• Title/Summary/Keyword: Piezoelectric Film

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Micro Power Properties of Harvesting Devices as a Function of PZT cantilever length and gross area (PZT 캔틸레버의 길이와 면적에 따른 에너지 하베스팅 장치의 출력 특성)

  • Kim, I.S.;Joo, H.K.;Song, J.S.;Kim, M.S.;Jeong, S.J.;Lee, D.S.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1246-1247
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    • 2008
  • With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.

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A Study on the Piezoelectric Characteristic of P(VDF-TrFE) Copolymer Thin Film by Physical Vapor Deposition Method (진공증착법을 이용한 P(VDF-TrFE) 공중합체 박막의 압전특성에 관한 연구)

  • Park, S.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.220-225
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    • 2008
  • In this research, the P(VDF-TrFE) copolymer thin films were prepared by the physical vapor deposition and studied to their piezoelectric properties. In the case of a specimen produced by varying the deposition temperature from $260^{\circ}C$ to $300^{\circ}C$, its piezoelectric coefficient($d_{33}$) increased from 32.3pC/N to 36.28pC/N, and piezoelectric voltage coefficient($g_{33}$) from $793{\times}10^{-3}V{\cdot}m/N$ to $910.5{\times}10^{-3}V{\cdot}m/N$. On the basis of these experimental results, we concluded that the P(VDF-TrFE) copolymer thin film prepared at $300^{\circ}C$ showed the optimum piezoelectric properties. At the deposition temperature of $320^{\circ}C$, its piezoelectric coefficient(d33) decreased 25.3 pC/N and piezoelectric voltage coefficient($g_{33}$) $680{\times}10^{-3}V{\cdot}m/N$.

Power Enhancement of ZnO-Based Piezoelectric Nanogenerators Via Native Defects Control

  • Kim, Dohwan;Kim, Sang-Woo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.297.2-297.2
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    • 2013
  • Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

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Designing Flexible Thin Film Audio Systems Utilizing Polyvinylidene Fluoride

  • Um, Keehong;Lee, Dong-Soo;Pinthong, Chairat
    • International journal of advanced smart convergence
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    • v.2 no.2
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    • pp.16-18
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    • 2013
  • In this paper, we develop a method to design a flexible thin film audio systems utilizing Polyvinylidene fluoride. The system we designed showed the properties of increased transparency and sound pressure levels. As an input terminal transparent oxide thin film is adopted. In order to provide dielectric insulation, a transparent insulating oxide thin film is coated to obtain double -layered structure. In the range of visible light, the output from the output of the system showed an increased and improved sound pressure level. The piezoelectric polymer film of polyvinylidene fluoride (PVDF) is used to produce mechanical vibration due to the applied electrical voltage signal. An analog electric voltage signal is transformed into sound waves in the audio system.

Thin Film Bulk Acoustic Resonators(FBAR) filters design Air-gap type using piezoelectric thin film (압전박막을 이용한 air-gap type FBAR 필터설계)

  • Jong, Jung-Youn;Kim, Yong-Chun;Kim, Sang-Jong;Kim, Kyung-Hwan;Yoon, Seok-Jin;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.838-841
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    • 2003
  • The aim of the study is to scrutinize the relationship between the area of resonance and insertion loss by analyzing the characteristics of 2-port resonator. This was done through designing an air-gap type Film Bulk Acoustic Resonator (FBAR) by using CAD model for the application of bandpass filter of high-frequency band with piezoelectric thin film. Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

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Frequency Tuning of Unimorph Cantilever for Piezoelectric Energy Harvesting (주파수 조정에 따른 에너지 하베스팅용 압전 캔틸레버의 특성)

  • Kim, Hyung-Chan;Song, Hyun-Cheol;Jeong, Dae-Yong;Kim, Hyun-Jai;Yoon, Seok-Jin;Ju, Byeong-Kwon
    • Korean Journal of Materials Research
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    • v.17 no.12
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    • pp.660-663
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    • 2007
  • Piezoelectric energy harvesting from our surrounding vibration has been studied for driving the wireless sensor node. To change the vibration energy into the electric-energy efficiently, the natural frequency of cantilever needs to be adjusted to that of a vibration source. When adding 6.80g mass on the end of the fabricated cantilever, a natural frequency shifts from 136 Hz into 49.5 Hz. In addition, electro-mechanical coupling factor increased from 10.20% to 11.90% and resulted in the 1.18 times increase of maximum output power.

Phenomenological Analysis of Piezoelectric Properties in 0.88Pb(Zn1/3Nb2/3)O3−0.12PbTiO3 Single Crystals with an Engineering Domain Configuration

  • Ha, Jong-Yoon;Kim, Jin-Sang;Jeong, Dae-Yong;Kim, Hyun-Jai;Yoon, Seok-Jin
    • Journal of the Korean Ceramic Society
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    • v.45 no.3
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    • pp.139-141
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    • 2008
  • The piezoelectric properties of tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals are characterized along the <111> direction, which composed the engineering domain configuration in the tetragonal phase. The <111>-oriented crystal possessed smaller $d_{33}$ values compared to the crystal along the <001> spontaneous polarization direction. Based on phenomenological theory, it is shown that the engineering domain configuration does not enhance the piezoelectric constant in tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals. In addition, the electrostrictive coefficients of $Q_{12}=-0.03706m^4/C^2,\;Q_{11}=0.10765m^4/C^2,\;and\;Q_{44}=0.02020m^4/C^2$ of tetragonal 0.88PZN-0.12PT single crystals were calculated.

Active Control of Flow Noise Sources in Turbulent Boundary Layer on a Flat-Plate Using Piezoelectric Bimorph Film

  • Song, Woo-Seog;Lee, Seung-Bae;Shin, Dong-Shin;Na, Yang
    • Journal of Mechanical Science and Technology
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    • v.20 no.11
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    • pp.1993-2001
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    • 2006
  • The piezoelectric bimorph film, which, as an actuator, can generate more effective displacement than the usual PVDF film, is used to control the turbulent boundary-layer flow. The change of wall pressures inside the turbulent boundary layer is observed by using the multi-channel microphone array flush-mounted on the surface when actuation at the non-dimensional frequency $f_b^+$:=0.008 and 0.028 is applied to the turbulent boundary layer. The wall pressure characteristics by the actuation to produce local displacement are more dominantly influenced by the size of the actuator module than the actuation frequency. The movement of large-scale turbulent structures to the upper layer is found to be the main mechanism of the reduction in the wall- pressure energy spectrum when the 700$700{\nu}/u_{\tau}$-long bimorph film is periodically actuated at the non- dimensional frequency $f_b^+$:=0.008 and 0.028. The biomorph actuator is triggered with the time delay for the active forcing at a single frequency when a 1/8' pressure-type, pin-holed microphone sensor detects the large-amplitude pressure event by the turbulent spot. The wall-pressure energy in the late-transitional boundary layer is partially reduced near the convection wavenumber by the open-loop control based on the large amplitude event.

Evaluation of Piezoelectric Properties in Pb(Zr,Ti)$O_3$-PVDF 0-3Type Composites for Thick Film Speaker Application (후막스피커 응용을 위한 Pb(Zr,Ti)$O_3$-PVDF 0-3형 복합체의 압전 특성 평가)

  • Son, Yong-Ho;Kim, Sung-Jin;Jeong, Joon-Seok;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.40-41
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    • 2006
  • In this work, we developed the 0-3 type piezoelectric composite to incorporate the advantages of both ceramic and polymer. The PVDF-PZT composites were fabricated with various mixing ratio by 3-roll mi11 mixer. The composite solutions were coated on ITO bottom-electrode deposited on PET (polyethylene terephthalate) polymer film by the conventional screen-printing method. After depositing the top-electrode of silver-paste, 4kV/mm of DC field was applied at $120^{\circ}C$ for 30min to poling the 0-3 composite film. The value of $d_{33}$ was increased as the PZT weight percent was increases. But the $g_{33}$ value showed the maximum at 65 wt% of PZT powder.

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Characteristics of Piezoelectric Microspeakers according to the Material Properties (물성변화에 따른 압전형 마이크로스피커의 특성)

  • Jeong, Kyong-Shik;Cho, Hee-Chan;Yi, Seung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.556-561
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    • 2008
  • This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small and constant at low frequency region and shows about 70 dB at 10 kHz. However, in case of a compressively stressed composite diaphragm, the SPL of the fabricated microspeakers shows higher output pressure than those of a tensile-stressed diaphragm. It produces more than 66 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with $20V_{peak-to-peak}$, sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone. From the experimental results, it is superior to have a compressively composite diaphragm in order to produce a high SPL in piezoelectric microspeaker.