• 비파괴검사학회지
• /
• 제27권4호
• /
• pp.313-320
• /
• 2007

일반적으로 비파괴 검사용 초음파 탐촉자는 PZT를 이용한 압전소자가 많이 이용되어 왔다. 최근 압전특성이 PZT보다 크게 뛰어난 PMN-PT 압전 단결정 재료가 개발되어 초음파를 이용한 비파괴 평가 분야에 폭넓게 활용될 것으로 기대되고 있다. 본 연구는 PMN-PT를 이용하여 발전설비 고감쇠 재료의 비파괴 평가에 적합한 초음파 탐촉자를 개발하기 위하여 수행되었다. KLM 모델을 이용하여 초음파 탐촉자의 특성을 시뮬레이션 하였으며 이를 기반으로 하여 중심주파수 1 및 2.25 MHz PMN-PT 종파용 초음파 탐촉자를 제작하여 상용 초음파 탐촉자와 그 성능을 비교하였다.

• 한국재료학회지
• /
• 제30권7호
• /
• pp.343-349
• /
• 2020

NKN [(Na,K)NbO₃] is a candidate lead-free piezoelectric material to replace PZT [Pb(Zr,Ti)O₃]. A single crystal has excellent piezoelectric-properties and its properties are dependent of the crystal orientation direction. However, it is hard to fabricate a single crystal with stoichiometrically stable composition due to volatilization of sodium during the growth process. To solve this problem, a solid solution composition is designed (Na,K)NbO₃-Ba(Cu,Nb)O₃ and solid state grain growth is studied for a sizable single crystal. Ceramic powders of (Na,K)NbO₃-M(Cu,Nb)O₃ (M = Ca, Sr, Ba) are synthesized and grain growth behavior is investigated for different temperatures and times. Average normal grain sizes of individual specimens, which are heat-treated at 1,125 ℃ for 10 h, are 6.9, 2.8, and 1.6 ㎛ for M = Ca, Sr, and Ba, respectively. Depending on M, the distortion of NKN structure can be altered. XRD results show that (NKN-CaCuN: shrunken orthorhombic; NKN-SrCuN: orthorhombic; NKN-BaCuN: cubic). For the sample heat-treated at 1,125 ℃ for 10 h, the maximum grain sizes of individual specimens are measured as 40, 5, and 4,000 ㎛ for M = Ca, Sr, and Ba, respectively. This abnormal grain size is related to the partial melting temperature (NKN-CaCuN: 960 ℃; NKN-SrCuN: 971 ℃; NKN-BaCuN: 945 ℃).

• 한국전기전자재료학회논문지
• /
• 제15권12호
• /
• pp.1039-1044
• /
• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Smart Structures and Systems
• /
• 제17권6호
• /
• pp.1055-1065
• /
• 2016

An anisotropic ultrasonic transducer is proposed for Lamb wave applications, such as passive damage or impact localization based on ultrasonic guided wave theory. This transducer is made from a PMNPT single crystal, and has different piezoelectric coefficients $d_{31}$ and $d_{32}$, which are the same for the conventional piezoelectric materials, such as Lead zirconate titanate (PZT). Different piezoelectric coefficients result in directionality of guided wave generated by this transducer, in other words, it is an anisotropic ultrasonic transducer. And thus, it has different sensitivity in comparison with conventional ultrasonic transducer. The anisotropic one can provide more information related to the direction when it is used as sensors. This paper first shows its detailed properties, including analytical formulae and finite elements simulations. Then, its application is described.

• Transactions on Electrical and Electronic Materials
• /
• 제17권1호
• /
• pp.29-32
• /
• 2016

Using the various exchange-correlation functionals, such as LDA, GGA-PBE, GGA-PBEsol and GGA-AM05 functionals, first principle studies were conducted to determine the structures of paraelectric and ferroelectric PbTiO₃. Based on the structures determined by the various functionals, the piezoelectric properties of PbTiO₃ are predicted under the density-functional perturbation theory (DFPT). The present prediction with the various GGA functionals are closer to the experimental findings compared to the LDA values. The present DFT calculations using the GGA-PBEsol functional estimate the experimental data more reasonably than the conventional LDA and GGA fucntionals. The GGA-AM05 functional also predicts the experimental data as well as the GGA-PBEsol. The piezoelectric tensor calculated with PBEsol is relatively insensitive to pressure.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.40-43
• /
• 1996

Substrates of SAW filter are mainly single crystal such as LiNbO$_3$, LiTaO$_3$. However, fabrication of crystal is difficult and cost is very high. In this study, crystal was substituted for piezoelectric ceramics which has simple fabrication process. The same SAW filter mask was photolithographed on crystal(LiNbO$_3$) substrate and ceramic(PZT4, PZT5A and PZT8) substrate in order to compare experimental value with theoretical value. The difference of center frequency was only 3.7%. PZT8 showed good bandwidth properties. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than PZT4, PTT5A.

• 한국결정성장학회지
• /
• 제10권6호
• /
• pp.394-399
• /
• 2000

Langasite (LGS) is a material hoped to meet needs required of new base materials for future communication devices (e.g.SAW filters). In this study, synthesis of new materials was pursued by developing new compounds with the host structure of Langasite in hopes to obtain materials with improved characteristics; compounds including $La_3$$Ta_{0.5}$$Ga_{5.5}$$O_{14}$(LTG)and $La_3$$Nb_{0.25}$$Ta_{0.25}$$Ga_{5.5}$$O_{14}$(LNTG) were synthesized by solid state reactions. Characteristics of the compound synthesized in question were determined. The single crystals of Langasite-type were grown using the Czochralski method. The growth conditions for LTG and LNTG were studied and were found to be similar to those of LGS. The growth characteristics of LNTG were observed by studying etch pit formation density along the crystal length.

• 마이크로전자및패키징학회지
• /
• 제27권4호
• /
• pp.91-96
• /
• 2020

Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3계 압전 단결정의 유전특성과 압전특성을 전계 및 압축응력 인가 조건 하에서 33-모드 방식으로 측정하였다. 110~140℃ 영역에서 저온 rhombohedral 구조에서 고온 tetragonal 구조로의 상전이가 관찰되었으며, cubic 구조로 변화하는 큐리온도는 165℃ 정도로 나타났다. 압축응력 및 전계 변화에 따른 분극의 크기변화를 측정하였다. 전계인가 분극 곡선의 기울기로부터 비유전율을 계산하였고, 인가되는 응력의 크기가 증가할수록 계산된 비유전율의 크기는 증가하고, 인가되는 전계의 크기가 증가할수록 비유전율의 크기는 감소하는 경향성을 나타내었다. 압축응력 및 전계 변화에 따른 변위 거동을 측정하였으며, 곡선의 기울기로부터 압전상수를 계산하였고 압력인가에 따른 상전이를 확인하였다. 수중 또는 의료용 초음파 발진자로 실제 응용할 경우 선형성을 유지하여 구동이 가능하기 위하여 소자 기구물을 형성하는 단계에서 인가하게 되는 압축응력의 크기와 구동 전계의 DC 바이어스의 크기를 적절하게 설계할 필요가 있다.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.121-124
• /
• 1997

Emergence of advanced materials has been realized by the great demands for sophisticated state devices in high technology industry. It is the ear of speedy evolution of science and technology, in particular, materials processing technology, which enables us to synthesize any materials with respect to its purity and its perfection of crystal structure and shape (form) that have, heretofore not been available. The availability of ultra pure, fine raw materials, single crystals and thick/thin film materials has been largely responsible for such startling progresses that have been made in the realization of unforeseen, functional devices for high technology industry. Of the functional devices such as passive as active devices, non-silicon devices are mostly passive. Piezoelectric, electro-optic, magneto-optic devices, etc. are some of the examples. In this paper, magneto-optic materials for Faraday device, which is little known, are reviewed including its processing toward practical applications.

• 한국음향학회지
• /
• 제32권5호
• /
• pp.393-401
• /
• 2013

본 논문에서는 $48{\times}64$ 채널로 이루어진 압전단결정 2D 배열형 초음파 트랜스듀서의 설계, 제작 및 평가를 하였다. 전기적 연결이 용이한 평면배열 구조를 선정한 후, 그에 맞게 구성소자를 제작하였다. 유한요소 해석을 통하여 트랜스듀서의 세부 구조를 설계하였다. 트랜스듀서의 성능을 향상시키기 위해 치폭의 너비와 재료를 조절하여 소자간 상호간섭을 저감하고, 압전단결정 및 정합층의 최적 두께를 설계하여 목표 주파수 대역폭을 구현하였다. 설계에 따라 트랜스듀서의 시작품을 제작하고 그 특성을 측정한 후, 측정된 결과를 유한요소 해석 결과와 비교하여 개발된 트랜스듀서의 성능을 평가하였다.