• Title/Summary/Keyword: Physical Memory

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Dynamic behavior of smart material embedded wind turbine blade under actuated condition

  • Mani, Yuvaraja;Veeraragu, Jagadeesh;Sangameshwar, S.;Rangaswamy, Rudramoorthy
    • Wind and Structures
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    • v.30 no.2
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    • pp.211-217
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    • 2020
  • Vibrations of a wind turbine blade have a negative impact on its performance and result in failure of the blade, therefore an approach to effectively control vibration in turbine blades are sought by wind industry. The small domestic horizontal axis wind turbine blades induce flap wise (out-of-plane) vibration, due to varying wind speeds. These flap wise vibrations are transferred to the structure, which even causes catastrophic failure of the system. Shape memory alloys which possess physical property of variable stiffness across different phases are embedded into the composite blades for active vibration control. Previously Shape memory alloys have been used as actuators to change their angles and orientations in fighter jet blades but not used for active vibration control for wind turbine blades. In this work a GFRP blade embedded with Shape Memory Alloy (SMA) and tested for its vibrational and material damping characteristics, under martensitic and austenite conditions. The embedment portrays 47% reduction in displacement of blade, with respect to the conventional blade. An analytical model for the actuated smart blade is also proposed, which validates the harmonic response of the smart blade.

OSEK PS Kernel Mechanisms for Reducing Dynamic Memory Usage (동적 메모리 사용 감소를 위한 OSEK OS 커널 구현 메커니즘)

  • Lim, Jin-Tack;Keum, Han-Hong;Park, Ji-Yong;Hong, Seong-Soo
    • Transactions of the Korean Society of Automotive Engineers
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    • v.17 no.3
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    • pp.127-141
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    • 2009
  • While the ever-increasing complexity of automotive software systems can be effectively managed through the adoption of a reliable real-time operating system (RTOS), it may incur additional resource usage to a resultant system. Due to the mass production nature of the automotive industry, reducing physical resources used by automotive software is of the utmost importance for cost reduction. OSEK OS is an automotive real-time kernel standard specifically defined to address this issue. Thus, it is very important to develop and exploit kernel mechanisms such that they can achieve minimal resource usage in the OSEK OS implementation. In this paper, we analyze the task subsystem, resource subsystem, application mode and conformance classes of OSEK OS as well as the OSEK Implementation Language (OIL). Based on our analysis, we in turn devise and implement kernel mechanisms to minimize the dynamic memory usage of the OSEK OS implementation. Finally, we show that our mechanisms effectively reduce the memory usage of OSEK OS and applications.

Confabulation Following Injury of the Papez Circuit as a Result of Middle Cerebral Artery Infarction: A Diffusion Tensor Tractography Study (중대뇌동맥 허혈에 의한 파페츠 회로 손상과 작화증)

  • Yeo, Sang-Seok
    • PNF and Movement
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    • v.14 no.1
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    • pp.41-47
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    • 2016
  • Purpose: In general, confabulation is defined as confusion of reality with past events without apparent prompting, in association with disruption of the capacity for retrieval and encoding of memory. We report on a patient who showed spontaneous confabulation associated with injury of the Papez circuit following middle cerebral artery (MCA) infarction. Methods: A 67-year-old female patient suffered cerebral infarct resulting from spontaneous MCA territory. After onset of the MCA infarct, she showed severe memory impairment and provoked confabulation. The Papez circuit was reconstructed for evaluation of part of it using diffusion tensor tractography (DTT). Fractional anisotropy (FA), mean diffusivity (MD), and tract volume were measured. Results: The right thalamocingulate tract showed a significant decrement of FA value and tract volume, and an increment of MD value by more than two standard deviations of that of normal control subjects. The tract volume in the left fornix and mammillothalamic tract decreased by more than two standard deviations of that of normal control subjects. Conclusion: Injuries of the Papez circuit were demonstrated in a patient who showed severe memory impairment and provoked confabulation following MCA infarct. We believe that analysis of the Papez circuit tract using DTT is useful in elucidating the cause of provoked confabulation in patients with MCA infarct.

The Machining Characteristics of Groove Patterning for Nitinol Shape Memory Alloy Using Electrochemical Machining (전해가공을 이용한 Nitinol 형상기억합금의 그루브 패턴 가공특성에 관한 연구)

  • Shin, Tae-Hee;Kim, Baek-Kyoum;Baek, Seung-Yub;Lee, Eun-Sang
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.18 no.6
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    • pp.551-557
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    • 2009
  • A development of smart materials is becoming a prominent issue on present industries. A smart material, included in functions, is needed for micro fabrication. A shape memory alloy(SMA) in a smart material is best known material. Ni-Ti alloy, composed of nikel and titanium is one of the best shape memory alloy(SMA). Nitinol SMA is used for a lot of high tech industry such as aero space, medical device, micro actuator, sensor system. However, Ni-Ti SMA is difficult to process to make a shape and fabrications as traditional machining process. Because nitinol SMA, that is contained nikel content more than titanium content, has similar physical characteristics of titanium. In this paper, the characteristics of ECM grooving process for nitinol SMA are investigated by experiments. The experiments in this study are progressed for power, gap distance and machining time. The characteristics are found each part. Fine shape in work piece can be found on conditions; current 6A, duty factor 50%, gap distance 15%, gap distance $15{\mu}m$, machining time 10min.

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Language performance analysis based on multi-dimensional verbal short-term memories in patients with conduction aphasia (다차원 구어 단기기억에 따른 전도 실어증 환자의 언어수행력 분석)

  • Ha, Ji-Wan;Hwang, Yu Mi;Pyun, Sung-Bom
    • Korean Journal of Cognitive Science
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    • v.23 no.4
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    • pp.425-455
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    • 2012
  • Multi-dimensional verbal short-term memory mechanisms are largely divided into the phonological channel and the lexical-semantic channel. The former is called phonological short-term memory and the latter is called semantic short-term memory. Phonological short-term memory is further segmented into the phonological input buffer and the phonological output buffer. In this study, the language performance of each of three patients with similar levels of conduction aphasia was analyzed in terms of multi-dimensional verbal short-term memory. To this end, three patients with conduction aphasia were instructed to perform four different aspects of language tasks that are spontaneous speaking, repetition, spontaneous writing, and dictation in both word and sentence level. Moreover, the patients' phonological memories and semantic short-term memories were evaluated using digit span tests and verbal learning tests. As a result, the three subjects exhibited various types of performances and error responses in the four aspects of language tests, and the short-term memory tests also did not produce identical results. The language performance of three patients with conduction aphasia can be explained according to whether the defects occurred in the semantic short-term memory, phonological input buffer and/or phonological output buffer. In this study, the relations between language and multi-dimensional verbal short-term memory were discussed based on the results of language tests and short-term memory tests in patients with conduction aphasia.

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K-means clustering analysis and differential protection policy according to 3D NAND flash memory error rate to improve SSD reliability

  • Son, Seung-Woo;Kim, Jae-Ho
    • Journal of the Korea Society of Computer and Information
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    • v.26 no.11
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    • pp.1-9
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    • 2021
  • 3D-NAND flash memory provides high capacity per unit area by stacking 2D-NAND cells having a planar structure. However, due to the nature of the lamination process, there is a problem that the frequency of error occurrence may vary depending on each layer or physical cell location. This phenomenon becomes more pronounced as the number of write/erase(P/E) operations of the flash memory increases. Most flash-based storage devices such as SSDs use ECC for error correction. Since this method provides a fixed strength of data protection for all flash memory pages, it has limitations in 3D NAND flash memory, where the error rate varies depending on the physical location. Therefore, in this paper, pages and layers with different error rates are classified into clusters through the K-means machine learning algorithm, and differentiated data protection strength is applied to each cluster. We classify pages and layers based on the number of errors measured after endurance test, where the error rate varies significantly for each page and layer, and add parity data to stripes for areas vulnerable to errors to provides differentiate data protection strength. We show the possibility that this differentiated data protection policy can contribute to the improvement of reliability and lifespan of 3D NAND flash memory compared to the protection techniques using RAID-like or ECC alone.

The Motor-cognitive Training on Cognition and Physical Performance in the Older Adults with Mild Cognition Impairment : A Literature Review

  • Jung, Jihye;Kim, Yong-Seong;Lee, Seungwon
    • Physical Therapy Rehabilitation Science
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    • v.10 no.4
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    • pp.493-502
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    • 2021
  • Objective: Older adults with mild cognitive impairment (MCI) are more likely to progress to dementia. Motor-cognitive training is applied as a dual-task to improve the cognitive and physical functions of older adults with MCI. The purpose of the study was to know the recent trends in motor training types and outcome measures used for motor-cognitive training in older adults with MCI. Design: Aliterature review Methods: This literature review was conducted in Pubmed, MEDLINE® and Google Scholar with the following key words: older adults, mild cognitive impairment, motor-cognitive training, cognition, and dual-task. The 7 studies were found with the search tool and all studies were randomized controlled trials. Results: In motor-cognitive training in older adults with MCI, 6 studies applied aerobic exercise. And 3 out of 6 studies also applied strengthening exercises. One study applied dual tasks without aerobic exercise. In the 6 studies, overall cognitive and executive function were used as outcome measures, and physical function was evaluated as gait performance. Memory and physical frailty were also used as measurement tools. As a result of all studies, when motor-cognitive training was applied, cognition and physical performance showed significant results. Conclusions: A recent five-year study applied mainly aerobic exercise and strength training to older adults with MCI and found it to improve cognitive and physical performance.

Transparent Nano-floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) Pyrochlore Thin Films

  • Jeong, Hyeon-Jun;Song, Hyeon-A;Yang, Seung-Dong;Lee, Ga-Won;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.1-20.1
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    • 2011
  • The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

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Design and Evaluation of a Fast Boot-up Technique for Flash Memory based Computer Systems (플래시메모리 기반 컴퓨터시스템을 위한 고속 부팅 기법의 설계 및 성능평가)

  • Yim, Keun-Soo;Kim, Ji-Hong;Koh, Kern
    • Journal of KIISE:Computer Systems and Theory
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    • v.32 no.11_12
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    • pp.587-597
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    • 2005
  • Flash memory based embedded computing systems are becoming increasingly prevalent.These systems typically have to provide an instant start-up time. However, we observe that mounting a file system toy flash memory takes 1 to 25 seconds mainly depending on the flash capacity. Since the flash chip capacity is doubled in every year, this mounting time will soon become the most dominant reason of the delay of system start-up time Therefore, in this paper, we present instant mounting techniques for flash file systems by storing the In-memory file system metadata to flash memory when unmounting the file system and reloading the stored metadata quickly when mounting the file system. These metadata snapshot techniques are specifically developed for NOR- and NAND-type flash memories, while at the same time, overcoming their physical constraints. The proposed techniques check the validity of the stored snapshot and use the proposed fast trash recovery techniques when the snapshot is Invalid. Based on the experimental results, the proposed techniques can reduce the flash mounting time by about two orders of magnitude over the existing de facto standard flash file system, JFFS2.

Effects of the Frequency Band Pass Filter on the P300 Event-related Potential in the Working Memory (주파수 통과대역필터가 작업 기억 관련 사건관련전위 P300에 미치는 영향)

  • Park, Woongsik;Lee, Jeongwoo
    • Journal of The Korean Society of Integrative Medicine
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    • v.8 no.2
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    • pp.131-138
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    • 2020
  • Purpose : The purpose of this study was to investigate the effects of the frequency band pass filter on the P300 event-related potential in the working memory. Methods : The subjects were 20 women in their 20s who applied for participation in the experiment. Event-related potentials (ERPs) were elicited using 3-back tasks for the working memory, and were recorded from Fz, Cz, and Pz scalp electrodes. The high-pass filters were set to 0.01, 0.1, and 0.3 Hz for analysis purposes, and the low-pass filters were set to 30 and 15 Hz. The 3-back task was presented for a total of 100 times, among which 30 times were designated for the target stimulation (a matched number) and 70 times for the non-target stimulation (an unmatched number). The temporal interval between each stimulation was set at 1 second, while each time duration was randomly presented between 2 to 4 seconds. ERP were analyzed for the P300 recorded from Fz, Pz and Cz scalp electrodes. Results : Latency and amplitude had no significant interaction effects in both the high- and low-pass filters. For the main effects, the latency and amplitude of the P300 event-related potential had no significant difference in the high-pass filters, but the latency had a significant difference in the low-pass filter of Fz, and the amplitude had a significant difference in the low-pass filter of Pz. Conclusion : The results of this study showed that the less than 0.3 Hz high filters had no effects on the differences between the latency and amplitude of the P300 event-related potential in the working memory. The 30Hz low-pass filter, however, was found to be useful for recording the P300 event-related potential in the working memory.