• 전자공학회논문지D
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• 제36D권7호
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• pp.42-49
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• 1999

측면이 코어 가까이 연마된 단일모드 광섬유와 평면도파로의 소산장 결합을 이용한 광필터의 동작특성을 측정할 수 있는 간단한 방법이 제안되었다. 측면이 연마된 하나의 광섬유 블록(block)과 실리콘 산호막위에 평면도파로를 독립적으로 제작한 후 특성을 측정하기 위하여 물리적 압력으로 광결합을 시켰다. 굴절률이 다른 몇 가지 폴리머를 평면도파로의 코어층으로 이용하였다. 이 측정방법으로 소자제작 과정에서 광 결합기의 중심파장, 대역폭, 소멸비, 그리고 편광 의존성들이 간단하게 측정될 수 있다. 광도파로 물질의 굴절률이 높을수록 파장선택성이 높아졌다. 평면도파로의 대칭적 도파로 구조와 도파 물질의 등방성 때문에 편광의존성이 작게 나타났다. 삽입 손실을 0.5dB이하였다. 본 연구에서 제안한 측정방법은 광섬유와 평면도파로 결합기를 이용한 광변조기와 광필터 등 다양한 소자개발에 도움이 될 수 있을 것으로 기대된다.

• 한국초전도ㆍ저온공학회논문지
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• 제15권3호
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• 한국전자파학회논문지
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• 제21권2호
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• pp.143-151
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• 2010

본 논문에서는 Metamaterial CRLH 구조 기반의 0차 공진현상이 발생되는 새로운 직각 패치 안테나가 제안된다. 일반 마이크로스트립 패치 구조의 기본 공진 모드인 반파장 공진이나 반파장 공진의 양의 정수배가 아닌 구조 전체에 전계가 같은 위상을 갖게 하면서, 기존에 발표된 다수의 금속 쎌들이 일렬 연결된 1차원 0차 공진 안테나의 구조와 달리 금속 패치 주위에 하나의 용량성 결합 직각 링만을 부착하는 구조를 제안하는 것이다. 2.4 GHz에서 0차 공진 특성을 갖도록 설계된 등가회로에 따른 물리 구조의 치수들이 입력된 3차원 전자장 분석기에서 안테나의 성능에 대한 모의시험을 수행한다. 설계 결과 2.4 GHz에서 공진점을, 그리고 이득과 효율은 각각 5 dB와 98%를 얻었다. 또한 본 논문이 제안하는 안테나가 마이크로스트립 패치 안테나의 장점인 low-profile과 모노폴 안테나의 장점인 전방향 패턴을 동시에 가지는 특징이 논의된다.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• 천문학회보
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• 제42권2호
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• pp.50.1-50.1
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• 2017

The Non-Principal Axis (NPA) rotators can be clues to spin evolutionary processes of asteroids because their excited spin states evolve due to either internal or external forces. The NPA rotation of (5247) Krylov was confirmed by Lee et al. (2017) based on KMTNet photometric observations during the 2016 apparition. We conducted follow-up observations in 2017 apparition using the 0.6-2.1m telescopes in the northern hemisphere to determine the spin state and shape model of this asteroid. We found that it is rotating in the Short Axis Mode (SAM) based on the determined rotation period ($P_{\psi}=374.6hr$) and precession period ($P_{\phi}=67.48hr$). The greatest and intermediate principal inertia moments are nearly the same as $I_b/I_c=0.94$, but the smallest principal inertia moments are nearly half that of the others, $I_a/I_c=0.43$. This ratio of principal inertia moments suggests that dynamically equivalent shape of this asteroid is close to that of a prolate ellipsoid. In this presentation, we will provide the physical model of (5247) Krylov to discuss its possible spin evolutionary processes that acted on its spin.

• 한국추진공학회지
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• 제20권1호
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• pp.14-19
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• 2016

HTPB/AP계 혼합형 고체 추진제의 점도와 기계적 특성은 산화제인 AP의 입자 크기에 크게 영향을 받는다. $190{\mu}m$의 크기의 AP와 $7{\mu}m$ 크기의 AP를 사용한 HTPB/AP 추진제에서 큰 입자/작은 입자의 비율이 70/30~60/40 범위인 조성의 추진제가 매우 낮은 점도를 나타났는데, 이것은 고체입자의 충전율이 높은 상태이기 때문이다. 추진제의 인장강도 시험에서 Toughness는 큰 입자의 함량이 많아질수록 증가하는 것으로 나타났다. 낮은 점도와 좋은 인장강도를 동시에 고려할 때, AP 큰 입자와 작은 입자를 70/30으로 사용하는 것이 가장 효과적인 것으로 분석되었다.

• 한국도로학회논문집
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• 제14권5호
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• pp.31-45
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• 2012

PURPOSES: In Korea, rapid maintenance of distressed concrete pavement is required to prevent traffic jam of the highway. Asphalt concrete overlay has been used as a general maintenance method of construction for aged concrete pavement. AC overlay on existing concrete pavements experience various early distresses such as reflection crack, pothole and rutting, due to different physical characteristics between asphalt overlay and existing concrete pavement. Bonded concrete overlay(BCO) is a good alternative since it has advantages that can reduce various distresses during the service life since overlay material has similar properties with existing concrete pavements. Recently, BCO which uses the ultra rapid harding cement has been applied for maintenance of highway. BCO has advantage of structural performance since it does monolithic behave with existing pavement. Therefore, it is important to have a suitable bond strength criteria for securing performance of BCO. Bond strength criteria should be larger than normal tensile stress and horizontal shear stress occurred by traffic and environmental loading at bond interface. Normal tensile stress and horizontal shear stress need to estimated for the establishment of practical bond strength criteria. METHODS: This study aimed to estimate the bond stresses at the interface of BCO using the three dimensional finite element analysis. RESULTS: As a result of this study, major failure mode and maximum bond stress are evaluated through the analysis of normal tensile stress and horizontal shear stress for various traffic and environmental load conditions. CONCLUSIONS: It was known that normal tensile stresses are dominated by environmental loading, and, horizontal shear stresses are dominated by traffic loading. In addition, bond failure occurred by both of normal tensile stresses and horizontal shear stresses; however, normal tensile stresses are predominated over horizontal shear stresses.

• 천문학회지
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• 제48권5호
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• pp.285-298
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• 2015

Active Galactic Nuclei (AGN) with bright radio jets offer the opportunity to study the structure of and physical conditions in relativistic outflows. For such studies, multi-frequency polarimetric very long baseline interferometric (VLBI) observations are important as they directly probe particle densities, magnetic field geometries, and several other parameters. We present results from first-epoch data obtained by the Korean VLBI Network (KVN) within the frame of the Plasma Physics of Active Galactic Nuclei (PAGaN) project. We observed seven radio-bright nearby AGN at frequencies of 22, 43, 86, and 129 GHz in dual polarization mode. Our observations constrain apparent brightness temperatures of jet components and radio cores in our sample to > 10^8.01 K and > 10^9.86 K, respectively. Degrees of linear polarization m_L are relatively low overall: less than 10%. This indicates suppression of polarization by strong turbulence in the jets. We found an exceptionally high degree of polarization in a jet component of BL Lac at 43 GHz, with m_L ~ 40%. Assuming a transverse shock front propagating downstream along the jet, the shock front being almost parallel to the line of sight can explain the high degree of polarization.

• 한국전자파학회논문지
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• 제18권8호
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• pp.943-953
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• 2007

본 논문에서는 Ka-band에서 동작하는 스칼라 급전 혼을 가진 카셋그레인 안테나를 개발하였다. 카셋그레인 안테나의 효과적인 EM 시뮬레이션을 위해 계산된 급전 혼의 근거리장을 표면 등가 이론을 이용하여 카셋그레인의 등가 전원으로 사용하였다. 급전 혼은 $HE_{11}$ 모드로 동작하는 주름 원형 혼 안테나를 사용하였으며, 카셋그레인의 주 부경 각도 및 급전 중심점을 안테나 효율이 최대가 되도록 설계하였다. 제안된 급전 혼 안테나는 33 GHz에서 19 dBi 이득을 보이며, 부엽의 크기는 -25dB 이하, $20^{\circ}$의 반전력 빔 폭을 가졌다. 카셋그레인 안테나는 33GHz에서 41 dBi 이득을 가져 60%의 안테나 효율을 보이며 부엽기 크기는 -20dB 이하, $1.2^{\circ}$의 반전력 빔 폭을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.