• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.148-155
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• 2001

A pressure sensor on the tip of a catheter which is utilized to measure the in-vivo pressure in a human body was fabricated and the characteristic of the pressure sensor as measured. To fit into a catheter with 1 mm caliber, samples of $150\;{\mu}m$(thickness) ${\times}$ (600, 700, 800, 900, 1000) ${\mu}m$(width) ${\times}2\;mm$(length) was fabricated. The thicker face with $450\;{\mu}m$ thickness of SDB wafer was made thin to $134\;{\mu}m$ thickness using KOH etchant and it made possible to fabricate sensor cell with the width shorter than 1 mm. Different to the whitstone bridge sensor, we formed one piezoresistor and one reference resistor in sensor. Therefore there are possibilities of reduction of the sensitivity, then by using the simulation tool ANSYS 5.5.1, the location and the type of the piezoresistor was optimized. Another piezoresistor type of sensor which contain one longitudinal and one transverse piezoresistor was fabricated at the same time, but the sensitivity was not improved very much. To get the output versus the pressure, a constant current source and a implementation amplifier was used. As a result, the maximum sensitivity of the sensor with one piezoresistor was $1.6\;{\mu}V/V/mmHg$.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.55-59
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• 2018

In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.346-355
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• 1997

In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer's specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were$500{\mu}m$, $350{\mu}m$, $100{\mu}m$, and $5{\mu}m$, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6- beam accelerometers were fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.

• Science of Emotion and Sensibility
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• v.24 no.2
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• pp.49-56
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• 2021

In this study, we investigated the necessary mechanical properties of conductive multifilament yarns for fabricating the electrodes of biosignal measurement pressure and stretch textile sensors using embroidery. When electrodes and circuits for smart wearable products are produced through the embroidery process using conductive multifilament yarns, unnecessary material loss is minimized, and complex electrode shapes or circuit designs can be produced without additional processes using a computer embroidering machine. However, because ordinary missionary threads cannot overcome the stress in the embroidery process and yarn cutting occurs, herein, we analyzed the S-S curve, thickness, and twist structure, which are three types of silver-coated multifilament yarns, and measured the stress in the thread of the embroidery simultaneously. Thus, the required mechanical properties of the yarns in the embroidery process were analyzed. In the actual sample production, cutting occurred in silver-coated multifilament rather than silver-coated polyamide/polyester, which showed the lowest S-S curve. In the embroidery process, the twist was unwound through repetitive vertical movement. Further, we fabricated a piezoresistive pressure/tension sensor to measure gauge factor, which is an index for measuring biological signals. We confirmed that the sensor can be applied to the fabrication of embroidery electrodes, which is an important process in the mass production of smart wearable products.