pin hole and cracks because most of the energy of the sputtered atoms was confined in high density plasma region in box cathode gun. Furthermore polymer organic light emitting diodes (POLED) with the a-IZO anode film shows better electrical properties than that of POLED with the c-ITO anode film due to high work function and smooth surface of a-IZO. This suggested that BCS-grown a-IZO film is promising anode materials substituting conventional c-ITO anode in OLED and flexible displays.