• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.93-101
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• 1999

The purposed of this paper is to investigate the electrical and thermal stability of Polyvinylidene fluoride(PVDF) organic thin films prepared by the vapor deposition method. The differential scanning calorimetry curve of the PVDF organic thin films prepared by increasing substrate temperature showed that the melting curve increased from $128^{\circ}C$ to $142^{\circ}C$. This result implied that the PVDF organic thin film prepared by increasing substrate temperature increased intermolecular force in the crystalline region. The anomalous properties in dielectric constant and dielectric loss at low frequency and high temperature were described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm's law is satisfied in the range of lower electric field and ln J was proportional to the electric field ln E as like the conventional property of ionic conduction in the range of higher electric field. It was confirmed that major carrier of conductivity was ions. The electrical stability was improved according to an increase of the substrate temperature. On the basis of this experimental result, it could be observed that the optimum temperature of substrate for the electrical and thermal stability was at $105^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.101-101
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• 2003

Al 박막의 화학증착(CVD)과 Al-Cu 합금박막의 물리증착(PVD)을 조합하는 CVD-PVD Al 공정은 수평방향의 배선과 수직방향의 via를 동시에 형성할 수 있으므로 공정단순화 및 생산원가절감 측면에서 장점이 있어서 DRAM 둥의 반도체 소자의 배선공정으로 매우 유망하다[1]. 본 연구에서는 CVD-PVD Al 공정을 이용하여 초고집적소자의 Al via와 Al 배선을 동시에 형성할 때 층간절연막의 영향을 조사하고 그 원인을 규명하였다. Al CVD를 위한 원료기체로는 dimethylaluminum hydride [($CH_3$)$_2$AlH]를 사용하였고 PVD는 38$0^{\circ}C$에서 실시하였다 층간절연막에 따른 CVD-PVD Al의 via hole 매립특성을 조사한 결과, high-density plasma(HDP) CVD oxide의 경우에는 via hole 매립특성이 우수하였으나, hydrogen silscsquioxane (HSQ)의 경우에는 매립특성이 우수하지 않아서 via 저항이 불균일 하였다. 이는 via 식각 후 wet cleaning 과정에서 HSQ에 흡수된 수분이 lamp를 이용한 degassing 공정에 의해서 완전히 제거되지 않아 CVD-PVD 공정 중에 탈착되어 Al reflow에 나쁜 영향을 미치기 때문으로 판단된다. CVD-PVD 공정 전에 40$0^{\circ}C$, $N_2$ 분위기에서 baking하여 HSQ 내의 수분을 충분히 제거함으로써 via 매립특성을 향상시킬 수 있었다. CVD-PVD Al 공정은 aspect ratio 10:1 이상의 via hole도 완벽하게 매립할 수 있었고 이에의해 제조된 Al 배선은 기존의 W plug 공정에 의해 제조된 배선에 비해 낮은 via 저항을 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.101-105
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• 2007

We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• Journal of the Korean Graphic Arts Communication Society
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• v.24 no.2
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• pp.49-59
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• 2006

In this paper, a transparent film exposed the effect of heat cut-off, reveal as means of the prevention to wrong operation of parts of display and forgery of the credit card, also it will intercept rising of the temperature in interior of a room and car by diminish the influx of near-infrared ray wavelength of solar energy come from the window. As in the past a film which absorb a wavelength of $800{\sim}2500nm$ in near-infrared ray, manufactured in physical vapor deposition(PVD), chemical vapor deposition(CVD) to using ATO, ITO of inorganic materials or sputtering method. but it has lots of problem in manufacture. On the other hand, recently a paper said it easily form a transparent film to using organic dye. This paper show synthesis of many derivatives used in Ni-complex and then it investigate to optical property and durability of flim by make the transparent film.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.28-33
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• 2020

Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.98-104
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• 2002

CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.401-401
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• 2012

유기발광소자는 유연 소자로의 적용, 자체 발광 등의 장점으로 차세대 디스플레이로서 각광받고 있다. 하지만 유기발광소자는 유기물을 발광층으로 하고 있기 때문에 수분에 취약하다는 단점이 있다. 그래서 봉지 기술(encapsulation)을 필요로 한다. 널리 알려진 방법으로는 유리로 소자를 감싸고 내부에 흡습제를 충진하여 수분 투습을 줄일 수 있다. 하지만 위 기술을 사용할 경우 유기발광소자의 장점인 유연 소자의 적용이 어렵다. 따라서 박막 봉지 기술을 이용하면 보다 얇은 두께의 소자 제작이 가능하고 유연 소자의 적용 역시 가능해진다. 박막 코팅을 이용한 봉지 기술 중 화학적 증착법(Chemical Vapor Deposition, CVD)이나 물리적 증착법(Physical Vapor Deposition, PVD)을 이용하는 방법이 널리 알려져 있지만 원자층 증착법(Atomic Layer Deposition, ALD)을 이용하면 보다 낮은 두께의 치밀한 박막을 제작 할 수 있다. 본 연구는 원자층 증착법을 응용한 분자층 증착법(Molecular Layer Deposition, MLD)을 이용하여 Trimethylaluminum과 Ethylene glycol을 순차적으로 주입함으로써 Alucone 유기 박막을 제작하고 유기발광소자의 봉지 기술로의 적용을 위해 투과 방지막 특성에 관하여 분석했다. 박막 봉지 기술로서 적용하기 위해 제작된 투과 방지막은 원자층 증착법으로 Al2O3무기 박막을 제작하고 분자층 증착법으로 Alucone 박막을 순차적으로 증착하였다. 이를 Ca를 이용하여 전도도를 측정하고, 투습도를 계산하여 투과 방지막 특성을 분석하였다. Alucone 박막은 우수한 투과 방지막 특성을 가지지는 못하지만 적층 구조로 제작함으로써 두 쌍의 Alucone/Al2O3일때, $6.07{\times}10^{-2}g/m^2day$의 투습도를 보여주고 있다. Alucone 박막의 존재는 수분이나 산소의 투과 경로 길이를 늘려줌으로써 Alucone/Al2O3 박막의 투과방지 특성이 향상되는 것으로 사료된다.

• Nuclear Engineering and Technology
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• v.50 no.2
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• pp.229-236
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• 2018

Accident-tolerant fuels (ATFs) are currently of high interest to researchers in the nuclear industry and in governmental and international organizations. One widely studied accident-tolerant fuel concept is multilayer cladding (also known as coated cladding). This concept is based on a traditional Zr-based alloy (Zircaloy-4, M5, E110, ZIRLO etc.) serving as a substrate. Different protective materials are applied to the substrate surface by various techniques, thus enhancing the accident tolerance of the fuel. This study focuses on the results of testing of Zircaloy-4 coated with pure chromium metal using the cold spray (CS) technique. In comparison with other deposition methods, e.g., Physical vapor deposition (PVD), laser coating, or Chemical vapor deposition techniques (CVD), the CS technique is more cost efficient due to lower energy consumption and high deposition rates, making it more suitable for industry-scale production. The Cr-coated samples were tested at different conditions ($500^{\circ}C$ steam, $1200^{\circ}C$ steam, and Pressurized water reactor (PWR) pressurization test) and were precharacterized and postcharacterized by various techniques, such as scanning electron microscopy, Energy-dispersive X-ray spectroscopy (EDX), or nanoindentation; results are discussed. Results of the steady-state fuel performance simulations using the Bison code predicted the concept's feasibility. It is concluded that CS Cr coating has high potential benefits but requires further optimization and out-of-pile and in-pile testing.