• Computers and Concrete
• /
• v.20 no.5
• /
• pp.583-593
• /
• 2017

Applications of fibre-reinforced polymer (FRP) composites for retrofitting, strengthening and repairing concrete structures have been expanded dramatically in the last decade. FRPs have high specific strength and stiffness compared to conventional construction materials, e.g., steel. Ease of preparation and installation, resistance to corrosion, versatile fabrication and adjustable mechanical properties are other advantages of the FRPs. However, there are major concerns about long-term performance, serviceability and durability of FRP applications in concrete structures. Therefore, structural health monitoring (SHM) and damage detection in FRP-retrofitted concrete structures need to be implemented. This paper presents a study on investigating the application of Rayleigh wave for detecting debonding defect in FRP-retrofitted concrete structures. A time-of-flight (ToF) method is proposed to determine the location of a debonding between the FRP and concrete using Rayleigh wave. A series of numerical case studies are carried out to demonstrate the capability of the proposed debonding detection method. In the numerical case studies, a three-dimensional (3D) finite element (FE) model is developed to simulate the Rayleigh wave propagation and scattering at the debonding in the FRP-retrofitted concrete structure. Absorbing layers are employed in the 3D FE model to reduce computational cost in simulating the practical size of the FRP-retrofitted structure. Different debonding sizes and locations are considered in the case studies. The results show that the proposed ToF method is able to accurately determine the location of the debonding in the FRP-retrofitted concrete structure.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.20 no.9
• /
• pp.2812-2818
• /
• 1996

A cantilever beam with a mass and a spring at the end can be use to model a miniature flexible arm. It is necessary to know the natural frequencies and mode shapes to discuss its free vibration, especially when modal analysis is employed. A beam is clamped-free. In this paper we look at the lateral vibration of beams that have step changes in the properties of their cross sections. The frequency equation is derived by Bernoulli-Euler formulation and is sloved by the separation of variable. The parameters of the beam, 'mass and spring stiffness' are defined as nondimensionalized parameters for wide application of the results. According to the change of eigenvalues and mode shape are presented for this beam. The results presented are the eigenvalues and the natural frequencies for the first three modes of vibration. Results show that the parameters have a significant effect on the natural frequency.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.277.2-277.2
• /
• 2014

For next-generation electronic applications, human-machine interface devices have recently been demonstrated such as the wearable computer as well as the electronic skin (e-skin). For integration of those systems, it is essential to develop many kinds of components including displays, energy generators and sensors. In particular, flexible sensing devices to detect some stimuli like strain, pressure, light, temperature, gase and humidity have been investigated for last few decades. Among many condidates, a pressure sensing device based on organic field-effect transistors (OFETs) is one of interesting structure in flexible touch displays, bio-monitoring and e-skin because of their flexibility. In this study, we have investigated a flexible e-skin based on highly sensitive, pressure-responsive OFETs using microstructured ferroelectric gate dielectrics, which simulates both rapidly adapting (RA) and slowly adatping (SA) mechanoreceptors in human skin. In SA-type static pressure, furthermore, we also demonstrate that the FET array can detect thermal stimuli for thermoreception through decoupling of the input signals from simultaneously applied pressure. The microstructured highly crystalline poly(vinylidene fluoride-trifluoroethylene) possessing piezoelectric-pyroelectric properties in OFETs allowed monitoring RA- and SA-mode responses in dyanamic and static pressurizing conditions, which enables to apply the e-skin to bio-monitoring of human and robotics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.1
• /
• pp.43-49
• /
• 2005

Temperature stabilities of resonance frequencies of the substrates are very important in piezoelectric ceramics oscillators and fitters. In this study, it was investigated thermal resisting property of the length-extensional vibration mode of PZT ceramics. The mode can be utilized in fabricating ultra-small 55 kHz IF devices. We fabricated the ceramic specimens with x = 0.51, 0.52, 0.53, 0.54, and 0.55 in the Pb(Zr$\sub$x/Ti$\sub$1-x/)O$_3$ system. And their resonance frequencies were measured before 1st thermal aging, after 1st and 2nd thermal aging. In order to investigate the influence of thermal aging on thermal resisting properties, thermally aged specimens were once mote thermally aged. Before 1st thermal aging, the specimens of the compositions with morphotropic phase, x = 0.53 and rhombohedral phase, x = 0.54 have weak thermal resisting property of resonance frequency, while tetragonal phase, x = 0.51 has robust thermal resisting property of resonance frequency. 1st thermal aging improved thermal resisting property of resonance frequency in all specimens.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.4
• /
• pp.241-246
• /
• 1999

In this study, the piezoelectric ceramics PZT powders were synthesized by Wet-Dry combination method. And the flexible 1-3-0 type composites were favricated with piezoceramic PZT and Eccogel polymer matrix embedded 3rd phase. Dielectric constant of 1-3-0 type composites was lower than that of single phase PZT ceramics. Thickness mode coupling factor $k_t$ which was comparable with single phase PZT ceramics, and Mechanical Quality factor $Q_m$ were about 0.65 and 6 respectively. These composites are considered as a good candidates for broad-band type transducer applications. The acoustic impedance for 1-3-0 type composites was lower than that of single phase PZT ceramics. Therefore, these composites would be better used for hydrophone applications.

• Electrical & Electronic Materials
• /
• v.2 no.2
• /
• pp.109-116
• /
• 1989

PSN-PT-PZ 삼성분계 압전세라믹의 상도로부터 유전적, 압전적 특성이 가장 양호한 MPB부근의 조성을 선택하여 MnO$_{2}$를 0-2[wt.%]첨가하였으며 일반소성법으로 시편을 제작하였다. 소결온도는 1,200-1,280[.deg.C], 시간은 0.5-3[hr]까지 변화시켰으며 MnO$_{2}$의 첨가가 시편의 유전적, 압전적 특성에 미치는 영향을 고찰하였다. 제작된 시편의 비유전상수는 MnO$_{2}$의 첨가량에 따라 증가하였으며 MnO$_{2}$가 2[wt.%]첨가된 시편 S-15(PSN:PT:PZ, 15:48:37)의 경우 605.41, 큐리온도는 MnO$_{2}$의 첨가량이 증가할수록 선형적으로 감소하였다. 각 시편의 전기기계 결합계수와 유전손실은 MnO$_{2}$의 첨가량이 0.5-1.5[wt.%]범위에서 양호한 특성을 나타내었으며 MnO$_{2}$가 0.5[wt.%] 첨가된 시편 S-5(PSN:PT:PZ, 5:48:47)의 경우 전기기계 결합계수는 0.425로 가장 높은 값을 나타내었다. MnO$_{2}$가 1[wt.%] 첨가된 시편 S-10(PSN:PT:PZ, 10:48:42)에서 공진주파수의 온도의존성이 가장 양호하게 나타났으며 각 시편에 대한 MnO$_{2}$의 첨가량이 증가할수록 결정립 크기는 감소하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.41-42
• /
• 2005

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.248-249
• /
• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.974-977
• /
• 1999

PSN-PT 2성분계 압전세라믹스의 상도로부터 유전적, 압전적 특성이 양호한 MPB (Morphotropic phase boundary)부근의 조성을 선택하여 도너 도펀트인 $Nb_{2}O_{5}$와 억셉터 도펀트인 $Fe_{2}O_{3}$를 각각 $0{\sim}0.9wt%$ 첨가하여 유전 및 압전특성을 비교, 연구해보았다. 시편모두 $1250^{\circ}C$ 이상에서 이론밀도의 96%이상의 값을 얻을 수 있었고 상온, 1kHz에서 $Fe_{2}O_{3}$의 경우 0.1wt% 첨가된 시편에서 ${\varepsilon}_r$=2054의 최대 비유전율이 나타났으며, 0.7wt% 첨가된 시편에서는 $tan{\delta}$=0.49%의 최소 유전 손실값을 얻었다. $Fe_{2}O_{3}$가 0.1wt%, 0.3wt%로 첨가되었을 때 각각 $K_p$=58%, Qm=222의 값을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.160-163
• /
• 2003

This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.