• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.895-898
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• 1999

We calculated Al-Absorption, Al-reflection, and Si-etching probabilities as a function of incident angle and energy using classical molecular dynamics (MD) simulation. Variations of the cases of Al-absorption rate and Al-reflection rate are less than that of Si-etching rate. In contrast with general prediction, our simulation results showed that channeling of the <110> direction occurred the most in the case of incident angle between 30degree and 40degree. We investigated that channeling of the <110> directions quite affect Al-absorption rate in silicon. Since Si-etching rate is high and Al-absorption rate by <110> channeling is high, we found that Al ionized physical vapor deposition (PVD) on Si(001) has a different characteristics with Al ionized PVD on A1(111).

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.9-11
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• 2013

We have investigated the effect of thickness of the MgB2 film on the grain growth direction as well as on their superconducting properties. $MgB_2$ films of various thicknesses were fabricated on c-cut $Al_2O_3$ substrates at a temperature of $540^{\circ}C$ by using hybrid physical-chemical vapor deposition (HPCVD) technique. The superconducting transition temperature ($T_c$) was found to increase with increase in the thickness of the $MgB_2$ film. X-ray diffraction analysis revealed that the orientation of grains changed from c-axis to a-axis upon increasing the thickness of the $MgB_2$ film from 0.6 to 2.0 ${\mu}m$. $MgB_2$ grains of various orientations were observed in the microstructures of the films examined by scanning electron microscopy. It is observed that at high magnetic fields the 2.0-${\mu}m$-thick film exhibit considerably larger critical current density ($J_c$) as compared to 0.6-${\mu}m$-thick film. The results are discussed in terms of an intrinsic-pinning in $MgB_2$ similarly as intrinsic-pinning occurring in high-Tc cuprate superconductors with layered structure.

• 한국재료학회지
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• 제25권10호
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• pp.571-576
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• 2015

The effects of coating thickness on the delamination and fracture behavior of thermal barrier coating (TBC) systems were investigated with cyclic flame thermal fatigue (FTF) and thermal shock (TS) tests. The top and bond coats of the TBCs were prepared by electron beam-physical vapor deposition and low pressure plasma spray methods, respectively, with a thickness ratio of 2:1 in the top and bond coats. The thicknesses of the top coat were 200 and $500{\mu}m$, and those of the bond coat were 100 and $250{\mu}m$. FTF tests were performed until 1140 cycles at a surface temperature of $1100^{\circ}C$ for a dwell time of 5 min. TS tests were also done until more than 50 % delamination or 1140 cycles with a dwell time of 60 min. After the FTF for 1140 cycles, the interface microstructures of each TBC exhibited a sound condition without cracking or delamination. In the TS, the TBCs of 200 and $500{\mu}m$ were fully delaminated (> 50 %) within 171 and 440 cycles, respectively. These results enabled us to control the thickness of TBC systems and to propose an efficient coating in protecting the substrate in cyclic thermal exposure environments.

• Bulletin of the Korean Chemical Society
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• 제20권12호
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• pp.1413-1417
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• 1999

Chemical poisoning of Ni/MgO catalyst was induced by hot alkali carbonate vapor in molten carbonate fuel cell (MCFC), and the poisoned (or contaminated) catalyst was characterized by TPR/TPO, FTIR, and XRD analysis. Carbonate electrolytes such as K and Li were transferred to the catalyst during DIR-MCFC operation at 650 ℃. The deposition of alkali species on the catalyst consequently led to physical blocking on catalytic active sites and structural deformation by chemical poisoning. TPR/TPO analysis indicated that K species enhanced the reducibility of NiO thin film over Ni as co-catalyst, and Li species lessened the reducibility of metallic Ni by chemical reaction with MgO. FTIR analysis of the poisoned catalyst did not exhibit the characteristic ${\vector}_1$$(D_{3h})$ peaks (1055 $cm^{-1},\;1085\;cm{-1})$ for pure crystalline carbonates, instead a new peak (1120 $cm^{-1})$ was observed proportionally with deformed alkali carbonates. From XRD analysis, the oxidation of metallic Ni into $Ni_xMg_{1-x}O$ was confirmed by the peak shift of MgO with shrinking of Ni particles. Conclusively, hot alkali species induced both chemical poisoning and physical deposition on Ni/MgO catalyst in DIR-MCFC at 650 ℃.

• 한국표면공학회지
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• 제45권3호
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• pp.106-110
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition where incident vapor flux arrives at non-normal angles. It has been known that tilting the substrate changes the properties of the film, which is thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer TiN films by cathodic arc deposition. TiN films have been deposited on cold-rolled steel sheets and stainless steel sheet. The deposition angle as well as substrate temperature and substrate bias was changed to investigate their effects on the properties of TiN films. TiN films were analyzed by color difference meter, scanning electron microscopy, nanoindenter and x-ray diffraction. The color of TiN films was not much changed according to the deposition conditions. The slanted and zigzag structures were observed from the single and multilayer films. The relation between substrate tilting angle (${\alpha}$) and the growth column angle (${\beta}$) followed the equation of $tan{\alpha}=2tan{\beta}$. The indentation hardness of TiN films deposited by OAD was low compared with the ones prepared at normal angle. However, it has been found that $H^3/E^2$ ratio of 3-layer TiN films prepared at OAD condition was a little higher than the ones prepared at normal angle, which can confirm the robustness of prepared films.

• 한국진공학회지
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• 제17권3호
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• pp.220-225
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• 2008

본 실험은 P(VDF-TrFE) 공중합체 박막을 제조하고 압전특성을 검토하는데 있다. 또한 압전 특성 분석에서 압전 계수 $d_{33}$와 압전 전압 계수 $g_{33}$는 증착 온도가 $260{\sim}300^{\circ}C$ 까지는 32.3pC/N에서 36.28pC/N, $793{\times}10^{-3}V{\cdot}m/N$에서 $910.5{\times}10^{-3}V{\cdot}m/N$으로 증가하는 경향을 나타내었다. 이상의 실험 결과로 $300^{\circ}C$의 온도에서 P(VDF-TrFE) 공중합체 박막을 제조 할 때 최적의 특성이 나타남을 알 수 있었다. 반면에 증착온도가 $320^{\circ}C$에서 증착한 경우에는 각각 25.3pC/N, $680.3{\times}10^{-3}V{\cdot}m/N$으로 감소하였다.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.221-228
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• 1998

In this study, the $\beta$-Polyvinylidene fluoride(PVDF) thin films were fabricated by physical vapor deposition method. Also, the properties of dielectric relaxation were studied to understand carrier's behavior of PVDF thin films, to be regarded as the excellent piezo and pyroelectricity. In the process of vapor deposition, the $\beta$-PVDF thin films have been fabricated under the condition of the substrate temperature at 3$0^{\circ}C$, the applied electric field at 142.8kV/cm and the pressure at 2.0${\times}10^{-5}$torr. The dielectric properties of PVDF have been studied in the frequency range 10Hz to 1MHz at temperature from 30 to $100^{\circ}C$. The relative dielectric constant of $\alpha$ and $\beta$-PVDF were 6.8 and 9.8, respectively, under a frequency of 1kHz. Such a phenomenon was caused by the decrease in intermolecular forces originated by the phase-transition from the TGTG' molecular conformation to the TT planar zig-zag conformation. And the relative dielectric constant is increased as a measuring temperature increases, because of the reduction of relaxation time caused by the decrease of intermolecular force.

• 방사성폐기물학회지
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• 제8권2호
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• pp.151-158
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• 2010

무에 대한 $I_2$ 증기의 작물체 침적속도와 뿌리 전류계수를 측정하기 위하여 파종 후 29 일에서 53 일 사이에 생육시기별로 작물체를 $I_2$ 증기에 80 분 간 피폭시켰다. 피폭은 오전 중에 투명한 상자 내에서 수행되었다. 침적속도($ms^{-1}$)는 대체로 $1.0{\times}10^{-4}{\sim}2.0{\times}10^{-4}$의 범위로 생육밀도가 높을수록 증가하는 경향이었다. 또한 상대습도가 높을 경우 값이 커진다는 기존 보고와 어느 정도 일치하였다. 본 침적속도는 몇몇 야외 측정치보다 수 십 배 정도 낮았고 이는 주로 피폭상자 내의 낮은 풍속($0.2\;ms^{-1}$ 내외)에 기인하는 것으로 추정되었다. 뿌리 전류계수(작물체 총침적량에 대한 수확시 뿌리 내 함유량의 비)는 다소 보수적으로 계산하여 파종 후 29 일 피폭에서 $1.3{\times}10^{-3}$, 파종 후 53 일 피폭에서는 $5,0{\times}10^{-3}$이었다. 본 실험결과의 이용에 있어서는 기상 조건, 요오드의 물리화학적 형태 등에 유의할 필요가 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.328.2-328.2
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• 2014

Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.