• ETRI Journal
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• 제29권5호
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• pp.633-640
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• 2007

We report an experimental demonstration of 40 Gbps all-optical 3R regeneration with all-optical clock recovery based on InP semiconductor devices. We also obtain alloptical non-return-to-zero to return-to-zero (NRZ-to-RZ) format conversion using the recovered clock signal at 10 Gbps and 40 Gbps. It leads to a good performance using a Mach-Zehnder interferometric wavelength converter and a self-pulsating laser diode (LD). The self-pulsating LD serves a recovered clock, which has an rms timing jitter as low as sub-picosecond. In the case of 3R regeneration of RZ data, we achieve a 1.0 dB power penalty at $10^{-9}$ BER after demultiplexing 40 Gbps to 10 Gbps with an eletroabsorption modulator. The regenerated 3R data shows stable error-free operation with no BER floor for all channels. The combination of these functional devices provides all-optical 3R regeneration with NRZ-to-RZ conversion.

• Journal of Mechanical Science and Technology
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• 제20권8호
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1070-1078
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• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

• 한국광학회지
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• 제9권4호
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• pp.270-273
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• 1998

본 연구에서는 능동형 모드록킹 방식을 이용하여 10 GHz의 고반복률을 가지는 초단펄스 광섬유 고리형 레이저를 제작하였다. 레이저 공진기의 모든 부분을 편광유지 광섬유로 구성하여 편광변화에 의한 불안정성이 없는 비교적 안정된 펄스를 얻을 수 있었으며, 투과 대역폭 2.4 nm의 파장가변 필터를 공진기 내부에 삽입하여 발진파장을 1530 nm에서 1560 nm 까지 조절할 수 있었고, 0.4 nm 파장 선폭과 8 psec 펄스폭, 그리고 1.2mW평균출력을 갖는 펄스를 발생시킬 수 있었다. 또한, 여기광의 세기에 따른 relaxation oscillation 주파수 변화를 측정함으로써 레이저 공진기의 손실을 알 수 있는 방법을 제안하였다.

• Journal of Photoscience
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• 제2권1호
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• pp.19-25
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• 1995

Picosecond time-resolved and static protein fluorescence spectra and absorption spectra of octopus rhodopsin, a photorecepting protein, are measured and compared with those of bacteriorhodopsin, a photon-induced proton pumping protein, to understand the protein conformations and functions of octopus rhodopsin and its deprotonated photocycle intermediate. The bluer and weaker absorption of retinal indicates that octopus rhodopsin is better in thermal noise suppression but less efficient in light harvesting than bacteriorhodopsin. The protein fluorescence of octopus rhodopsin shows the characteristic of Trp only and the uantum efficiency and lifetime variations may result primarily from variations in the coupling strength with the retinal. The stronger intensity by four times and larger red shift by 12 nm of fluorescence suggest that octopus rhodopsin has more open and looser structure compared with bacteriorhodopsin. Fluorescence decay profiles reveal two decay components of 300 ps (60%) and 2 ns (40%). The deprotonation of protonated Schiff's base increases the shorter decay time to 500 ps and enhances the fluorescence intensity by 20%. The fluorescence and its decay time from Trp residues near retinal are influenced more by the deprotonation. The increase of fluorescence intimates that protein structure becomes loosened and relaxed further by the deprotonation of protonated Schiff's base. The driving force of sequential changes initiated by absorption of a photon is too exhausted after the deprotonation to return the intermediate to the ground state of the begun rhodopsin form.

• Current Optics and Photonics
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• 제4권4호
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• pp.368-372
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• 2020

We report the terahertz time-domain spectroscopy (THz-TDS) of transdermal drug delivery in human skin. The time evolution of transdermal nicotine delivery in nicotine patches was assessed by detecting the transmission coefficient of sub-picosecond THz pulses and using a semi-analytic model based on the single-layer effective medium approximation. Using commercial nicotine patches (Nicoderm CQ^®, 7 mg/24 h), THz transmission coefficients were measured to quantitatively analyze the cumulative amounts of nicotine released from the patches in the absence of their detailed specifications, including multilayer structures and optical properties at THz frequencies. The results agreed well with measurements by conventional in vitro and in vivo methods, using a diffusion cell with high-performance liquid chromatography and blood sampling respectively. Our study revealed the ability of the THz-TDS method to be an effective alternative to existing methods for noninvasive and label-free assessments of transdermal drug delivery, showing its high promise for biomedical, pharmaceutical, and cosmetic applications.

• 대한화학회지
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• 제48권4호
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• pp.339-350
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• 2004

피코초 시간분해능 전자 회절 분광법(TRED)을 이용하여 $CClF_3$ 분자의평형 구조를 연구하였다. 이 분광법의 분해능은 전자파의 선폭에 의하여 결정된다. 본 연구 방법에 의하여 결정된 $CClF_3$ 분자의 결합 길이들을 고전적인 실시간 전자회절 분광법(GED/RT)에 의하여 보고된 결과들과 비교하였다. GED/RT 방법에 의하여 결정된 C-F 결합 길이와 C-Cl 결합 길이는 각각 132.00(2) pm, 175.20(3) pm이고, TRED 방법에 의하여 결정된 C-F, C-Cl 결합 길이는 각각 132.23(13) pm, 177.23(19) pm 로써 이 두 실험 방법에 의하여 결정된 분자 결합 길이는 좋은 일치성을 보여준다.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.205-214
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• 2002

The reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. Especially, we have focused on the mechanism changes with the hydrogen surface coverage difference. On the sparsely covered surface, the gas atom interacts with the preadsorbed hydrogen atom and adjacent bare surface sites. In this case, it is shown that the chemisorption of H(g) is of major importance. Nearly all of the chemisorption events accompany the desorption of H(ad), i.e., adisplacement reaction. Although much less important than the displacement reaction, the formation of $H_2(g)$ is the second most significant reaction pathway. At gas temperature of 1800 K and surface temperature of 300 K, the probabilities of these two reactions are 0.750 and 0.065, respectively. The adsorption of H(g) without dissociating H(ad) is found to be negligible. In the reaction pathway forming $H_2$, most of the reaction energy is carried by $H_2(g)$. Although the majority of $H_2(g)$ molecules are produced in sub-picosecond, direct-mode collisions, there is a small amount of $H_2(g)$ produced in multiple impact collisions, which is characteristic of complex-mode collisions. On the fully covered surface, it has been shown that the formation of $H_2(g)$ is of major importance. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. At gas temperature of 1800 K and surface temperature of 300 K, the probability of the $H_2(g)$ formation reaction is 0.082. In this case, neither the gas atom trapping nor the displacement reaction has been found.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• 대한전자공학회논문지TC
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• 제40권1호
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• pp.37-46
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• 2003

임의로 결선된 디지털 전송선로의 과도응답을 효율적인 노드분할 기법을 사용하여 분석하였다. 제시한 노드분할 기법은 전송선로를 분할하여 해석할 수 있도록 하므로서 연결선의 임의 위치에서의 과도파형을 쉽게 예측할 수 있다. 일반성을 보이기 위해 임의로 연결된 분산특성을 갖는 마이크로스트립 다도체 전송선로들을 예로 들어 분석하였다. 결합선로의 주파수의존성 등가 회로정수들은 스펙트럼 영역 기법(SDA)을 사용하여 도출하였다. 고속 마이크로스트립 결합선로 상에 인가되는 펄스의 펄스폭 변화가 누화에 미치는 영향도 동시에 검토하였다. 선로의 길이와 기판 유전율이 증가하면 누화 피크값이 단조롭게 증가한다는 기존의 결과와는 달리 펄스폭이 수 ps에 이르면 오히려 감소하는 특성을 볼 수 있었다. 제시한 노드분할 기법을 사용한 결과를 일반화된 S-행렬 기법을 사용한 결과와 비교하므로서 타당성을 보였다.