• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.895-898
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• 1999

We calculated Al-Absorption, Al-reflection, and Si-etching probabilities as a function of incident angle and energy using classical molecular dynamics (MD) simulation. Variations of the cases of Al-absorption rate and Al-reflection rate are less than that of Si-etching rate. In contrast with general prediction, our simulation results showed that channeling of the <110> direction occurred the most in the case of incident angle between 30degree and 40degree. We investigated that channeling of the <110> directions quite affect Al-absorption rate in silicon. Since Si-etching rate is high and Al-absorption rate by <110> channeling is high, we found that Al ionized physical vapor deposition (PVD) on Si(001) has a different characteristics with Al ionized PVD on A1(111).

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.9-11
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• 2013

We have investigated the effect of thickness of the MgB2 film on the grain growth direction as well as on their superconducting properties. $MgB_2$ films of various thicknesses were fabricated on c-cut $Al_2O_3$ substrates at a temperature of $540^{\circ}C$ by using hybrid physical-chemical vapor deposition (HPCVD) technique. The superconducting transition temperature ($T_c$) was found to increase with increase in the thickness of the $MgB_2$ film. X-ray diffraction analysis revealed that the orientation of grains changed from c-axis to a-axis upon increasing the thickness of the $MgB_2$ film from 0.6 to 2.0 ${\mu}m$. $MgB_2$ grains of various orientations were observed in the microstructures of the films examined by scanning electron microscopy. It is observed that at high magnetic fields the 2.0-${\mu}m$-thick film exhibit considerably larger critical current density ($J_c$) as compared to 0.6-${\mu}m$-thick film. The results are discussed in terms of an intrinsic-pinning in $MgB_2$ similarly as intrinsic-pinning occurring in high-Tc cuprate superconductors with layered structure.

• Korean Journal of Materials Research
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• v.25 no.10
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• pp.571-576
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• 2015

The effects of coating thickness on the delamination and fracture behavior of thermal barrier coating (TBC) systems were investigated with cyclic flame thermal fatigue (FTF) and thermal shock (TS) tests. The top and bond coats of the TBCs were prepared by electron beam-physical vapor deposition and low pressure plasma spray methods, respectively, with a thickness ratio of 2:1 in the top and bond coats. The thicknesses of the top coat were 200 and $500{\mu}m$, and those of the bond coat were 100 and $250{\mu}m$. FTF tests were performed until 1140 cycles at a surface temperature of $1100^{\circ}C$ for a dwell time of 5 min. TS tests were also done until more than 50 % delamination or 1140 cycles with a dwell time of 60 min. After the FTF for 1140 cycles, the interface microstructures of each TBC exhibited a sound condition without cracking or delamination. In the TS, the TBCs of 200 and $500{\mu}m$ were fully delaminated (> 50 %) within 171 and 440 cycles, respectively. These results enabled us to control the thickness of TBC systems and to propose an efficient coating in protecting the substrate in cyclic thermal exposure environments.

• Bulletin of the Korean Chemical Society
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• v.20 no.12
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• pp.1413-1417
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• 1999

Chemical poisoning of Ni/MgO catalyst was induced by hot alkali carbonate vapor in molten carbonate fuel cell (MCFC), and the poisoned (or contaminated) catalyst was characterized by TPR/TPO, FTIR, and XRD analysis. Carbonate electrolytes such as K and Li were transferred to the catalyst during DIR-MCFC operation at 650 ℃. The deposition of alkali species on the catalyst consequently led to physical blocking on catalytic active sites and structural deformation by chemical poisoning. TPR/TPO analysis indicated that K species enhanced the reducibility of NiO thin film over Ni as co-catalyst, and Li species lessened the reducibility of metallic Ni by chemical reaction with MgO. FTIR analysis of the poisoned catalyst did not exhibit the characteristic ${\vector}_1$$(D_{3h})$ peaks (1055 $cm^{-1},\;1085\;cm{-1})$ for pure crystalline carbonates, instead a new peak (1120 $cm^{-1})$ was observed proportionally with deformed alkali carbonates. From XRD analysis, the oxidation of metallic Ni into $Ni_xMg_{1-x}O$ was confirmed by the peak shift of MgO with shrinking of Ni particles. Conclusively, hot alkali species induced both chemical poisoning and physical deposition on Ni/MgO catalyst in DIR-MCFC at 650 ℃.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.106-110
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition where incident vapor flux arrives at non-normal angles. It has been known that tilting the substrate changes the properties of the film, which is thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer TiN films by cathodic arc deposition. TiN films have been deposited on cold-rolled steel sheets and stainless steel sheet. The deposition angle as well as substrate temperature and substrate bias was changed to investigate their effects on the properties of TiN films. TiN films were analyzed by color difference meter, scanning electron microscopy, nanoindenter and x-ray diffraction. The color of TiN films was not much changed according to the deposition conditions. The slanted and zigzag structures were observed from the single and multilayer films. The relation between substrate tilting angle (${\alpha}$) and the growth column angle (${\beta}$) followed the equation of $tan{\alpha}=2tan{\beta}$. The indentation hardness of TiN films deposited by OAD was low compared with the ones prepared at normal angle. However, it has been found that $H^3/E^2$ ratio of 3-layer TiN films prepared at OAD condition was a little higher than the ones prepared at normal angle, which can confirm the robustness of prepared films.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.220-225
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• 2008

In this research, the P(VDF-TrFE) copolymer thin films were prepared by the physical vapor deposition and studied to their piezoelectric properties. In the case of a specimen produced by varying the deposition temperature from $260^{\circ}C$ to $300^{\circ}C$, its piezoelectric coefficient($d_{33}$) increased from 32.3pC/N to 36.28pC/N, and piezoelectric voltage coefficient($g_{33}$) from $793{\times}10^{-3}V{\cdot}m/N$ to $910.5{\times}10^{-3}V{\cdot}m/N$. On the basis of these experimental results, we concluded that the P(VDF-TrFE) copolymer thin film prepared at $300^{\circ}C$ showed the optimum piezoelectric properties. At the deposition temperature of $320^{\circ}C$, its piezoelectric coefficient(d33) decreased 25.3 pC/N and piezoelectric voltage coefficient($g_{33}$) $680{\times}10^{-3}V{\cdot}m/N$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.221-228
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• 1998

In this study, the $\beta$-Polyvinylidene fluoride(PVDF) thin films were fabricated by physical vapor deposition method. Also, the properties of dielectric relaxation were studied to understand carrier's behavior of PVDF thin films, to be regarded as the excellent piezo and pyroelectricity. In the process of vapor deposition, the $\beta$-PVDF thin films have been fabricated under the condition of the substrate temperature at 3$0^{\circ}C$, the applied electric field at 142.8kV/cm and the pressure at 2.0${\times}10^{-5}$torr. The dielectric properties of PVDF have been studied in the frequency range 10Hz to 1MHz at temperature from 30 to $100^{\circ}C$. The relative dielectric constant of $\alpha$ and $\beta$-PVDF were 6.8 and 9.8, respectively, under a frequency of 1kHz. Such a phenomenon was caused by the decrease in intermolecular forces originated by the phase-transition from the TGTG' molecular conformation to the TT planar zig-zag conformation. And the relative dielectric constant is increased as a measuring temperature increases, because of the reduction of relaxation time caused by the decrease of intermolecular force.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.2
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• pp.151-158
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• 2010

In order to measure the deposition velocity of $I_2$ vapor for radish plants and its translocation factor for their roots, radish plants were exposed to $I_2$ vapor for 80 min. at different growth stages between 29 and 53 d after sowing. The exposure was performed in a transparent chamber during the morning time. Deposition velocities ($ms^{-1}$) were on the whole in the range of $1.0{\times}10^{-4}{\sim}2.0{\times}10^{-4}$ showing an increasing tendency with an increase in the biomass density. The results showed some agreement with existing reports that a higher relative humidity would lead to a higher deposition velocity. The acquired deposition velocities were lower than by factors of several tens than some field measurements probably due to a very low wind speed (about $0.2\;ms^{-1}$) in the chamber. Translocation factors (ratio of the total iodine in the roots at harvest to the total plant deposition), estimated in a more or less conservative way, were $1.3{\times}10^{-3}$ for an exposure at 29 d after sowing and $5.0{\times}10^{-3}$ for an exposure at 53 d after sowing. In using the present experimental data, meteorological conditions and chemical and physical forms of iodine need to be carefully considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.2-328.2
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• 2014

Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.